Datasheet 65PQ015PBF DataSheet (Vishay)

TO-2 47AC
Schottky Rectifier, 65 A
• TO-247 package
Base cathode
2
13
Anode Anode
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long term reliability
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
65PQ015PbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
65 A
15 V
870 mA at 100 °C
DESCRIPTION
The 65PQ015PbF Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 65 A
15 V
tp = 5 µs sine 1500 A
65 Apk, TJ = 125 °C 0.46 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 65PQ015PbF UNITS
Maximum DC reverse voltage V
TJ = 100 °C 15
R
T
= 125 °C 5
J
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 83 °C, rectangular waveform 65
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 400
TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
1500
A
2A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94246 For technical questions, contact: diodes-tech@vishay.com Revision: 12-Sep-08 1
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65PQ015PbF
Vishay High Power Products
Schottky Rectifier, 65 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
65 A
Forward voltage drop V
FM
(1)
65 A
130 A 0.71
130 A 0.76
TJ = 125 °C VR = 5 V 1.2 A
(1)
Reverse leakage current I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
T
J
T
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 4300 pF
T
Measured lead to lead 5 mm from package body 8 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
= 25 °C
J
= 125 °C
T
J
= 25 °C
= 100 °C 870
R
V
= Rated V
R
R
0.50
0.46
18
0.137 mV
4.9 mΩ
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
J
Stg
R
DC operation 0.8
thJC
R
thCS
Mounting surface, smooth and greased 0.3
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Non-lubricated threads
Marking device Case style TO-247AC (JEDEC) 65PQ015
- 55 to 125
- 55 to 150
°C
°C/W
6g
0.21 oz.
6 (5)
kgf · cm
(lbf · in)
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Document Number: 94246
2 Revision: 12-Sep-08
65PQ015PbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
V
TJ = 125 °C
J
T
= 100 °C
J
J
= 25 °C
T
J
0.5 1.0 1.5
- Forward Voltage Drop (V)
FM
Schottky Rectifier, 65 A
- Reverse Current (mA)
R
I
2.0
Vishay High Power Products
1000
TJ = 100 °C
100
TJ = 75 °C
TJ = 50 °C
10
TJ = 25 °C
1
246
0
V
- Reverse Voltage (V)
R
81012
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
14
16
TJ = 25 °C
- Junction Capacitance (pF)
T
C
1000
2
64 8 10 12
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
14
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
16
P
DM
t
1
t
2
1/t2
+ T
thJC
C
100 10
Document Number: 94246 For technical questions, contact: diodes-tech@vishay.com
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Revision: 12-Sep-08 3
65PQ015PbF
Vishay High Power Products
150
120
90
Square wave (D = 0.50)
60
5 V applied
30
0
0
See note (1)
4020 60 80
I
- Average Forward Current (A)
F(AV)
Allowable Case Temperature (°C)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
10 000
1000
Schottky Rectifier, 65 A
Average Power Loss (W)
100
At any rated load condition and with rated V following surge
RRM
applied
80
D = 0.20 D = 0.25 D = 0.33
60
D = 0.50 D = 0.75
40
20
0
0
I
- Average Forward Current (A)
F(AV)
DC
4020 60 80
RMS limit
Fig. 6 - Forward Power Loss Characteristics
100
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 5 V
REV
- Non-Repetitive Surge Current (A)
100
FSM
I
10
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current monitor
Fig. 8 - Unclamped Inductive Test Circuit
) x R
F(AV)
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
100 1000
L
IRFP460
= 25 Ω
R
g
High-speed
switch
Freewheel
diode
40HFL40S02
10 000
V
= 25 V
d
+
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94246
4 Revision: 12-Sep-08
65PQ015PbF
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 25 pieces
Schottky Rectifier, 65 A
65 P Q 015 PbF
51324
1 - Current rating (65 = 65 A)
2 - Package:
P = TO-247
3 - Schottky “Q” series
4 - Voltage code (015 = 15 V)
5
-
None = Standard production
PbF = Lead (Pb)-free
Vishay High Power Products
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
SPICE model http://www.vishay.com/doc?95306
Document Number: 94246 For technical questions, contact: diodes-tech@vishay.com Revision: 12-Sep-08 5
www.vishay.com
DIMENSIONS in millimeters and inches
0.10 AC
MM
E
E/2
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
D
D
A
A2
A
A
A1
C
Ø K BD
MM
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
MM
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
TO-247
SYMBOL
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Document Number: 95223 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 01-Dec-10 DiodesAmericas@vishay.com
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 FK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3 b5 2.59 3.38 0.102 0.133 FP 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 FP1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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