Vishay 6TQ...PbF Series Data Sheet

TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 6 A
• 175 °C TJ operation
cathode
1
Cathode
35 to 45 V
Base
2
3
Anode
6 A
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 6TQ...PbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
6TQ...PbF Series
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 6 A
Range 35 to 45 V
tp = 5 µs sine 690 A
6 Apk, TJ = 125 °C 0.53 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 6TQ035PbF 6TQ040PbF 6TQ045PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 40 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 164 °C, rectangular waveform 6 A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 140
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 8 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
690
A
1.20 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94252 For technical questions, contact: diodes-tech@vishay.com Revision: 06-Jun-08 1
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6TQ...PbF Series
Vishay High Power Products
Schottky Rectifier, 6 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
6 A
Maximum forward voltage drop See fig. 1
V
FM
12 A 0.73
(1)
6 A
12 A 0.64
Maximum reverse leakage current See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
t
T
S
TJ = 25 °C
(1)
T
= 125 °C 7
J
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 400 pF
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.60
0.53
0.8
0.35 V
18.23 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC
T
R
R
J
, T
thJC
thCS
Stg
DC operation See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
2.2
2g
0.07 oz.
kgf · cm
(lbf · in)
6TQ035
6TQ040
6TQ045
V
mA
°C/W
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Document Number: 94252
2 Revision: 06-Jun-08
6TQ...PbF Series
100
10
Current (A)
- Instantaneous Forward
F
I
1
Schottky Rectifier, 6 A
= 175 °C
T
J
T
= 125 °C
J
TJ = 25 °C
VFM - Forward Voltage Drop (V)
1.40.2 0.4 0.6 0.8 1.0 1.2 1.6
- Reverse Current (mA)
R
I
Vishay High Power Products
100
10
1
0.1
0.01
0.001
0.0001
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 50 °C
0 5 10 15 20 25 30 35 40 45
TJ = 150 °C
TJ = 100 °C
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10
0
20
5030 40
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
0.1
D = 0.50 D = 0.33 D = 0.25
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
D = 0.20
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
P
DM
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
1
thJC
t
2
.
+ T
C
Document Number: 94252 For technical questions, contact: diodes-tech@vishay.com
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Revision: 06-Jun-08 3
6TQ...PbF Series
)
Vishay High Power Products
180
175
170
165
Square wave (D = 0.50) 80 % rated V
160
155
Allowable Case Temperature (°C)
See note (1)
150
01 3 579
I
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
applied
R
2
4
6 8
- Average Forward Current (A)
Average Forward Current
1000
Schottky Rectifier, 6 A
DC
Average Power Loss (W)
5
D = 0.20 D = 0.25 D = 0.33
4
D = 0.50 D = 0.75
3
2
1
0
0123 45 9
I
- Average Forward Current (A)
F(AV)
DC
RMS limit
678
Fig. 6 - Forward Power Loss Characteristics
At any rated load condition and with rated V
100
10
following surge
- Non-Repetitive Surge Current (A
FSM
I
RRM
100
applied
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
V
= 25 V
d
+
Current monitor
D.U.T.
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94252
4 Revision: 06-Jun-08
6TQ...PbF Series
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 50 pieces
Schottky Rectifier, 6 A
Vishay High Power Products
6 T Q 045 PbF
51324
1 - Current rating (6 = 6 A)
2 - Package:
T = TO-220
3 - Schottky “Q” series
4 - Voltage ratings
5 - None = Standard production
PbF = Lead (Pb)-free
035 = 35 V 040 = 40 V 045 = 45 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95221
Part marking information http://www.vishay.com/doc?95224
Document Number: 94252 For technical questions, contact: diodes-tech@vishay.com Revision: 06-Jun-08 5
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DIMENSIONS in millimeters and inches
(6)
E
(7)
E2
Q
(6)
D
D1
13
L3
L4
2
A
Ø P
0.014 AB
Detail B
L
MM
(6) (7)
C
H1
TO-220AC
B
Seating
plane
A
A
A1
Outline Dimensions
Vishay Semiconductors
123
DL1D
H1
θ
E
Thermal pad
D2 (6)
E1 (6)
2 x b2 2 x b
Lead assignments
Diodes 1 + 2 - Cathode
3 - Anode
CC
Detail B
Lead tip
SYMBOL
e1
MM
0.015 AB
c
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A
A2
NOTES SYMBOL
View A - A
Conforms to JEDEC outline TO-220AC
MILLIMETERS INCHES
NOTES
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
(7)
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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