Vishay 63CPT100 Data Sheet

Schottky Generation 5.0, 2 x 30 A
Anode
TO-2 47AC
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 30 A at 125 °C 0.64 V
F
High Performance
Base
common
2
cathode
Anode
2
Common
13
cathode
2 x 30 A
100 V
63CPT100
Vishay High Power Products
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
vs. IR trade off for high efficiency
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
V
F
T
J
Rectangular waveform 60 A
100
30 Apk, TJ = 125 °C (typical, per leg) 0.61
Range - 55 to 175 °C
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 63CPT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
per leg
per device 60
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 156 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 450
AS
TJ = 25 °C, IAS = 3 A, L = 30 mH 135 mJ
Limited by frequency of operation and time pulse duration so that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load condition and with rated V
applied
RRM
2200
I
T
J
30
at
AS
max.
A
A
Document Number: 94535 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Oct-08 1
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63CPT100
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
30 A
60 A - 0.9
RM
FM
(1)
30A
60 A - 076
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1650 - pF
T
Measured lead to lead 5 mm from package body 7.5 - nH
S
Forward voltage drop per leg V
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
= 125 °C - 15 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per device
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-247AC 63CPT100
minimum 6 (5)
maximum 12 (10)
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth and greased 0.25
-0.77
-0.64
- 200 µA
- 10 000 V/µs
- 55 to 175 °C
0.8
0.4
6g
0.21 oz.
°C/W
kgf · cm
(lbf · in)
V
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Document Number: 94535
63CPT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 30 A
1000
TJ = 175 °C
100
TJ = 125 °C
Current (A)
10
- Instantaneous Forward
F
I
1
0.20 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ = 25 °C
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
10 000
100
175 °C
10
1
0.1
- Reverse Current (mA)
0.01
R
I
0.001
0204060
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
80 100
VR - Reverse Voltage (V)
Reverse Voltage
1000
- Junction Capacitance (pF)
T
C
100
0204060
80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
(°C/W)
1
thJC
0.1
0.01
Single pulse
(Thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Thermal Impedance Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
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Revision: 07-Oct-08 3
63CPT100
Vishay High Power Products
180
175
170
165
160
155
Square wave (D = 0.50) 80 % rated V
150
Allowable Case Temperature (°C)
see note (1)
145
0 5 10 15 20 25 30 35 40 45
I
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
applied
r
- Average Forward Current (A)
Average Forward Current
10 000
High Performance
Schottky Generation 5.0,
2 x 30 A
DC
Aver age Power Loss (W)
30
25
20
15
10
5
0
180° 120° 90° 60° 30°
RMS limit
DC
0 5 10 15 20 25 30 35 40 45
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
1000
Current (A)
- Non-Repetitive Surge
FSM
I
) x R
REV
x VFM at (I
100
10 100 1000 10 000
Square Wave Pulse Duration - tp (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
;
thJC
/D) (see fig. 6);
F(AV)
R
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63CPT100
1000
100
10
Avalanche Current (A)
1
110
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
1000
High Performance
Schottky Generation 5.0,
2 x 30 A
TJ = 125 °C
TJ = 175 °C
Rectangular Pulse Duration (µs)
Vishay High Power Products
TJ = 25 °C
100
Avalanche Energy (mJ)
100
10
TJ = 25 °C
TJ = 125 °C
TJ = 175 °C
1
1
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
10
100
Document Number: 94535 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Oct-08 5
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63CPT100
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 25 pieces
High Performance
Schottky Generation 5.0,
2 x 30 A
63 C P T 100
1 - Current rating (60 A)
- Circuit configuration:
2
C = Common cathode
- Package:
3
P = TO-247
4 - T = Trench
5 - Voltage code (100 V)
51324
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
SPICE model http://www.vishay.com/doc?95227
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 07-Oct-08
Document Number: 94535
DIMENSIONS in millimeters and inches
0.10 AC
MM
E
E/2
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
D
D
A
A2
A
A
A1
C
Ø K BD
MM
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
MM
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
TO-247
SYMBOL
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Document Number: 95223 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 01-Dec-10 DiodesAmericas@vishay.com
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 FK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3 b5 2.59 3.38 0.102 0.133 FP 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 FP1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
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