Vishay 63CPQ100GPBF Data Sheet

TO-247AC
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2 x 30 A
1 3
Anode
1
Base
common
cathode
2
2
Common
cathode
2 x 30 A
100 V
Anode
2
• 175 °C TJ operation
• Center tap TO-247 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 63CPQ100GPbF center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
63CPQ100GPbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 60 A
100 V
tp = 5 µs sine 2200 A
30 Apk, TJ = 125 °C (per leg) 0.64 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 63CPQ100GPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 60
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 153 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 410
TJ = 25 °C, IAS = 1 A, L = 30 mH 15 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
30
2200
A
1A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94243 For technical questions, contact: diodes-tech@vishay.com Revision: 13-Aug-08 1
www.vishay.com
63CPQ100GPbF
Vishay High Power Products
Schottky Rectifier, 2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
30 A
Maximum forward voltage drop per leg See fig. 1
V
FM
60 A 0.92
(1)
30 A
60 A 0.76
Maximum reverse leakage current per leg See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 25
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1300 pF
T
Measured lead to lead 5 mm from package body 7.5 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.77
0.64
0.3
0.38 V
5.75 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 63CPQ100G
T
, T
J
Stg
DC operation See fig. 4
R
thJC
- 55 to 175 °C
0.8
DC operation 0.4
R
thCS
Mounting surface, smooth and greased 0.25
6g
0.21 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94243
2 Revision: 13-Aug-08
63CPQ100GPbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0
V
Schottky Rectifier, 2 x 30 A
TJ = 175 °C T
= 125 °C
J
T
= 25 °C
J
0.3 0.6 0.9 1.2
- Forward Voltage Drop (V)
FM
1.5
- Reverse Current (mA)
R
I
Vishay High Power Products
1000
10
0.1
1
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0
20 40 60
V
- Reverse Voltage (V)
R
80
100
0.01
0.001
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
100
1000
- Junction Capacitance (pF)
T
C
100
0
TJ = 25 °C
4020 60 80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.50 D = 0.33 D = 0.25 D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
120
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
100 10
Document Number: 94243 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 13-Aug-08 3
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