Vishay 40EPS16PbF High Voltage Series Data Sheet
40EPS16PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
Base cathode
2
TO-247AC modified |
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Cathode |
Anode |
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PRODUCT SUMMARY
VF at 20 A |
1 V |
IFSM |
475 A |
VRRM |
1600 V |
DESCRIPTION/FEATURES |
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The 40EPS16PbF rectifier High Voltage Series |
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has been optimized for very low forward |
Pb-free |
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voltage drop, with moderate leakage. The |
Available |
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RoHS* |
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glass passivation technology used has reliable |
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operation up to 150° C junction temperature. |
COMPLIANT |
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Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
Sinusoidal waveform |
40 |
A |
VRRM |
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1600 |
V |
IFSM |
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475 |
A |
VF |
20 A, TJ = 25 °C |
1.0 |
V |
TJ |
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- 40 to 150 |
°C |
VOLTAGE RATINGS
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VRRM, MAXIMUM |
VRSM, MAXIMUM NON-REPETITIVE |
IRRM |
PART NUMBER |
PEAK REVERSE VOLTAGE |
PEAK REVERSE VOLTAGE |
AT 150 °C |
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V |
V |
mA |
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40EPS16PbF |
1600 |
1700 |
1 |
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ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
TC = 105 °C, 180° conduction half sine wave |
40 |
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Maximum peak one cycle |
IFSM |
10 ms sine pulse, rated VRRM applied |
400 |
A |
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non-repetitive surge current |
10 ms sine pulse, no voltage reapplied |
475 |
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Maximum I2t for fusing |
I2t |
10 ms sine pulse, rated VRRM applied |
800 |
A2s |
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10 ms sine pulse, no voltage reapplied |
1131 |
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Maximum I2√t for fusing |
I2√t |
t = 0.1 to 10 ms, no voltage reapplied |
11 310 |
A2√s |
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94344 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 23-Apr-08 |
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1 |
40EPS16PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VALUES |
UNITS |
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Maximum forward voltage drop |
VFM |
40 A, TJ = 25 °C |
1.14 |
V |
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Forward slope resistance |
rt |
TJ |
= 150 °C |
7.6 |
mΩ |
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Threshold voltage |
VF(TO) |
0.72 |
V |
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Maximum reverse leakage current |
IRM |
TJ |
= 25 °C |
VR = Rated VRRM |
0.1 |
mA |
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TJ |
= 150 °C |
1.0 |
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum junction and storage |
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TJ, TStg |
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- 40 to 150 |
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°C |
temperature range |
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Maximum thermal resistance, |
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RthJC |
DC operation |
0.6 |
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junction to case |
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Maximum thermal resistance, |
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RthJA |
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40 |
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°C/W |
junction to ambient |
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Typical thermal resistance, |
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RthCS |
Mounting surface, flat, smooth and greased |
0.2 |
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case to heatsink |
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Approximate weight |
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6 |
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g |
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0.21 |
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oz. |
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Mounting torque |
minimum |
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6 (5) |
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kgf · cm |
maximum |
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12 (10) |
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(lbf · in) |
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Marking device |
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Case style TO-247AC modified (JEDEC) |
40EPS16 |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 94344 |
2 |
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Revision: 23-Apr-08 |
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