Vishay 8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP Data Sheet

Bulletin PD-20698 rev. B 02/04
e
Anode
1
3
2
N/C
8ETL06
8ETL06S
8ETL06-1
8ETL06FP
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC
Features
• Benchmark Ultra-low Forward Voltage Drop
• Hyperfast Recovery Time
• 175°C Operating Junction Temperature
• Fully Isolated package (V
• UL E78996 approved
= 2500 V
INS
RMS
)
Description
State of the art, ultra-low VF, soft-switching Hyperfast Rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimised conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
Applications
AC-DC SMPS 70W-400W e.g. Laptop & Printer AC Adaptors, Desktop PC, TV & Monitor, Games units and DVD AC-DC power supplies.
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
I
FM
TJ, T
Peak Repetitive Reverse Voltage 600 V
Average Rectified Forward Current @ TC = 160°C 8 A
@ TC = 142°C (FULLPACK)
Non Repetitive Peak Surge Current @ TJ = 25°C 175
Peak Repetitive Forward Current 16
Operating Junction and Storage Temperatures - 65 t o 175 °C
STG
VF = 0.96V typ.
I
= 8Amp
F(AV)
VR = 600V
Case Styles
8ETL06
Base
Cathode
1
Cathode
TO-220AC
2
3
Anode
8ETL06S
Base
Cathode
1
N/C
D2PAK
8ETL06-1
2
3
Anod
TO-262
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8ETL06FP
Cathode
1
3
Anode
TO-220 FULLPACK
1
8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
Electrical Characteristics @ T
Parameters Min Typ Max Test Conditions
= 25°C (unless otherwise specified)
J
Units
VBR, VrBreakdown Voltage, 600 - - V IR = 100µA
Blocking Voltage
V
F
Forward Voltage - 0.96 1.05 V IF = 8A, TJ = 25°C
- 0.81 0.86 V IF = 8A, TJ = 150°C
I
R
Reverse Leakage Current - 0.05 5 µA VR = VR Rated
- 20 100 µA TJ = 150°C, VR = VR Rated
C
T
L
S
Junction Capacitance - 17 - pF VR = 600V
Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
t
rr
I
RRM
Q
Parameters Min Typ Max Test Conditions
Reverse Recovery Time - 60 100 ns IF = 1A, diF/dt = 100A/µs, VR = 30V
- 150 250 IF = 8A, diF/dt = 100A/µs, VR = 30V
- 170 - TJ = 25°C
- 250 - TJ = 125°C
Peak Recovery Current - 15 - A TJ = 25°C
-20- TJ = 125°C
rr
Reverse Recovery Charge - 1.3 - µC TJ = 25°C
- 2.6 - TJ = 125°C
Units
I
= 8A
F
diF /dt = 200A/µs
VR = 390V
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Typical Socket MountMounting Surface, Flat, Smooth and Greased
2
Max. Junction Temperature Range - - 175 °C
Max. Storage Temperature Range - 65 - 175
Thermal Resistance, Junction to Case Per Leg - 1.4 2 °C/W
Fullpack (Per Leg) - 3.4 4.3
Thermal Resistance, Junction to Ambient Per Leg - - 70
Thermal Resistance, Case to Heatsink - 0.5 -
Weight - 2.0 - g
Mounting Torque 6.0 - 12 Kg-cm
- 0.07 - (oz)
5.0 - 10 lbf.in
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8ETL06, 8ETL06S, 8ETL06-1, 8ETL06FP
Bulletin PD-20698 rev. B 02/04
100
10
(A)
F
1
Instantaneous Forward Current - I
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
100
Tj = 175˚C
150˚C
(µA)
R
10
1
125˚C
100˚C
75˚C
0.1
0.01
Reverse Current - I
0.001 100 200 300 400 500 600
50˚C
25˚C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
100
T = 25˚C
J
( p F )
T
0.1
0.4 0.8 1.2 1.6 2
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
(°C/W)
thJC
1
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
0.1
Single Pulse
(Thermal Resistance)
Thermal Impedance Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
2
3
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