Vishay 80EPF..PbF Soft Recovery Series Data Sheet

80EPF..PbF Soft Recovery Series

Fast Soft Recovery

Rectifier Diode, 80 A

FEATURES/DESCRIPTION

Base

common

cathode

2, 4

The 80EPF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse

recovery time and low forward voltage drop.

The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.

Vishay High Power Products

Pb-free

Available

RoHS*

COMPLIANT

TO-2 47AC

Anode

1

Anode

3

This product series has been designed and qualified for
Industrial level and lead (Pb)-free.

APPLICATIONS

PRODUCT SUMMARY

VF at 40 A < 1.1 V

t

rr

V

RRM

70 ns

200 to 600 V

• Output rectification and freewheeling in inverters,
choppers and converters

• Input rectifications where severe restrictions on conducted
EMI should be met

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

RRM

I

F(AV)

I

FSM

t

rr

V

F

T

J

Sinusoidal waveform 80

1 A, - 100 A/µs 70 ns

40 A, TJ = 25 °C 1.1 V

Range - 40 to 150 °C

200 to 600 V

1000

A

VOLTAGE RATINGS

, MAXIMUM PEAK REVERSE

V

PART NUMBER

RRM

80EPF02PbF 200 300

80EPF06PbF 600 700

VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1780EPF04PbF 400 500

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94106 For technical questions, contact: [e-mail]
Revision: 05-Jun-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 51 000 A2√s

F(AV)

I

FSM

TC = 95 °C, 180° conduction half sine wave 80

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1000

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 5100

applied 850

RRM

applied 3610

RRM

A

2

A

s

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80EPF..PbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 80 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

FM

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

rr

rr

Reverse recovery charge Q

Snap factor S 0.5

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC

T

, T

J

R

thJC

R

thJA

R

thCS

80 A, TJ = 25 °C 1.25 V

t

rr

Stg

TJ = 125 °C

TJ = 25 °C

T

= 150 °C 17

J

IF at 40 Apk

25 A/µs
25 °C

V

= Rated V

R

RRM

190 ns

3.4 A

0.5 µC

0.85 V

- 40 to 150 °C

DC operation 0.35

40

Mounting surface, smooth and greased 0.2

0.21 oz.

3.5 mΩ

0.1

I

FM

t

rr

di
dt

I

RM(REC)

6g

kgf · cm
(Ibf · in)

80EPF02

80EPF04

80EPF06

mA

Q

°C/W

t

rr

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Document Number: 94106

2 Revision: 05-Jun-08

80EPF..PbF Soft Recovery Series

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

80

0

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

060

Fast Soft Recovery

Rectifier Diode, 80 A

80EPF.. Series

(DC) = 0.35 K/W

R

thJC

Ø

Conduction angle

30°

60°

30

109020 90

40

50

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

80EPF.. Series

(DC) = 0.35 K/W

R

thJC

30°

60°

90°

120°

20 40

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

120°

90°

180°

70

Ø

Conduction period

100

DC

12080

180°

8060

140

Vishay High Power Products

180

160

140

120

100

80

60

Power Loss (W)

40

Maximum Average Forward

20

0

1000

900

800

700

600

500

400

Forward Current (A)

Peak Half Sine Wave

300

200

DC
180°
120°
90°
60°
30°

Conduction period

20 60

0

40

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

80EPF.. Series

1 10 100

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RMS limit

Ø

80EPF.. Series

= 150 °C

T

J

100

12080

140

140

120

100

80

60

Power Loss (W)

40

20

Maximum Average Forward

0

0

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

80EPF.. Series

= 150 °C

T

J

20 3010

50

40 70

60

80

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

90

1000

900

800

700

600

500

400

Forward Current (A)

Peak Half Sine Wave

300

200

0.01 0.1

Maximum non-repetitive surge current
versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

80EPF.. Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

RRM

reapplied

1

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Revision: 05-Jun-08 3

80EPF..PbF Soft Recovery Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

0.22

0.20

0.18

0.16

= 25 °C

J

IFM = 10 A

- Maximum Reverse

rr

t

0.14

0.12

0.10

Recovery Time (µs)

