Fast Soft Recovery
Rectifier Diode, 80 A
FEATURES/DESCRIPTION
Base
common
cathode
2, 4
The 80EPF.. fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
80EPF.. Soft Recovery Series
Vishay High Power Products
TO-2 47 AC
Anode
1
Anode
3
This product series has been designed and qualified for
industrial level.
APPLICATIONS
PRODUCT SUMMARY
VF at 40 A < 1.2 V
t
rr
V
RRM
90 ns
1000/1200 V
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL TEST CONDITIONS VALUES UNITS
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
Sinusoidal waveform 80
1 A, - 100 A/µs 90 ns
40 A, TJ = 25 °C 1.2 V
1000/1200 V
1100
- 40 to 150 °C
A
VOLTAGE RATINGS
V
, MAXIMUM PEAK
PART NUMBER
80EPF10 1000 1100
80EPF12 1200 1300
RRM
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
12
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
Document Number: 93157 For technical questions, contact: diodes-tech@vishay.com
Revision: 13-Jun-08 1
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 70 000 A 2√ s
F(AV)
I
FSM
TC = 92 °C, 180° conduction half sine wave 80
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1250
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 7000
applied 1100
RRM
applied 5000
RRM
A
2
A
s
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80EPF.. Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC)
T
, T
J
R
thJC
R
thJA
R
thCS
80 A, TJ = 25 °C 1.35 V
t
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 12
J
IF at 80 Apk
25 A/µs
25 °C
V
= Rated V
R
RRM
480 ns
7.1 A
2.1 µC
4.03 mΩ
0.87 V
0.1
- 40 to 150 °C
DC operation 0.35
40
Mounting surface, smooth and greased 0.2
0.21 oz.
I
FM
t
rr
dir
dt
I
RM(REC)
6g
kgf · cm
(lbf · in)
80EPF10
80EPF12
mA
°C/W
t
Q
rr
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Document Number: 93157
2 Revision: 13-Jun-08
80EPF.. Soft Recovery Series
150
140
130
120
110
100
Temperature (°C)
Maximum Allowable Case
Maximum Allowable Case
90
8 0
0
150
140
130
120
110
100
Temperature (°C)
90
8 0
0
Fast Soft Recovery
Rectifier Diode, 80 A
8 0EPF.. Series
(DC) = 0.35 °C/W
R
thJC
Ø
Condu ction angle
60°
30°
10 40
30
20
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
60°
30°
20 40 60 8 0 100 120 140
90°
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
90°
120°
50 60 70 8 090
8 0EPF.. Series
(DC) = 0.35 °C/W
R
thJC
Ø
Condu ction period
120°
18 0°
18 0°
DC
140
120
100
8 0
60
Power Loss (W)
40
Maximum Average Forward
20
1200
1100
1000
900
8 00
700
600
Forward Current (A)
Peak Half Sine Wave
500
400
300
Fig. 5 - Maximum Non-Repetitive Surge Current
Vishay High Power Products
18 0°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
8 0EPF.. Series
= 150 °C
T
J
0
0
Fig. 4 - Forward Power Loss Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
20 30 50 70 90 10 40 60 80
Average Forward Current (A)
At any rated load condition and w ith
rated V
8 0EPF.. Series
applied follow ing su rge.
RRM
Initial TJ = 150 °C
at 60 Hz 0.008 3 s
at 50 Hz 0.0100 s
Current Pulses (N)
200
175
150
125
100
75
Power Loss (W)
50
Maximum Average Forward
25
DC
18 0°
120°
90°
60°
30°
RMS limit
Ø
Condu ction period
8 0EPF.. Series
= 150 °C
T
J
0
0
20
60 8 0 100 120 140
40
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1300
1200
1100
1000
900
8 00
700
600
Forward Current (A)
Peak Half Sine Wave
500
400
300
0.01 0.1 1
Maximu m non-repetitiv e su rge cu rrent
v ersu s pu lse train du ration.
Initial TJ = 150 °C
N o v oltage reapplied
Rated V
8 0EPF.. Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
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Revision: 13-Jun-08 3
80EPF.. Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
8 00
700
600
- Maximum Reverse
rr
t
Recovery Time (ns)
500
400
300
200
100
0
04 080 120 160 200
IFM = 8 0 A
IFM = 20 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
8 0EPF.. Series
T
J
IFM = 10 A
Fast Soft Recovery
Rectifier Diode, 80 A
TJ = 25 °C
= 150 °C
T
J
8 0EPF.. Series
0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
12 000
= 25 °C
IFM = 40 A
= 25 °C
J
10 000
8 000
6000
4000
- Maximum Reverse
rr
Recovery Charge (nC)
Q
2000
Fig. 10 - Recovery Charge Characteristics, T
8 0EPF.. Series
= 25 °C
T
J
0
04 0
8 0 120 160 200
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
= 25 °C
J
18 00
1600
1400
1200
1000
8 00
600
- Maximum Reverse
Recovery Time (ns)
400
rr
t
200
0
04 080 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
8 0EPF.. Series
= 150 °C
T
J
IFM = 8 0 A
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 150 °C
J
25 000
8 0EPF.. Series
= 150 °C
T
J
0
04 080 120 160 200
- Maximum Reverse
rr
Q
20 000
15 000
10 000
Recovery Charge (nC)
5000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
= 150 °C
J
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Document Number: 93157
4 Revision: 13-Jun-08
80EPF.. Soft Recovery Series
Fast Soft Recovery
Vishay High Power Products
Rectifier Diode, 80 A
45
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
- Maximum Reverse
Recovery Current (A)
rr
I
8 0EPF.. Series
40
T
= 25 °C
J
35
30
25
20
15
10
5
0
04 080 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
60
50
40
30
20
- Maximum Reverse
Recovery Current (A)
rr
I
10
0
8 0EPF.. Series
= 150 °C
T
J
04 0
8 0 120 160 200
IFM = 8 0 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
0.1
0.01
0.001
- Transient Thermal Impedance (°C/W)
thJC
Z
Single pu lse
Fig. 14 - Thermal Impedance Z
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
Steady state v alu e
(DC operation)
8 0EPF.. Series
10 0.0001 0.001 0.01 0.1 1
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Revision: 13-Jun-08 5
80EPF.. Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
80 E P F 12 -
1
2
3
4 - Type of silicon:
5 - Voltage code x 100 = V
6
Fast Soft Recovery
Rectifier Diode, 80 A
5 13 24
- Current rating (80 = 80 A)
- Circuit configuration:
E = Single diode
- Package:
P = TO-247AC
F = Fast recovery
RRM
- None = Standard production
PbF = Lead (Pb)-free
6
10 = 1000 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
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6 Revision: 13-Jun-08
Document Number: 93157
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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therein, which apply to these products.
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Revision: 18-Jul-08 1