VISHAY 6N1135, 6N1136 Technical data

i179081

1

2

3

4

8

7

6

5

C(VCC)

NC

A

C

NC

B(V

B

)

C(V

O

)

E (GND)

查询6N1135供应商

6N1135/ 6N1136

Vishay Semiconductors

High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated

Features

• Operating Temperature from -55 °C to +110 °C

• Isolation Test Voltage: 5300 V

• TTL Compatible

• High Bit Rates: 1.0 MBd

• Bandwidth 2.0 MHz

• Open-Collector Output

• External Base Wiring Possible

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

RMS

e3

Pb

Pb-free

Agency Approvals

• UL 1577 - File No. E52744 System Code H or J

• DIN EN 60747-5-2 (VDE0884)

• CUL - File No. E52744, equivalent to CSA bulletin
5A

Description

The 6N1135 and 6N1136 are 110 °C rated optocou­plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con­sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.

Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer­ence voltages

Order Information

Part Remarks

6N1135 CTR ≥ 7 %, DIP-8

6N1136 CTR ≥ 19 %, DIP-8

6N1135-X007 CTR ≥ 7 %, SMD-8 (option 7)

6N1136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)

6N1136-X007 CTR ≥ 19 %, SMD-8 (option 7)

6N1136-X009 CTR ≥ 19 %, SMD-8 (option 9)

For additional information on the available options refer to
Option Information.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltages V

Forward current I

Peak forward current t = 1.0 ms, duty cycle 50 % I

Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I

Thermal resistance R

Power dissipation T

Document Number 83909
Rev. 1.5, 26-Oct-04

= 70 °C P

amb

F

FM

FSM

diss

R

th

5.0 V

25 mA

50 mA

1.0 A

700 K/W

45 mW

www.vishay.com

1

6N1135/ 6N1136

Vishay Semiconductors

Output

Parame te r Test condition Symbol Val ue Unit

Supply voltage V

Output voltage V

Emitter-base voltage V

Output current I

CC

O

EBO

O

Maximum output current 16 mA
Base current I

B

Thermal resistance 300 K/W
Power dissipation T

= 70 °C P

amb

diss

Coupler

Paramete r Test condition Symbol Val ue Unit

Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, NOV 74

Storage temperature range T

Ambient temperature range T

Soldering temperature max. ≤ 10 s, dip soldering

t = 1.0 s V

≥ 0.5 mm from case bottom

T

ISO

stg

amb

sld

- 0.5 to 15 V

- 0.5 to 15 V

5.0 V

8.0 mA

5.0 mA

100 mW

5300 V

- 55 to + 125 °C

- 55 to + 110 °C

260 °C

RMS

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parame te r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Breakdown voltage I

Reverse current V

Capacitance V

Temperature coefficient, forward voltage I

= 16 mA V

F

= 10 µAVBR5.0 V

R

= 5.0 V I

R

= 0 V, f = 1.0 MHz C

R

= 16 mA ∆VF/∆T

F

F

R

I

A

1.6 1.9 V

0.5 10 µA

125 pF

-1.7 mV/°C

Output

Paramete r Test condition Par t Symbol Min Ty p. Max Unit

Logic low supply current I

Supply current, logic high I

Output voltage, output low I

Output current, output high I

= 16 mA, VO open, VCC = 15 V I

F

= 0 mA, VO open, VCC = 15 V I

F

= 16 mA, VCC = 4.5 V,

F

= 1.1 mA

I

O

I

= 16 mA, VCC = 4.5 V,

F

= 2.4 mA

I

O

= 0 mA, VO = VCC = 5.5 V I

F

I

= 0 mA, VO = VCC = 15 V I

F

6N1135 V

6N1136 V

CCL

CCH

OL

OL

OH

OH

150 µA

0.01 1 µA

0.1 0.4 V

0.1 0.4 V

3.0 500 nA

0.01 1 µA

www.vishay.com
2

Document Number 83909

Rev. 1.5, 26-Oct-04

6N1135/ 6N1136

Vishay Semiconductors

Coupler

Parameter Test condition Part Symbol Min Ty p. Max Unit

Capacitance (input-output) f = 1.0 MHz C

Current Transfer Ratio I

= 16 mA, VO = 0.4

F

= 4.5 V

V, V

CC

6N1135 CTR 7 16 %

IO

6N1136 CTR 19 35 %

= 16 mA, VO = 0.5

I

F

= 4.5 V

V, V

CC

6N1135 CTR 5 %

6N1136 CTR 15 %

Switching Characteristics

Parame te r Test condition Part Symbol Min Ty p. Max Unit

High-low I

Low-high I

= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 t

F

I

= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 t

F

= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 t

F

I

= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 t

F

PHL

PHL

PLH

PLH

0.6 pF

0.3 1.5 µs

0.2 0.8 µs

0.3 1.5 µs

0.2 0.8 µs

i6n135_01

Pulse generator
Z

=50 Ω

O

t

tf=5 ns

,

r

duty cycle 10%
t≤100 µs

I

F

I

Monitor

F

100

R

L

C
15 pF

5V

V

L

O

1

2

3

4

Ω

ı

8

7

6

5

I

F

t

V

O

V

OL

t

PHL

t

PLH

5V

1.5 V

t

Figure 1. Switching Times

Common Mode Transient Immunity

Parameter Test condition Part Symbol Min Ty p. Max Unit

High I

Low I

= 0 mA, VCM = 10 V

F

I

= 0 mA, VCM = 10 V

F

= 16 mA, VCM = 10 V

F

I

= 16 mA, VCM = 10 V

F

, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 | CMH | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 | CMH | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 | CML | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 | CML | 1000 V/µs

P-P

Document Number 83909
Rev. 1.5, 26-Oct-04

www.vishay.com

3