0.08

80EPF.. Series

0.06
T

0.04

0 40 120 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

IFM = 125 A

IFM = 40 A

IFM = 1 A

80

Fast Soft Recovery

Rectifier Diode, 80 A

TJ = 25 °C

= 150 °C

T

J

80EPF.. Series

0 1.5 3.0

Fig. 7 - Forward Voltage Drop Characteristics

IFM = 20 A

160

1.0 2.0 3.5

0.5 2.5 4.0

Instantaneous Forward Voltage (V)

IFM = 80 A

- Maximum Reverse

rr

Recovery Charge (µC)

Q

= 25 °C

J

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

0 80 120 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

80EPF.. Series

= 25 °C

T

J

IFM = 40 A

IFM = 80 A

IFM = 20 A

IFM = 125 A

IFM = 10 A

IFM = 1 A

16040

J

= 25 °C

0.6

0.5

0.4

IFM = 40 A

- Maximum Reverse

rr

t

0.3

0.2

Recovery Time (µs)

0.1
80EPF.. Series

T

= 150 °C

J

0

40

0 80 120 160 200

IFM = 20 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

IFM = 80 A

IFM = 10 A

IFM = 1 A

J

= 150 °C

14

80EPF.. Series

= 150 °C

T

J

40

0 80 120 160 200

- Maximum Reverse

rr

Q

12

10

8

6

4

Recovery Charge (µC)

2

0

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

IFM = 80 A

IFM = 40 A

IFM = 20 A

IFM = 10 A

IFM = 1 A

= 150 °C

J

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Document Number: 94106

4 Revision: 05-Jun-08

80EPF..PbF Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 80 A

22

20

18

16

14

12

10

8

6

- Maximum Reverse
Recovery Current (A)

rr

I

4

2

0

80EPF.. Series

= 25 °C

T

J

IFM = 40 A

40

0 80 120 160 200

IFM = 125 A

IFM = 80 A

IFM = 20 A

IFM = 10 A

IFM = 1 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

1

45

80EPF.. Series

40

35

30

25

20

15

- Maximum Reverse

10

Recovery Current (A)

rr

I

= 150 °C

T

J

IFM = 80 A

= 40 A

I

FM

= 20 A

I

FM

= 10 A

I

FM

= 1 A

I

FM

5

0

0 40 120 160 200

80

dI/dt - Rate of Fall of Forward Current (A/µs)

Steady state value

(DC operation)

0.1

Single pulse

0.01

- Transient Thermal Impedance (K/W)

0.0001 0.001 0.01 0.1

thJC

Z

Square Wave Pulse Duration (s)

Fig. 14 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Characteristics

thJC

1

80EPF.. Series

10

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Revision: 05-Jun-08 5

80EPF..PbF Soft Recovery Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

80 E P F 06 PbF

1 - Current rating (80 = 80 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

6 - None = Standard production

Fast Soft Recovery

Rectifier Diode, 80 A

51324

E = Single diode

P = TO-247AC

F = Fast diode

RRM

PbF = Lead (Pb)-free

6

02 = 200 V
04 = 400 V
06 = 600 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95223

Part marking information http://www.vishay.com/doc?95226

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6 Revision: 05-Jun-08

Document Number: 94106

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-247

(2) R/2

2 x R

(5) L1

0.10 AC

Planting

B

D

(2)

C

2 x b2

3 x b

MM

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

(3)

E/2

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

Ø P

MM

Ø K BD

D2

Thermal pad

Lead assignments

HEXFET

1. - Gate

2. - Drain

3. - Source

4. - Drain

C

C

IGBTs, CoPAK

1. - Gate

2. - Collector

3. - Emitter

4. - Collector

4

(4)
E1

MM

0.01 BD

View A - A

(Datum B)

FP1

D1 (4)

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 FK 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3
b5 2.59 3.38 0.102 0.133 FP 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 FP1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 0.452 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Document Number: 95223 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-08 For technical questions concerning module products, contact: [e-mail]

1

Assembly
lot code

xxxxxxx

V P119X

A

Part Marking Information

Vishay High Power Products

TO-247

Example: This is a xxxxxxx with

Part number

C

Product version (optional):

P = Lead (Pb)-free
None = Standard

Date code:
Year 1 = 2001
Week 19
Line X

assembly lot code AC,
assembled on WW 19, 2001
in the assembly line ”X”

Document Number: 95226 For technical questions concerning discrete products, contact: [e-mail]
Revision: 28-Nov-08 For technical questions concerning module products, contact: [e-mail]

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1

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1