Vishay 40EPS16PbF High Voltage Series Data Sheet

40EPS16PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 40 A

DESCRIPTION/FEATURES

TO-247AC modified

PRODUCT SUMMARY

VF at 20 A 1 V

I

FSM

V

RRM

cathode

1 3

Cathode

Base

2

Anode

475 A

1600 V

The 40EPS16PbF rectifier High Voltage Series
has been optimized for very low forward
voltage drop, with moderate leakage. The
glass passivation technology used has reliable
operation up to 150° C junction temperature.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in identical
package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 40 A

1600 V

475 A

20 A, TJ = 25 °C 1.0 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

40EPS16PbF 1600 1700 1

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

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Revision: 23-Apr-08 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A2√s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 40

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 475

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1131

applied 400

RRM

applied 800

RRM

A

2

A

s

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40EPS16PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 40 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

40 A, TJ = 25 °C 1.14 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

RRM

7.6 mΩ

0.72 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-247AC modified (JEDEC) 40EPS16

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

DC operation 0.6

R

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm
(lbf · in)

mA

°C/W

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2 Revision: 23-Apr-08

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40EPS16PbF High Voltage Series

150

145

140

135

130

125

120

115

Temperature (°C)

110

105

Maximum Allowable Case

100

95

0

Fig. 1 - Current Rating Characteristics

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

0

Fig. 2 - Current Rating Characteristics

40EPS16
R

(DC) = 0.6 K/W

thJC

Conduction angle

30°

60°

90°

120°

Average Forward Current (A)

40EPS16

(DC) = 0.6 K/W

R

thJC

Conduction period

30°

60°

90°

120°

180°

10 20

Average Forward Current (A)

304050

Input Rectifier Diode, 40 A

Ø

180°

45354030252015105

Ø

DC

60

70

Power Loss (W)

Maximum Average Forward

Instantaneous Forward Current (A)

Vishay High Power Products

80

DC

180°

70

120°

60

90°
60°

50

30°

40

30

20

10

0

0

10 20

Average Forward Current (A)

40EPS16
T

J

304050

Fig. 4 - Forward Power Loss Characteristics

1000

100

TJ = 25 °C

10

1

0.5

Instantaneous Forward Voltage (V)

TJ = 150 °C

1.5

Fig. 5 - Forward Voltage Drop Chacteristics

RMS limit

Ø

Conduction period

= 150 °C

40EPS16

2.5

60

70

60

55

50

45

40

35

30

25

20

Power Loss (W)

15

10

Maximum Average Forward

5

0

180°
120°

90°
60°
30°

0

1051520

Average Forward Current (A)

RMS limit

Ø

Conduction angle

40EPS16

= 150 °C

T

J

25 30 35

Fig. 3 - Forward Power Loss Characteristics

40

500

450

400

350

300

250

200

Forward Current (A)

Peak Half Sine Wave

150

100

0.01 0.1

Maximum non-repetitive surge current

40EPS16

versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

reapplied

RRM

1

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Revision: 23-Apr-08 3

40EPS16PbF High Voltage Series

Vishay High Power Products

1

0.1

Single pulse

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.001 0.01 0.1 1

Fig. 7 - Thermal Impedance Z

ORDERING INFORMATION TABLE

Device code

40 E P S 16 PbF

Input Rectifier Diode, 40 A

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

Steady state value
(DC operation)

40EPS16

51324

6

1 - Current rating (40 = 40 A)

2 - Circuit configuration:

E = Single diode

3 - Package:

P = TO-247AC modified

4 - Type of silicon:

S = Standard recovery rectifier

5 - Voltage rating (16 = 1600 V)

6 -

None = Standard production

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95253

Part marking information http://www.vishay.com/doc?95255

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4 Revision: 23-Apr-08

Document Number: 94344

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DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

(2) R/2

Q

2 x R

(2)

(5) L1

2 x b2

0.10 AC

Planting

(3)

B

C

3 x b

M M

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

N

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

ΦP

M M

Ø K BD

D2

Thermal pad

Lead assignments

Diodes

1. - Anode/open

C

C

2. - Cathode

3. - Anode

(Datum B)

ΦP1

D1 (4)

4

(4)

E1

View A - A

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216

D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 21-Jun-11

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1

, [e-mail], [e-mail]

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