Vishay 40EPS16PbF High Voltage Series Data Sheet

40EPS16PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
TO-247AC modified
PRODUCT SUMMARY
VF at 20 A 1 V
I
FSM
V
RRM
cathode
1 3
Cathode
Base
2
Anode
475 A
1600 V
The 40EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 40 A
1600 V
475 A
20 A, TJ = 25 °C 1.0 V
- 40 to 150 °C
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM
V
RRM
PART NUMBER
40EPS16PbF 1600 1700 1
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94344 For technical questions, contact: diodes-tech@vishay.com Revision: 23-Apr-08 1
2
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A2√s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 40
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 475
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1131
applied 400
RRM
applied 800
RRM
A
2
A
s
www.vishay.com
40EPS16PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
40 A, TJ = 25 °C 1.14 V
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
7.6 mΩ
0.72 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) 40EPS16
minimum 6 (5)
maximum 12 (10)
T
, T
J
Stg
DC operation 0.6
R
thJC
40
R
thJA
R
thCS
Mounting surface, flat, smooth and greased 0.2
- 40 to 150 °C
6g
0.21 oz.
kgf · cm (lbf · in)
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 2 Revision: 23-Apr-08
Document Number: 94344
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