Vishay 40MT120UHAPbF, 40MT120UHTAPbF Data Sheet

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

temperature coefficient

CE(on)

®

antiparallel diodes with ultrasoft reverse

F

MTP

•Positive V

• 10 μs short circuit capability

• Square RBSOA

•HEXFRED recovery and low V

•Al2O3 DBC

• Optional SMD thermistor (NTC)

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 3.36 V

V

CE(on)

at TC = 25 °C 80 A

I

C

1200 V

• Optimized for welding, UPS and SMPS applications

• Rugged with ultrafast performance

• Benchmark efficiency above 20 kHz

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation (only IGBT) P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 80

= 104 °C 40

T

C

TC = 105 °C 21

Any terminal to case, t = 1 min 2500

TC = 25 °C 463

T

= 100 °C 185

C

1200 V

160

± 20

A

V

W

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94507 For technical questions, contact: indmodules@vishay.com Revision: 01-Mar-10 1

www.vishay.com

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage

Temperature coefficient of breakdown voltage

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage

Transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

ΔV

V

(BR)CES

VGE = 0 V, IC = 250 μA 1200 - - V

/ΔTJVGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.1 - V/°C

VGE = 15 V, IC = 40 A - 3.36 3.59

= 15 V, IC = 80 A - 4.53 4.91

V

GE

= 15 V, IC = 40 A, TJ = 150 °C - 3.88 4.10

V

GE

= 15 V, IC = 80 A, TJ = 150 °C - 5.35 5.68

V

GE

VCE = VGE, IC = 500 μA 4 - 6

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

J

VCE = 50 V, IC = 40 A, PW = 80 μs - 35 - S

VGE = 0 V, V

= 0 V, V

V

GE

V

= 0 V, V

GE

= 1200 V, TJ = 25 °C - - 250 μA

CE

= 1200 V, TJ = 125 °C - 0.4 1.0

CE

= 1200 V, TJ = 150 °C - 0.2 10

CE

VGE = ± 20 V - - ± 250 nA

V

CE(on)

GE(th)

/ΔT

fe

CES

GES

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

on

off

tot

on

off

tot

ies

oes

res

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

IC = 40 A

= 600 V

V

CC

= 15 V

V

GE

VCC = 600 V, IC = 40 A, VGE = 15 V,

= 5 Ω, L = 200 μH, TJ = 25 °C,

R

g

energy losses include tail and diode reverse recovery

VCC = 600 V, IC = 40 A, VGE = 15 V, R

= 5 Ω, L = 200 μH, TJ = 125 °C,

g

energy losses include tail and diode reverse recovery

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 160 A

T

J

= 1000 V, Vp = 1200 V

V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

T

= 150 °C,

J

= 900 V, Vp = 1200 V

V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

- 399 599

-4365

nCGate to emitter charge (turn-on) Q

- 187 281

- 1.14 1.71

- 1.35 2.02

- 2.49 3.73

- 1.60 2.40

mJ

- 1.62 2.43

- 3.22 4.82

- 5521 8282

- 380 570

pFOutput capacitance C

- 171 257

Fullsquare

10 - - μs

www.vishay.com For technical questions, contact: indmodules@vishay.com

Document Number: 94507

2 Revision: 01-Mar-10

40MT120UHAPbF, 40MT120UHTAPbF

"Half Bridge" IGBT MTP

Vishay High Power Products

(Ultrafast NPT IGBT), 80 A

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IC = 40 A - 2.98 3.38

= 80 A - 3.90 4.41

I

C

= 40 A, TJ = 125 °C - 3.08 3.39

Diode forward voltage drop V

Reverse recovery energy of the diode E

FM

rec

Diode reverse recovery time t

Peak reverse recovery current I

THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R

Sensitivity index of the thermistor material

Notes

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

-------

R

1

⎛⎞

β

exp=

------

⎝⎠

T

1

–

, temperature in Kelvin

------

T

0

1

0

(1)(2)

β

I

C

= 80 A, TJ = 125 °C - 4.29 4.72

I

C

= 40 A, TJ = 150 °C - 3.12 3.42

I

C

VGE = 15 V, Rg = 5 Ω, L = 200 μH

= 600 V, IC = 40 A

V

rr

(1)

CC

T

= 125 °C

J

T0 = 25 °C - 30 - kΩ

T0 = 25 °C T

= 85 °C

1

- 574 861 μJ

- 120 180 ns

-4365A

- 4000 - K

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Clearance

Creepage

(1)

(2)

R

J

Stg

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

External shortest distance in air between 2 terminals 5.5 - -

Shortest distance along external surface of the insulating material between 2 terminals

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads.

Weight 66 g

- 40 - 150

- 40 - 125

- - 0.29

8- -

3 ± 10 % Nm

°C

°C/WDiode - - 0.61

mm

Document Number: 94507 For technical questions, contact: indmodules@vishay.com

www.vishay.com

Revision: 01-Mar-10 3

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Ultrafast NPT IGBT), 80 A

100

80

60

) A

(

C

I

40

20

0

0 20406080100120140160

TC(°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

600

500

400

) W

(

300

D

P

200

100

0

0 20406080100120140160

TC(°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

) A

(

C

I

10

1

10 100 1000 10 000

V

(V)

CE

Fig. 4 - Reverse BIAS SOA

= 150 °C; VGE = 15 V

T

J

160

VGE = 18V

140

VGE = 1 5V VGE = 1 2V

120

VGE = 1 0V VGE = 8.0V

100

) A

(

80

E C

I

60

40

20

0

0246810

V

(V)

CE

Fig. 5 - Typical IGBT Output Characteristics

T

= - 40 °C; tp = 80 μs

J

1000

100

10

) A

(

C

I

1

0.1

0.01 1 10 100 1000 10000

V

(V)

CE

Fig. 3 - Forward SOA

T

= 25 °C; TJ ≤ 150 °C

C

10 μs

100 μs

10ms

DC

160

VGE = 18V

140

VGE = 15V VGE = 12V

120

VGE = 10V VGE = 8.0V

100

) A

(

80

E C

I

60

40

20

0

0246810

V

(V)

CE

Fig. 6 - Typical IGBT Output Characteristics

T

= 25 °C; tp = 80 μs

J

www.vishay.com For technical questions, contact: indmodules@vishay.com

Document Number: 94507

4 Revision: 01-Mar-10