)
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FEATURES
• High surge current capability
• Avalanche types available
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V V
• RoHS compliant
6F(R) Series
RoHS
COMPLIANT
RRM
DO-203AA (DO-4
TYPICAL APPLICATIONS
• Converters
PRODUCT SUMMARY
I
F(AV)
6 A
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
T
J
T
C
50 Hz 159
60 Hz 167
50 Hz 134
60 Hz 141
Range 100 to 1200 V
6A
160 °C
9.5 A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE
NUMBER
6F(R)
Note
(1)
Avalanche version only available from V
VOLTAGE
CODE
10 100 150 -
20 200 275 -
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400 V to 1200 V
RRM
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
, MINIMUM
R(BR)
AVALANCHE VOLTAGE
(1)
V
A
A2s
I
RRM
AT T
MAXIMUM
= 175 °C
J
mA
12
6F(R) Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 6 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum non-repetitive peak reverse power P
I
F(AV)
F(RMS)
(1)
R
180° conduction, half sine wave
10 µs square pulse, TJ = TJ maximum 4 K/W
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms 167
t = 10 ms
t = 8.3 ms 141
t = 10 ms
Maximum I
2
t for fusing I2t
t = 8.3 ms 116
t = 10 ms
t = 8.3 ms 82
Maximum I
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum forward voltage drop V
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1270 A2√s
F(TO)1
F(TO)2
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
f1
(I > π x I
f2
Ipk = 19 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.10 V
FM
Note
(1)
Available only for avalanche version, all other parameters the same as 6F
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
Sinusoidal half wave,
initial T
maximum
T
J
RRM
=
J
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 0.86
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 5.6
F(AV)
), TJ = TJ maximum 0.63
F(AV)
), TJ = TJ maximum 15.7
F(AV)
6A
160 °C
9.5 A
159
134
127
90
A
A
V
mΩ
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style See dimensions - link at the end of datasheet DO-203AA (DO-4)
T
J
- 65 to 175
°C
T
Stg
R
thJC
DC operation 2.5
- 65 to 200
K/W
R
thCS
Mounting surface, smooth, flat and greased 0.5
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N · m
(lbf · in)
7g
0.25 oz.
6F(R) Series
Standard Recovery Diodes
Vishay High Power Products
(Stud Version), 6 A
ΔR
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180°
120°
90°
60°
30°
175
170
165
6F(R) Series
R (D C) = 2. 5 K /W
thJ C
0.34 0.29
0.44 0.48
0.57 0.63
0.85 0.88
1.37 1.39
when devices operate at different conduction angles than DC
thJC
Con duction Angle
175
170
165
T
= TJ maximum K/W
J
6F(R) Series
R (DC) = 2.5 K/ W
thJC
Con duction Period
160
Maxi mum Al lowable Case Temperature (°C)
155
01234567
30°
Average Forward Current (A)
60°
90°
120°
180°
160
Max i mum All owable Case Temperature (°C)
155
02468 10
Average Forward Current (A)
30°
60°
90°
120°
180°
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
6
5
4
3
2
1
Max i mum Average Forward Power Loss (W)
0
0123456
180°
120°
90°
60°
30°
RMS Li mit
Con duction Angle
6F(R) Series
T = 175°C
Average Forward Current (A)
3
0
K
/
4
0
K
/
W
5
0
K
/
W
J
0 255075100
Max i mum Allowable Ambient Temperature (°C)
R
t
h
W
1
S
5
A
K
/
W
=
2
0
K
/
W
-
D
e
l
t
a
R
Fig. 3 - Forward Power Loss Characteristics
DC
6F(R) Series
Vishay High Power Products
8
7
6
5
4
3
2
1
Maxi m um Averag e For ward Power Loss (W)
0
150
At Any Rated Load Condition And With
140
Ra te d V Applied Foll owing Surge.
RRM
130
120
110
100
90
80
70
60
6F( R) S erie s
50
Peak Ha lf Si ne Wave Forward Current (A)
40
110100
Number Of Equal Amplitude Ha lf Cyc le C urrent Pulses (N)
DC
180°
120°
90°
60°
30°
RMS Limit
02468 10
Average Forward Current (A)
Initial T = 175°C
J
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 010 0 s
Standard Recovery Diodes
(Stud Version), 6 A
R
t
2
0
K
/
3
0
K
/
W
4
0
K/
W
5
0
Conduction Period
6F(R) Series
T = 175 °C
J
K/
W
0 255075100
Max i mum All owable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
h
W
S
100 0
100
10
Instantaneous Forward Current (A)
1
0
K
A
=
1
5
6F(R) Seri es
1
00.511.522.5
/
K
W
/
W
-
D
e
l
t
a
R
T = 25°C
J
T = 175°C
J
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
Max imum Non Re petiti ve Surge Current
150
140
130
120
110
100
90
80
70
60
50
6F(R) Ser ies
40
Peak Hal f Si ne Wave Forward Current (A)
30
0.01 0.1 1
Versus Pulse Train Duration.
Pulse Train Duration ( s)
Initial T = 175°C
No Volta ge Reappli ed
Ra te d V Reapplied
RRM
J
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
10
Stead y State Value
R = 2.5 K /W
thJC
(DC Operation)
thJC
1
6F(R) Series
Transient T hermal Imped anc e Z (K/W)
0.1
0.0 01 0 .0 1 0.1 1 1 0
Square Wave Pulse Durati on (s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
6F(R) Series
ORDERING INFORMATION TABLE
Device code
Standard Recovery Diodes
(Stud Version), 6 A
6 F R 120 M
- Current rating: Code = I
1
- F = Standard device
2
None = Stud normal polarity (cathode to stud)
-
3
R = Stud reverse polarity (anode to stud)
- Voltage code x 10 = V
4
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
-
5
M = Stud base DO-203AA (DO-4) M5 x 0.8
(not available for avalanche diode)
RRM
Vishay High Power Products
51324
F(AV)
(see Voltage Ratings table)
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
DO-203AA (DO-4)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
+ 0.3
2
0
+ 0.01
(0.08 )
3.30 (0.13)
4.00 (0.16)
0
10/32" UNF-2A
For metric devices: M5 x 0.8
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
11 (0.43)
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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