Vishay 63CPT100 Data Sheet

63CPT100

Vishay High Power Products

High Performance

Schottky Generation 5.0, 2 x 30 A

	Base	2
	common
	cathode
	Anode	2	Anode
TO-247AC	1 Common 3
	cathode

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized VF vs. IR trade off for high efficiency

•Increased ruggedness for reverse avalanche capability

•RBSOA available

•Negligible switching losses

•Submicron trench technology

•Full lead (Pb)-free and RoHS compliant devices

•Designed and qualified for industrial level

APPLICATIONS

• High efficiency SMPS

PRODUCT SUMMARY

•

Automotive

IF(AV)

2 x 30 A

•

High frequency switching

VR

100 V

•

Output rectification

VF at 30 A at 125 °C

0.64 V

•

Reverse battery protection

• Freewheeling

•

Dc-to-dc systems

• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

60

A

VRRM

100

V

VF

30 Apk, TJ = 125 °C (typical, per leg)

0.61

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

63CPT100

UNITS

Maximum DC reverse voltage

VR

TJ = 25 °C

100

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

per leg

IF(AV)

50 % duty cycle at TC = 156 °C, rectangular waveform

30

forward current

per device

60

A

Maximum peak one cycle

5 µs sine or 3 µs rect. pulse

Following any rated load

2200

IFSM

condition and with rated

non-repetitive surge current

10 ms sine or 6 ms rect. pulse

450

VRRM applied

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 3 A, L = 30 mH

135

mJ

Limited by frequency of operation and time pulse duration so

IAS at

Repetitive avalanche current

IAR

that TJ < TJ max. IAS at TJ max. as a function of time pulse

A

TJ max.

See fig. 8

Document Number: 94535

For technical questions, contact: [e-mail]

www.vishay.com

Revision: 07-Oct-08

1

63CPT100

Vishay High Power Products				High Performance
				Schottky Generation 5.0,
				2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		TYP.		MAX.			UNITS
				30 A	TJ = 25 °C	-		0.77
Forward voltage drop per leg		VFM (1)		60 A		-		0.9			V
				30A	TJ = 125 °C	-		0.64
				60 A		-		076
Reverse leakage current per leg		IRM (1)		TJ = 25 °C	VR = Rated VR	-		200			µA
				TJ = 125 °C		-		15			mA
Junction capacitance per leg		CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		1650		-			pF
Series inductance per leg		LS		Measured lead to lead 5 mm from package body		7.5		-			nH
Maximum voltage rate of change		dV/dt		Rated VR		-		10 000			V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES				UNITS
Maximum junction and		TJ, TStg				- 55 to 175					°C
storage temperature range
Maximum thermal resistance,						0.8
junction to case per leg
		RthJC		DC operation
Maximum thermal resistance,						0.4					°C/W
junction to case per device
Typical thermal resistance,		RthCS		Mounting surface, smooth and greased		0.25
case to heatsink
Approximate weight						6					g
						0.21					oz.
Mounting torque	minimum					6 (5)				kgf · cm
										(lbf · in)
	maximum					12 (10)
Marking device				Case style TO-247AC			63CPT100

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94535
2		Revision: 07-Oct-08

63CPT100

High Performance Vishay High Power Products

Schottky Generation 5.0,

2 x 30 A

		1000
<![if ! IE]> <![endif]>InstantaneousForward	<![if ! IE]> <![endif]>Current (A)	100	TJ = 175 °C
						TJ = 25 °C
							TJ	= 125 °C
		10
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>I
		1
		0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6

	100	175 °C
<![if ! IE]> <![endif]>(mA)	10		150 °C
			125 °C
<![if ! IE]> <![endif]>Current
	1		100 °C
			75 °C
<![if ! IE]> <![endif]>- Reverse
	0.1
			50 °C
	0.01
<![if ! IE]> <![endif]>R
<![if ! IE]> <![endif]>I			25 °C
	0.001
	0	20	40	60	80	100

VFM - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

	10 000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>- Junction Capacitance	1000
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>C
	100				80	100
	0	20	40	60
		VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
	1
<![if ! IE]> <![endif]>thJC
<![if ! IE]> <![endif]>Z
<![if ! IE]> <![endif]>Impedance	0.1
				D = 0.75
				D = 0.50
		Single pulse		D = 0.33
<![if ! IE]> <![endif]>Thermal	0.01
		(Thermal resistance)		D = 0.25
				D = 0.20
	0.001
	0.00001	0.0001	0.001	0.01	0.1	1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94535	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 07-Oct-08		3