i179081
1
2
3
4
8
7
6
5
C(VCC)
NC
A
C
NC
B(V
B
)
C(V
O
)
E (GND)
查询6N1135供应商
6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 V
• TTL Compatible
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
e3
Pb
Pb-free
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
Description
The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference voltages
Order Information
Part Remarks
6N1135 CTR ≥ 7 %, DIP-8
6N1136 CTR ≥ 19 %, DIP-8
6N1135-X007 CTR ≥ 7 %, SMD-8 (option 7)
6N1136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007 CTR ≥ 19 %, SMD-8 (option 7)
6N1136-X009 CTR ≥ 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltages V
Forward current I
Peak forward current t = 1.0 ms, duty cycle 50 % I
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s I
Thermal resistance R
Power dissipation T
Document Number 83909
Rev. 1.5, 26-Oct-04
= 70 °C P
amb
F
FM
FSM
diss
R
th
5.0 V
25 mA
50 mA
1.0 A
700 K/W
45 mW
www.vishay.com
1
6N1135/ 6N1136
Vishay Semiconductors
Output
Parame te r Test condition Symbol Val ue Unit
Supply voltage V
Output voltage V
Emitter-base voltage V
Output current I
CC
O
EBO
O
Maximum output current 16 mA
Base current I
B
Thermal resistance 300 K/W
Power dissipation T
= 70 °C P
amb
diss
Coupler
Paramete r Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, NOV 74
Storage temperature range T
Ambient temperature range T
Soldering temperature max. ≤ 10 s, dip soldering
t = 1.0 s V
≥ 0.5 mm from case bottom
T
ISO
stg
amb
sld
- 0.5 to 15 V
- 0.5 to 15 V
5.0 V
8.0 mA
5.0 mA
100 mW
5300 V
- 55 to + 125 °C
- 55 to + 110 °C
260 °C
RMS
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Breakdown voltage I
Reverse current V
Capacitance V
Temperature coefficient, forward voltage I
= 16 mA V
F
= 10 µAVBR5.0 V
R
= 5.0 V I
R
= 0 V, f = 1.0 MHz C
R
= 16 mA ∆VF/∆T
F
F
R
I
A
1.6 1.9 V
0.5 10 µA
125 pF
-1.7 mV/°C
Output
Paramete r Test condition Par t Symbol Min Ty p. Max Unit
Logic low supply current I
Supply current, logic high I
Output voltage, output low I
Output current, output high I
= 16 mA, VO open, VCC = 15 V I
F
= 0 mA, VO open, VCC = 15 V I
F
= 16 mA, VCC = 4.5 V,
F
= 1.1 mA
I
O
I
= 16 mA, VCC = 4.5 V,
F
= 2.4 mA
I
O
= 0 mA, VO = VCC = 5.5 V I
F
I
= 0 mA, VO = VCC = 15 V I
F
6N1135 V
6N1136 V
CCL
CCH
OL
OL
OH
OH
150 µA
0.01 1 µA
0.1 0.4 V
0.1 0.4 V
3.0 500 nA
0.01 1 µA
www.vishay.com
2
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
Coupler
Parameter Test condition Part Symbol Min Ty p. Max Unit
Capacitance (input-output) f = 1.0 MHz C
Current Transfer Ratio I
= 16 mA, VO = 0.4
F
= 4.5 V
V, V
CC
6N1135 CTR 7 16 %
IO
6N1136 CTR 19 35 %
= 16 mA, VO = 0.5
I
F
= 4.5 V
V, V
CC
6N1135 CTR 5 %
6N1136 CTR 15 %
Switching Characteristics
Parame te r Test condition Part Symbol Min Ty p. Max Unit
High-low I
Low-high I
= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 t
F
I
= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 t
F
= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 t
F
I
= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 t
F
PHL
PHL
PLH
PLH
0.6 pF
0.3 1.5 µs
0.2 0.8 µs
0.3 1.5 µs
0.2 0.8 µs
i6n135_01
Pulse generator
Z
=50 Ω
O
t
tf=5 ns
,
r
duty cycle 10%
t≤100 µs
I
F
I
Monitor
F
100
R
L
C
15 pF
5V
V
L
O
1
2
3
4
Ω
ı
8
7
6
5
I
F
t
V
O
V
OL
t
PHL
t
PLH
5V
1.5 V
t
Figure 1. Switching Times
Common Mode Transient Immunity
Parameter Test condition Part Symbol Min Ty p. Max Unit
High I
Low I
= 0 mA, VCM = 10 V
F
I
= 0 mA, VCM = 10 V
F
= 16 mA, VCM = 10 V
F
I
= 16 mA, VCM = 10 V
F
, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 | CMH | 1000 V/µs
