Vishay 80RIA...PbF Series, 81RIA...PbF Series Data Sheet

TO-209AC (TO-94)
PRODUCT SUMMARY
I
T(AV)
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AC (TO-94)
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
80 A
• AC controllers
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
t
I
V
DRM/VRRM
t
T
J
T
C
50 Hz 1900
60 Hz 1990
50 Hz 18
60 Hz 16
Typical 110 µs
80 A
85 °C
125
400 to 1200 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
80RIA 81RIA
V
VOLTAGE
CODE
40 400 500
80 800 900
120 1200 1300
DRM/VRRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= 125 °C
mA
15
Document Number: 94392 For technical questions, contact: ind-modules@vishay.com Revision: 11-Aug-08 1
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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle non-repetitive surge current
Maximum I
Maximum I
t for fusing I2t
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 180.5 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
DC at 75 °C case temperature 125
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
t = 10 ms
t = 8.3 ms 1990
t = 10 ms
t = 8.3 ms 1675
t = 10 ms
t = 8.3 ms 16
t = 10 ms
t = 8.3 ms 11.7
(16.7 % x π x I (I > π x I (16.7 % x π x I (I > π x I
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage reapplied
100 % V reapplied
No voltage
RRM
Sinusoidal half wave, initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.13
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.84
T(AV)
), TJ = TJ maximum 0.99
T(AV)
), TJ = TJ maximum 2.29
T(AV)
80 A
85 °C
1900
1600
18
12.7
200
400
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
= 125 °C, Vd = Rated V
T
J
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, t Per JEDEC standard RS-397, 5.2.2.6.
Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs, V
= Rated V
, ITM = 50 Adc, TJ = 25 °C
DRM
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, t
, ITM = 2 x dI/dt snubber
DRM
= 6 µs, tr = 0.5 µs
= 500 µs
300 A/µs
1
µs
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= 125 °C exponential to 67 % rated V
J
TJ = 125 °C rated V
DRM/VRRM
applied 15 mA
DRM
500 V/µs
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Document Number: 94392
2 Revision: 11-Aug-08
80RIA...PbF/81RIA...PbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 80 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GT
GT
GD
GD
TJ = TJ maximum, tp 5 ms 12
TJ = TJ maximum, f = 50 Hz, d% = 50 3
TJ = TJ maximum, tp 5 ms
GM
GM
TJ = - 40 °C
= 25 °C 120
J
T
= 125 °C 60
J
TJ = - 40 °C 3.5
= 25 °C 2.5
T
J
T
= 125 °C 1.5
J
Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied
Maximum gate current/voltage not to trigger is the maximum value
TJ = TJ maximum
which will not trigger any unit with rated V
anode to cathode
DRM
applied
W
3A
20
10
V
270
mAT
V
6mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.042 0.030
120° 0.050 0.052
90° 0.064 0.070
60° 0.095 0.100
30° 0.164 0.165
Note
• The table above shows the increment of thermal resistance R
T
J
Stg
R
thJC
R
thCS
DC operation 0.30
Mounting surface, smooth, flat and greased 0.1
Non-lubricated threads
Lubricated threads
T
when devices operate at different conduction angles than DC
thJC
- 40 to 125
- 40 to 150
15.5
(137)
14
(lbf · in)
(120)
= TJ maximum K/W
J
°C
K/W
N · m
Document Number: 94392 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 3
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
0 102030405060708090
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80RIA Series R (DC) = 0.30 K/W
thJC
Cond uctio n Angle
30°
60°
90°
120°
180°
Average On-state Current (A)
120
110
100
90
80
70
60
180° 120°
90° 60° 30°
RM S Li m it
50
40
30
20
10
0
Ma ximum Ave rage On-state Powe r Loss (W)
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Phase Control Thyristors
(Stud Version), 80 A
130
120
110
100
90
80
70
Maximum Allowa ble Case Temp erature (°C)
R
0
.
t
6
h
S
K
A
/
W
=
0
.
4K
/
1
K
/
W
1
.
