Vishay 80RIA...PbF Series, 81RIA...PbF Series Data Sheet

TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 80 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• RoHS compliant

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

80 A

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 1900

60 Hz 1990

50 Hz 18

60 Hz 16

Typical 110 µs

80 A

85 °C

125

400 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

80RIA
81RIA

V

VOLTAGE

CODE

40 400 500

80 800 900

120 1200 1300

DRM/VRRM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= 125 °C

J

mA

15

Document Number: 94392 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 80 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 180.5 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 75 °C case temperature 125

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 1990

t = 10 ms

t = 8.3 ms 1675

t = 10 ms

t = 8.3 ms 16

t = 10 ms

t = 8.3 ms 11.7

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.13

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.84

T(AV)

), TJ = TJ maximum 0.99

T(AV)

), TJ = TJ maximum 2.29

T(AV)

80 A

85 °C

1900

1600

18

12.7

200

400

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

= 125 °C, Vd = Rated V

T

J

0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t
Per JEDEC standard RS-397, 5.2.2.6.

Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs,
V

= Rated V

d

, ITM = 50 Adc, TJ = 25 °C

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t

, ITM = 2 x dI/dt snubber

DRM

= 6 µs, tr = 0.5 µs

p

= 500 µs

p

300 A/µs

1

µs

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= 125 °C exponential to 67 % rated V

J

TJ = 125 °C rated V

DRM/VRRM

applied 15 mA

DRM

500 V/µs

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Document Number: 94392

2 Revision: 11-Aug-08

80RIA...PbF/81RIA...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 80 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 12

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

= 25 °C 120

J

T

= 125 °C 60

J

TJ = - 40 °C 3.5

= 25 °C 2.5

T

J

T

= 125 °C 1.5

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

W

3A

20

10

V

270

mAT

V

6mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque, ± 10 %

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.042 0.030

120° 0.050 0.052

90° 0.064 0.070

60° 0.095 0.100

30° 0.164 0.165

Note

• The table above shows the increment of thermal resistance R

T

J

Stg

R

thJC

R

thCS

DC operation 0.30

Mounting surface, smooth, flat and greased 0.1

Non-lubricated threads

Lubricated threads

T

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

15.5

(137)

14

(lbf · in)

(120)

= TJ maximum K/W

J

°C

K/W

N · m

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Revision: 11-Aug-08 3

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 102030405060708090

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

80RIA Series
R (DC) = 0.30 K/W

thJC

Cond uctio n Angle

30°

60°

90°

120°

180°

Average On-state Current (A)

120

110

100

90

80

70

60

180°
120°

90°
60°
30°

RM S Li m it

50

40

30

20

10

0

Ma ximum Ave rage On-state Powe r Loss (W)

0

10 20 30 40 50 60 70 80

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 80 A

130

120

110

100

90

80

70

Maximum Allowa ble Case Temp erature (°C)

R

0

.

t

6

h

S

K

A

/

W

=

0

.

4K

/

1

K

/

W

1

.

4

K

/

W

2

K

/

W

Conduction Angle

80RIA Serie s
T = 125°C

J

3

K

/

W

5

K

/

W

0255075100125

Maximum Allow ab le Am bient Tempera ture (°C)

Fig. 3 - On-State Power Loss Characteristics

W

80RIA Serie s
R (DC) = 0.30 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

DC

020406080100120140

Average On-state Current (A)

­D

e

l

t

a

R

180

160

140

120

100

80

60

40

20

0

Maximum Average On-state Power Lo ss (W)

DC
180°
120°

90°

60°

30°

1

1

RM S Li m i t

Conduction Period

80RIA Serie s
T = 125°C

J

0 20406080100120140

Average On-state Current (A)

.

2

3

5

0255075100125

Maximum Allow ab le Am bient Temperat ure (°C)

R

t

h

S

A

=

0

.

4

K

0

/

.

W

6

K

-

/

W

D

e

l

t

a

K

/

W

4

K

/

W

K

/

W

K

/

W

K

/

W

R

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94392

4 Revision: 11-Aug-08

80RIA...PbF/81RIA...PbF Series

Phase Control Thyristors

(Stud Version), 80 A

1800

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

1600

1400

1200

1000

80RIA Se rie s

Peak Half Sine Wave On-stat e Current (A)

800

110100

Numbe r Of Eq ua l Am plitud e Ha lf Cycle Current Pulse s (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Initial TJ = 125°C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

10000

1000

Vishay High Power Products

2000

Maximum Non Repetitive Surge Current

1900

1800

1700

1600

1500

1400

1300

1200

1100

1000

900

800

Pea k Half Sine Wave On-state Current (A)

700

Fig. 6 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

80RIA Serie s

0.01 0.1 1

Pulse Tra in Du ra t io n ( s)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

J

RRM

100

T = 25°C

J

T = 125°C

10

Instantaneous On-state Current (A)

1

0.511.522.533.544.55

In st a nt a n e o us O n- st a t e Vo lt a g e ( V)

J

80RIA Series

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady State Value

R = 0.30 K/W

thJC

(DC Operation)

thJC

0.1

0.01

80RIA Series

0.001

Transient Thermal Impedance Z (K/ W)

0.0001 0.001 0.01 0.1 1 10

Sq uare Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94392 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

80RIA...PbF/81RIA...PbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

ORDERING INFORMATION TABLE

Device code

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

8 0 RIA 120 M PbF

Phase Control Thyristors

(Stud Version), 80 A

(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms

Tj=-40 °C

Tj=25 °C

Tj=125 °C

(a)

(b)

Device: 80RIA Series

Instan taneous Ga te Current (A)

Fig. 9 - Gate Characteristics

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

51324

6

1 -I

TAV

x 10 A

2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

3 - RIA = Essential part number

- Voltage code x 100 = V

4

-

5

None = Stud base 1/2"-20UNF- 2 A threads

(see Voltage Ratings table)

RRM

M = Stud base metric threads M12 x 1.75 E 6

6

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95003

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6 Revision: 11-Aug-08

Document Number: 94392

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

TO-209AC (TO-94) for 80RIA and 81RIA Series

DIMENSIONS in millimeters (inches)

Glass metal seal

16.5 (0.65) MAX.

Outline Dimensions

Vishay High Power Products

2.5 (0.10) MAX.

157 (6.18)

170 (6.69)

55 (2.17)

MIN.

24 (0.94)

MAX.

Ø 8.5 (0.33)

Red silicon rubber

Red cathode

Red shrink

10.0 (0.39) MAX.

21 (0.83)

MAX.

1/2"-20UNF-2A

29.5 (1.16) MAX.

Ø 4.3 (0.17)

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

Ø 23.5 (0.92) MAX.

SW 27

2

(8.46 ± 0.39)

215 ± 10

Flexible lead

C.S. 16 mm

(0.025 s.i.)

Fast-on terminals

AMP. 280000-1

9.5 (0.37) MIN.

20 (0.79) MIN.

2

REF-250

Document Number: 95362 For technical questions concerning discrete products, contact: [e-mail]
Revision: 25-Sep-08 For technical questions concerning module products, contact: [e-mail]

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1