P-P
, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 | CMH | 1000 V/µs
P-P
, VCC = 5.0 V, RL = 4.1 kΩ 6N1135 | CML | 1000 V/µs
P-P
, VCC = 5.0 V, RL = 1.9 kΩ 6N1136 | CML | 1000 V/µs
P-P
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
3
6N1135/ 6N1136
Vishay Semiconductors
V
CM
10 V
90%
10% 90%
0V
t
V
O
5V
V
O
V
r
OL
i6n135_02
I
1
F
2
A
B
V
FF
3
4
Pulse generator
+V
CM
Z
t
=50
O
,
tf=8 ns
r
8
7
6
5
5V
R
L
V
O
Figure 2. Common-Mode Interference Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Paramete r Test condition Symbol Min Ty p. Max Unit
Climatic Classification
(according to IEC 68 part 1)
Pollution degree (DIN VDE
0109)
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
V
IOTM
V
IORM
Isolation resistance V
P
SI
I
SI
T
SI
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
Creepage 7.0 mm
Clearance 7.0 mm
Insulation thickness 0.2 mm
V
V
IOTM
IORM
IO
IO
P
SI
I
SI
T
SI
10%
B: I
A: I
=0 mA
F
=16 mA
F
t
t
t
t
f
55/110/21
2.0
175 399
8000 V
630 V
12
10
11
10
500 mA
300 mW
175 °C
Ω
Ω
www.vishay.com
4
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2.3
2.1
1.9
1.7
1.5
1.3
1.1
F
V – Forward Voltage ( V )
0.9
0.7
0.01 0.10 1.00 10.00 100.00
17585
IF – Forward Current ( mA )
–55°C
0°C
25°C
50°C
110 °C
Figure 3. Forward Voltage vs. Forward Current
12
11
10
9
8
7
6
5
4
3
2
C
I – Collector Current ( mA )
17586
T
= 25_C,
amb
1
0
= 5 V, non–saturated
V
CC
0123456789101112131415
VCE – Collector Emitter Voltage ( V )
IF = 25 mA
20 mA
15 mA
10 mA
5 mA
1000
100
VCC= VCE = 15 V
10
1
0.1
0.01
CE0
I – Collector Emitter Leakage Current (nA)
–55 –35 –15 5 25 45 65 85 105 125
T
17590
– Ambient Temperature ( _C )
amb
VCC= VCE = 5 V
Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Norm
Normalized to IF = 10 mA,
0.4
CTR – Normalized CTR
0.2
0.0
17630
= 25_C, VCC= 5 V
T
amb
V
= 0.4 V, saturated
O
–55 –35 –15 5 25 45 65 85 105 125
T
– Ambient Temperature ( °C )
amb
IF = 1 mA
5 mA
10 mA
Figure 4. Collector Current vs. Collector Emitter Voltage
8
T
= 25_C,
amb
7
V
= 5 V,
CC
saturated
6
5
4
3
2
C
I – Collector Current ( mA )
1
0
0.0 0.1 0.2 0.3 0.4 0.5
17629
VCE – Collector Emitter Voltage ( V )
IF = 25 mA
20 mA
15 mA
10 mA
5 mA
1 mA
Figure 5. Collector Current vs. Collector Emitter Voltage
Document Number 83909
Rev. 1.5, 26-Oct-04
Figure 7. Normalized Current Transfer Ratio vs. Ambient
Temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
Norm
Normalized to IF = 16 mA,
0.50
T
CTR – Normalized CTR
0.25
0.00
17631
amb
V
O
–55 –35 –15 5 25 45 65 85 105 125
IF = 1 mA
= 25_C, VCC= 5 V
= 0.4 V, saturated
T
– Ambient Temperature ( °C )
amb
5 mA
10 mA
16 mA
Figure 8. Normalized Current Transfer Ratio vs. Ambient
Temperature
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5
6N1135/ 6N1136
Vishay Semiconductors
7
IF = 20 mA
6
5
16 mA
4
3
VCC= 5 V,
= 0.4 V, saturated
V
2
O
C
1
I – Collector Current ( mA )
0
–55 –35 –15 5 25 45 65 85 105 125
T
17587
– Ambient Temperature ( °C )
amb
Figure 9. Output Current vs. Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Norm
CTR – Normalized CTR
Normalized to IF = 10 mA,
0.4
T
= 25_C, VCC= 5 V
amb
0.2
V
= 5 V, non–saturated
O
0.0
–55 –35 –15 5 25 45 65 85 105 125
T
17632
– Ambient Temperature ( °C )
amb
IF = 1 mA
5 mA
10 mA
10 mA
2 mA
1 mA
1.4
1.3
50°C
110 °C
1.2
FE
1.1
1.0
0.9
0.8
Normalized h
0.7
0.6
Normalized to
I
V
= 20 µA, T
B
= 5 V, non saturated
O
–55°C
0°C
amb
25°C
= 25_C,
0.5
0.10 1.00 10.00 100.00
17634
IB – Base Current ( mA )
Figure 12. Normalized HFE vs. Base Current
2.0
1.8
1.6
