Vishay 63CTQ100GPBF Data Sheet
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2 x 30 A
FEATURES
• 175 °C TJ operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
Anode
1
Base
common
cathode
2
2
Common
cathode
2 x 30 A
100 V
3
Anode
63CTQ100GPbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
Rectangular waveform (per device) 60 A
100 V
TC = 139 °C (per leg) 60
tp = 5 µs sine 1500
30 Apk, TJ = 125 °C 0.69 V
Range - 65 to 175 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL 63CTQ100GPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
Peak repetitive forward current per leg I
Maximum peak one cycle non-repetitive
surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 60
I
F(AV)
FRM
I
FSM
AR
50 % duty cycle at TC = 139 °C, rectangular waveform
Rated VR, square wave, 20 kHz, TC = 140 °C 60
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 300
TJ = 25 °C, IAS = 0.75 A, L = 40 mH 11.25 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
30
A
1500
0.75 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94508 For technical questions, contact: diodes-tech@vishay.com
Revision: 12-Sep-08 1
www.vishay.com
63CTQ100GPbF
Vishay High Power Products
Schottky Rectifier, 2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
30 A
Maximum forward voltage drop V
FM
(1)
30 A
60 A 0.94 1.0
60 A 0.78 0.83
Maximum instantaneous reverse current I
Maximum junction capacitance C
Typical series inductance L
RM
TJ = 25 °C
T
= 125 °C 11 20
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1100 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.78 0.82
0.64 0.69
0.02 0.3
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device Case style TO-220AB 63CTQ100G
T
, T
J
Stg
DC operation 1.2
R
thJC
R
thCS
Mounting surface, smooth and greased 0.50
Non-lubricated threads
- 65 to 175 °C
°C/W
2g
0.07 oz.
6 (5)
kgf ⋅ cm
(lbf ⋅ in)
V
mA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94508
2 Revision: 12-Sep-08
63CTQ100GPbF
1000
(A)
F
100
10
Instantaneous Forward Current - I
Schottky Rectifier, 2 x 30 A
(mA)
Reverse Current - I
( p F)
Vishay High Power Products
1000
100
10
R
1
0.1
0.01
0.001
0.0001
0 20406080100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 25˚C
T
Tj = 175˚C
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0.1
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
(°C/W)
thJC
Single Pulse
0.01
Thermal Impedance Z
(Thermal Resistance)
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance - C
100
0 20406080100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
Document Number: 94508 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 12-Sep-08 3
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