Vishay 63CTQ100GPBF Data Sheet

63CTQ100GPbF

Vishay High Power Products

Schottky Rectifier, 2 x 30 A

	Base
	common
	cathode
	2
1	2	3
Anode	Common	Anode
TO-220AB	cathode

PRODUCT SUMMARY

IF(AV)	2 x 30 A
VR	100 V

FEATURES

	• 175 °C TJ operation
	• Center tap TO-220 package		Pb-free
	•	Low forward voltage drop	Available
			RoHS*
	•	High frequency operation

•High purity, high temperature epoxy COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance

•Guard ring for enhanced ruggedness and long term reliability

•Lead (Pb)-free (“PbF” suffix)

•Designed and qualified for industrial level

DESCRIPTION

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL			CHARACTERISTICS			VALUES	UNITS
IF(AV)		Rectangular waveform (per device)				60		A
VRRM						100		V
IFRM		TC = 139 °C (per leg)				60		A
IFSM		tp = 5 µs sine				1500
VF		30 Apk, TJ = 125 °C				0.69		V
TJ		Range				- 65 to 175		°C
VOLTAGE RATINGS
PARAMETER				SYMBOL		63CTQ100GPbF	UNITS
Maximum DC reverse voltage				VR		100		V
Maximum working peak reverse voltage				VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER			SYMBOL	TEST CONDITIONS			VALUES		UNITS
Maximum average		per leg	IF(AV)	50 % duty cycle at TC = 139 °C, rectangular waveform			30
forward current		per device					60
Peak repetitive forward current per leg			IFRM	Rated VR, square wave, 20 kHz, TC = 140 °C			60		A
Maximum peak one cycle non-repetitive				5 µs sine or 3 µs rect. pulse		Following any rated load	1500
			IFSM			condition and with rated
surge current per leg				10 ms sine or 6 ms rect. pulse			300
						VRRM applied
Non-repetitive avalanche energy per leg			EAS	TJ = 25 °C, IAS = 0.75 A, L = 40 mH			11.25		mJ
Repetitive avalanche current per leg			IAR	Current decaying linearly to zero in 1 µs			0.75		A
				Frequency limited by TJ maximum VA = 1.5 x VR typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94508		For technical questions, contact: [e-mail]					www.vishay.com
Revision: 12-Sep-08								1

63CTQ100GPbF

Vishay High Power Products			Schottky Rectifier, 2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		TYP.	MAX.				UNITS
				30 A	TJ = 25 °C	0.78		0.82
Maximum forward voltage drop		VFM (1)		60 A		0.94		1.0			V
				30 A	TJ = 125 °C	0.64		0.69
				60 A		0.78		0.83
Maximum instantaneous reverse current		IRM		TJ = 25 °C	VR = Rated VR	0.02		0.3			mA
				TJ = 125 °C		11		20
Maximum junction capacitance		CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		1100					pF
Typical series inductance		LS		Measured from top of terminal to mounting plane		8.0					nH
Maximum voltage rate of change		dV/dt		Rated VR		10 000					V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES				UNITS
Maximum junction and storage		TJ, TStg				- 65 to 175					°C
temperature range
Maximum thermal resistance,		RthJC		DC operation		1.2
junction to case per leg
											°C/W
Typical thermal resistance,		RthCS		Mounting surface, smooth and greased		0.50
case to heatsink
Approximate weight						2					g
						0.07					oz.
Mounting torque	minimum			Non-lubricated threads		6 (5)				kgf cm
										(lbf in)
	maximum					12 (10)
Marking device				Case style TO-220AB		63CTQ100G

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94508
2		Revision: 12-Sep-08

63CTQ100GPbF

Schottky Rectifier, 2 x 30 A Vishay High Power Products

													1000
	1000												100			Tj = 175˚C
												<![if ! IE]> <![endif]>(mA)				125˚C
																150˚C
												<![if ! IE]> <![endif]>R	10			100˚C
												<![if ! IE]> <![endif]>I
												<![if ! IE]> <![endif]>-	1
												<![if ! IE]> <![endif]>Current				50˚C
													0.1
																75˚C
<![if ! IE]> <![endif]>(A)												<![if ! IE]> <![endif]>Reverse	0.001			25˚C
													0.01
<![if ! IE]> <![endif]>F		100
<![if ! IE]> <![endif]>I													0.0001
<![if ! IE]> <![endif]>-
<![if ! IE]> <![endif]>Current													0	20	40	60		80	100
<![if ! IE]> <![endif]>Forward														Reverse Voltage - VR (V)
													Fig. 2 - Typical Values of Reverse Current vs.
<![if ! IE]> <![endif]>Instantaneous															Reverse Voltage
												<![if ! IE]> <![endif]>C
												1000
												<![if ! IE]> <![endif]>(pF)		Tj = 25˚C
		10
												<![if ! IE]> <![endif]>T
												<![if ! IE]> <![endif]>-
								Tj = 125˚C				<![if ! IE]> <![endif]>Capacitance
								Tj = 175˚C
								Tj =	25˚C			<![if ! IE]> <![endif]>Junction
		1											100
		0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8		0	20	40	60		80	100
				Forward Voltage Drop - VFM (V)										Reverse Voltage - V			R	(V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics	Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]>

<![endif]>Thermal Impedance Z (°C/W) thJC

10
1	D = 0.75
	D = 0.50
	D = 0.33
	D = 0.25		PDM
0.1	D = 0.20
			t1
	Single Pulse		t 2
0.01	(Thermal Resistance)	Notes:
		1. Duty factor D =	t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

0.001

0.00001	0.0001	0.001	0.01	0.1	1	10
	t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94508	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 12-Sep-08		3