4
K
/
W
2
K
/
W
Conduction Angle
80RIA Serie s T = 125°C
J
3
K
/
W
5
K
/
W
0255075100125
Maximum Allow ab le Am bient Tempera ture (°C)
Fig. 3 - On-State Power Loss Characteristics
W
80RIA Serie s R (DC) = 0.30 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
DC
020406080100120140
Average On-state Current (A)
­D
e
l
t
a
R
180
160
140
120
100
80
60
40
20
0
Maximum Average On-state Power Lo ss (W)
DC 180° 120°
90°
60°
30°
1
1
RM S Li m i t
Conduction Period
80RIA Serie s T = 125°C
J
0 20406080100120140
Average On-state Current (A)
.
2
3
5
0255075100125
Maximum Allow ab le Am bient Temperat ure (°C)
R
t
h
S
A
=
0
.
4
K
0
/
.
W
6
K
-
/
W
D
e
l
t
a
K
/
W
4
K
/
W
K
/
W
K
/
W
K
/
W
R
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94392
4 Revision: 11-Aug-08
80RIA...PbF/81RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
1800
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1600
1400
1200
1000
80RIA Se rie s
Peak Half Sine Wave On-stat e Current (A)
800
110100
Numbe r Of Eq ua l Am plitud e Ha lf Cycle Current Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
10000
1000
Vishay High Power Products
2000
Maximum Non Repetitive Surge Current
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
Pea k Half Sine Wave On-state Current (A)
700
Fig. 6 - Maximum Non-Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
80RIA Serie s
0.01 0.1 1
Pulse Tra in Du ra t io n ( s)
Initial T = 125°C
No Voltage Reapplied Rated V Reapplied
J
RRM
100
T = 25°C
J
T = 125°C
10
Instantaneous On-state Current (A)
1
0.511.522.533.544.55
In st a nt a n e o us O n- st a t e Vo lt a g e ( V)
J
80RIA Series
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R = 0.30 K/W
thJC
(DC Operation)
thJC
0.1
0.01
80RIA Series
0.001
Transient Thermal Impedance Z (K/ W)
0.0001 0.001 0.01 0.1 1 10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
Document Number: 94392 For technical questions, contact: ind-modules@vishay.com
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Revision: 11-Aug-08 5
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
100
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : 20V, 65ohms
10
tr<=1 µs
1
Instantaneous Gate Voltage (V)
ORDERING INFORMATION TABLE
Device code
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
8 0 RIA 120 M PbF
Phase Control Thyristors
(Stud Version), 80 A
(1) PGM = 100W, tp = 500µs (2) PGM = 50W, tp = 1ms (3) PGM = 20W, tp = 2.5ms (4) PGM = 10W, tp = 5ms
Tj=-40 °C
Tj=25 °C
Tj=125 °C
(a)
(b)
Device: 80RIA Series
Instan taneous Ga te Current (A)
Fig. 9 - Gate Characteristics
(1) (2)
Frequency Limited by PG(AV)
(3)
(4)
51324
6
1 -I
TAV
x 10 A
2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 - RIA = Essential part number
- Voltage code x 100 = V
4
-
5
None = Stud base 1/2"-20UNF- 2 A threads
(see Voltage Ratings table)
RRM
M = Stud base metric threads M12 x 1.75 E 6
6
- Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95003
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Document Number: 94392
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
TO-209AC (TO-94) for 80RIA and 81RIA Series
DIMENSIONS in millimeters (inches)
Glass metal seal
16.5 (0.65) MAX.
Outline Dimensions
Vishay High Power Products
2.5 (0.10) MAX.
157 (6.18)
170 (6.69)
55 (2.17)
MIN.
24 (0.94)
MAX.
Ø 8.5 (0.33)
Red silicon rubber
Red cathode
Red shrink
10.0 (0.39) MAX.
21 (0.83)
MAX.
1/2"-20UNF-2A
29.5 (1.16) MAX.
Ø 4.3 (0.17)
C.S. 0.4 mm
(0.0006 s.i.)
White gate
White shrink
Ø 23.5 (0.92) MAX.
SW 27
2
(8.46 ± 0.39)
215 ± 10
Flexible lead
C.S. 16 mm
(0.025 s.i.)
Fast-on terminals
AMP. 280000-1
9.5 (0.37) MIN.
20 (0.79) MIN.
2
REF-250
Document Number: 95362 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 25-Sep-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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