1.4
FE
1.2
1.0
0.8
Normalized h
0.6
0.4
0.2
0°C
–55°C
Normalized to
= 20 µA, T
I
B
V
= 0.4 V, saturated
O
0.0
0.10 1.00 10.00 100.00
17635
IB – Base Current ( mA )
amb
110 °C
25°C
= 25_C,
50°C
Figure 10. Normalized Current Transfer Ratio vs. Ambient
Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Norm
CTR – Normalized CTR
Normalized to IF = 16 mA,
0.4
T
0.2
V
0.0
–55 –35 –15 5 25 45 65 85 105 125
17633
IF = 1 mA
5 mA
= 25_C, VCC= 5 V
amb
= 5 V, non–saturated
O
T
– Ambient Temperature ( °C )
amb
10 mA
16 mA
Figure 11. Normalized Current Transfer Ratio vs. Ambient
Temperature
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6
Figure 13. Normalized HFE vs. Base Current
100.00
–55°C
m
10.00
1.00
0°C
25°C
50°C
0.10
p
I – Photo Current ( A )
110 °C
VCC= 5 V
0.01
0.01 0.10 1.00 10.00 100.00
17636
IF – Forward Current ( mA )
Figure 14. Photo Current vs. Forward Current
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
10
1
–55°C
0°C
0.1
25°C
0.01
Norm. Photo Current
0.001
0.0001
110 °C
50°C
VCC= 5 V
normalized to
= 16 mA
I
F
0.01 0.10 1.00 10.00 100.00
17637
IF – Forward Current ( mA )
Figure 15. Photo Current vs. Forward Current
3000
VCC= VO= 5 V,
I
2500
2000
1500
1000
t – Switching Time ( ns )
17638
= 16 mA
F
T
= 25 °C
amb
500
t
off
t
on
0
0.0 0.5 1.0 1.5 2.0 2.5
RL – Load Resistance ( kΩ )
1800
VCC= 5 V, IF = 16 mA
1600
R
= 1.9 kΩ, T
1400
L
1200
1000
800
600
400
200
P
t – Propagation Delay time ( ns )
0
amb
= 25 °C
t
( 1.5V )
PLH
t
PHL
t
PLH
( 1.5V )
t
PHL
( 3V )
( 3V )
–55 –35 –15 5 25 45 65 85 105 125
T
17588
– Ambient Temperature ( °C )
amb
Figure 18. Propagation Delay vs. Ambient Temperature
3000
T
= 25 °C, VCC= 5 V,
amb
I
= 16 mA, RL= 4.1 kΩ
F
2500
2000
1500
1000
500
P
t – Propagation Delay time ( ns )
0
–55 –35 –15 5 25 45 65 85 105 125
T
17589
– Ambient Temperature ( °C )
amb
t
PLH
t
PHL
t
PLH
( 1.5V )
( 1.5V )
t
PHL
( 3V )
( 3V )
Figure 16. Switching Time vs. Load Resistance
25000
20000
15000
10000
t – Switching Time ( ns )
17639
VCC= VO= 5 V,
I
= 16 mA
F
T
= 25 °C
amb
5000
0
0 5 10 15 20
RL – Load Resistance ( kΩ )
Figure 17. Switching Time vs. Load Resistance
Document Number 83909
Rev. 1.5, 26-Oct-04
Figure 19. Propagation Delay vs. Ambient Temperature
0.6
0.5
t
off
0.4
0.3
0.2
VCC = VO = 5 V,
R
= 100 Ω, R
T
L
amb
= 25_C
t
on
0.1
Small Signal Current Transfer Ratio
0.0
LED
= 50 Ω,
0 5 10 15 20 25
17591
IF – Forward Current ( mA )
Figure 20. Small Signal CTR vs. Forward Current
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7
6N1135/ 6N1136
Vishay Semiconductors
/ Small Signal Current
O
/∆i
F
∆i
i6n135_11
0.6
0.5
0.4
0.3
0.2
Transfer Ratio
0.1
0
0
5
(VCC= 5.0 V, RL= 100 Ω)
10 15 20 25
IF/mA
Package Dimensions in Inches (mm)
pin one ID
.255 (6.48)
.268 (6.81)
4
3
5
6
1
2
78
Figure 21. Small Signal Current Transfer Ratio vs. Quiescent Input
Current
ISO Method A
i178006
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.379 (9.63)
.390 (9.91)
.100 (2.54) typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.300 (7.62)
typ.
10°
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.230(5.84)
.250(6.35)
www.vishay.com
8
Document Number 83909
Rev. 1.5, 26-Oct-04
6N1135/ 6N1136
Vishay Semiconductors
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.028 (0.7)
MIN.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18450
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
9
6N1135/ 6N1136
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
10
Document Number 83909
Rev. 1.5, 26-Oct-04
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