Vishay 65PQ015PBF Data Sheet

TO-2 47AC

Schottky Rectifier, 65 A

FEATURES

• TO-247 package

Base cathode

2

13

Anode Anode

• 125 °C TJ operation (VR < 5 V)

• Single diode configuration

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• Guard ring for enhanced ruggedness and long term
reliability

• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance

• Lead (Pb)-free (“PbF” suffix)

• Designed and qualified for industrial level

65PQ015PbF

Vishay High Power Products

Pb-free

Available

RoHS*

COMPLIANT

PRODUCT SUMMARY

I

F(AV)

V

R

I

RM

65 A

15 V

870 mA at 100 °C

DESCRIPTION

The 65PQ015PbF Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 65 A

15 V

tp = 5 µs sine 1500 A

65 Apk, TJ = 125 °C 0.46 V

Range - 55 to 125 °C

VOLTAGE RATINGS

PARAMETER SYMBOL TEST CONDITIONS 65PQ015PbF UNITS

Maximum DC reverse voltage V

TJ = 100 °C 15

R

T

= 125 °C 5

J

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 83 °C, rectangular waveform 65

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 400

TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

1500

A

2A

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94246 For technical questions, contact: [e-mail]
Revision: 12-Sep-08 1

www.vishay.com

65PQ015PbF

Vishay High Power Products

Schottky Rectifier, 65 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

65 A

Forward voltage drop V

FM

(1)

65 A

130 A 0.71

130 A 0.76

TJ = 125 °C VR = 5 V 1.2 A

(1)

Reverse leakage current I

RM

Threshold voltage V

Forward slope resistance r

Maximum junction capacitance C

Typical series inductance L

F(TO)

T

J

T

J

TJ = TJ maximum

t

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 4300 pF

T

Measured lead to lead 5 mm from package body 8 nH

S

Maximum voltage rate of change dV/dt Rated V

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

T

= 25 °C

J

= 125 °C

T

J

= 25 °C

= 100 °C 870

R

V

= Rated V

R

R

0.50

0.46

18

0.137 mV

4.9 mΩ

10 000 V/µs

V

mA

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

J

Stg

R

DC operation 0.8

thJC

R

thCS

Mounting surface, smooth and greased 0.3

Approximate weight

Mounting torque

minimum

maximum 12 (10)

Non-lubricated threads

Marking device Case style TO-247AC (JEDEC) 65PQ015

- 55 to 125

- 55 to 150

°C

°C/W

6g

0.21 oz.

6 (5)

kgf · cm

(lbf · in)

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94246

2 Revision: 12-Sep-08

65PQ015PbF

1000

100

10

- Instantaneous

F

I

Forward Current (A)

1

0

V

TJ = 125 °C

J

T

= 100 °C

J

J

= 25 °C

T

J

0.5 1.0 1.5

- Forward Voltage Drop (V)

FM

Schottky Rectifier, 65 A

- Reverse Current (mA)

R

I

2.0

Vishay High Power Products

1000

TJ = 100 °C

100

TJ = 75 °C

TJ = 50 °C

10

TJ = 25 °C

1

246

0

V

- Reverse Voltage (V)

R

81012

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10 000

14

16

TJ = 25 °C

- Junction Capacitance (pF)

T

C

1000

2

64 8 10 12

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1

0.1

Single pulse

(thermal resistance)

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

14

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

Characteristics

thJC

16

P

DM

t

1

t

2

1/t2

+ T

thJC

C

100 10

Document Number: 94246 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 12-Sep-08 3