Vishay 8ETX06-1PbF User Manual
8ETX06SPbF/8ETX06-1PbF
Hyperfast Rectifier,
8 A FRED Pt
TM
Vishay High Power Products
8ETX06SPbF
8ETX06-1PbF
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
Base
cathode
2
2
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION/APPLICATIONS
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
trr (typical) 15 ns
I
F(AV)
V
R
N/C
1
TO-262
600 V
3
Anode
8 A
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
RRM
F(AV)
FSM
FM
, T
J
TC = 143 °C 8
TJ = 25 °C 110
Stg
600 V
ANon-repetitive peak surge current I
18
- 65 to 175 °C
Available
RoHS*
COMPLIANT
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94033 For technical questions, contact: diodes-tech@vishay.com
Revision: 21-May-08 1
V
,
BR
V
R
IR = 100 µA 600 - -
R
IF = 8 A - 2.3 3.0
F
T
S
= 8 A, TJ = 150 °C - 1.4 1.7
I
F
VR = VR rated - 0.3 50
T
= 150 °C, VR = VR rated - 35 500
J
VR = 600 V - 17 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
µA
www.vishay.com
8ETX06SPbF/8ETX06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V - 15 19
= 8 A, dIF/dt = 100 A/µs, VR = 30 V - 16 24
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 40 -
T
J
TJ = 25 °C - 2.3 -
T
= 125 °C - 4.5 -
J
= 8 A
I
F
dI
/dt = 200 A/µs
F
V
= 390 V
R
-17-
TJ = 25 °C - 20 -
T
= 125 °C - 100 -
J
-31-ns
-12- A
- 195 - nC
TJ = 125 °C
= 8 A
I
F
dI
/dt = 600 A/µs
F
V
= 390 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
R
-1.42
thJC
Typical socket mount - - 70
R
thJA
Mounting surface, flat, smooth and
R
thCS
greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 8ETX06S
-
Case style TO-262 8ETX06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94033
2 Revision: 21-May-08
8ETX06SPbF/8ETX06-1PbF
100
10
Current (A)
1
- Instantaneous Forward
F
I
0.1
0.5 1.5 3.0
V
- Forward Voltage Drop (V)
F
2.5
TJ = 175 °C
T
= 150 °C
J
= 25 °C
T
J
3.52.01.00
Hyperfast Rectifier,
8 A FRED Pt
4.0 4.5
TM
- Reverse Current (mA)
I
R
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0.0001
TJ = 175 °C
T
= 150 °C
J
T
= 125 °C
J
T
100 300 6004002000
VR - Reverse Voltage (V)
= 100 °C
J
= 25 °C
T
J
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
500
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
100 300 6004002000 500
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
1
Document Number: 94033 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 21-May-08 3
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