Vishay 70MT060WHTAPBF Data Sheet

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MTP

“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.1 V

V

CE(on)

at TC = 78 °C 70 A

I

C

600 V

70MT060WHTAPbF

Vishay Semiconductors

FEATURES

• NPT warp 2 speed IGBT technology with
positive temperature coefficient

•HEXFRED
reverse recovery

• SMD thermistor (NTC)

•Al

2O3

• Very low stay inductance design for high speed operation

• UL pending

• Speed 60 kHz to 150 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Lower coduction losses and switching losses

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

®

antiparallel diodes with ultrasoft

BDC

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation, IGBT P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 100

= 78 °C 70

T

C

TC = 78 °C 53

Any terminal to case, t = 1 min 2500

TC = 25 °C 347

T

= 100 °C 139

C

600 V

300

300

200

± 20

A

V

W

Revision: 05-Jul-11

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94469

70MT060WHTAPbF

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CESVGE

= 0 V, IC = 500 μA 600 - - V

VGE = 15 V, IC = 70 A - 2.1 2.4

= 15 V, IC = 140 A - 2.8 3.4

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter leaking current I

Gate to emitter leakage current I

CE(on)

GE(th)IC

CES

GES

V

GE

= 15 V, IC = 70 A, TJ = 150 °C - 2.7 3

V

GE

= 0.5 mA 3 - 6

VGE = 0 V, IC = 600 V - - 0.7

V

= 0 V, IC = 600 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Input capacitance C

Reverse transfer capacitance C

Reverse BIAS safe operating area RBSOA

ge

gc

on

off

ts

on

off

ts

on

r

off

f

on

r

off

f

ies

oes

res

g

IC = 70 A

= 480 V

V

CC

V

= 15 V

GE

Rg = 10 
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery, T

= 25 °C

J

Rg = 10 

= 70 A, V

I

C

= 480 V, VGE = 15 V, L = 200 μH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

Rg = 10 
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery

Rg = 10 

= 70 A, V

I

C

= 480 V, VGE = 15 V, L = 200 μH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 300 A

T

J

V

= 400 V, VP = 600 V

CC

R

= 22 , VGE = + 15 V to 0 V

g

Vishay Semiconductors

V

mA

- 460 690

- 160 250

- 70 130

-1.1-

-0.9-

-2-

-1.27-

-1.13-

-2.4-

- 314 -

-49-

- 308 -

-68-

- 312 -

-50-

- 320 -

-78-

- 8000 -

- 790 -

- 110 -

Fullsquare

nCGate to emitter charge (turn-on) Q

mJ

ns

pFOutput capacitane C

Revision: 05-Jul-11

2

For technical questions, contact: [e-mail]

Document Number: 94469

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

70MT060WHTAPbF

R

0

R

1

------ 

1

T

0

-----

1

T

1

-----

–





exp=

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THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)



T0 = 25 °C - 30 - k

T0 = 25 °C
T

= 85 °C

1

(1)

Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

, temperature in Kelvin

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IC = 70 A, VGE = 0 V - 1.64 2.1

Diode forward voltage drop V

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

FM

= 140 A, V

C

= 70 A, VGE = 0 V, TJ = 150 °C - 1.69 1.9

I

C

rr

rr

rr

rr

rr

rr

VCC = 200 V, IC = 70 A
dI/dt = 200 A/μs

VCC = 200 V, IC = 70 A
dI/dt = 200 A/μs

= 125 °C

T

J

= 0 V - 2.1 2.4

GE

Vishay Semiconductors

- 4000 - K

- 96 126 ns

- 9.4 12.8 A

- 440 750 nC

- 140 194 ns

-1419A

- 950 1700 nC

VI

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

Case to sink per module R

IGBT, Diode

IGBT

R

T

J

Stg

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

Weight 66 g

- 40 - 150

°CThermistor - 40 - 125

- 40 - 125

- - 0.36

°C/WDiode --0.8

3 ± 10 % Nm

Revision: 05-Jul-11

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

Document Number: 94469