TO-247AC modified
PRODUCT SUMMARY
VF at 10 A < 1 V
t
rr
V
RRM
40EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 40 A
Base
cathode
2
1
Cathode
60 ns
200 to 600 V
3
Anode
Vishay High Power Products
FEATURES/DESCRIPTION
The 40EPF..PbF fast soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power cycling
conditions.
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
Pb -free
Av ailab le
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 40 A
200 to 600 V
475 A
10 A, TJ = 25 °C 1 V
1 A, - 100 A/µs 60 ns
- 40 to 150 °C
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
40EPF02PbF 200 300
40EPF06PbF 600 700
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
7 40EPF04PbF 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 11 310 A 2√ s
F(AV)
I
FSM
TC = 105 °C, 180° conduction half sine wave 40
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 475
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1131
applied 400
RRM
applied 800
RRM
A
2
A
s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94102 For technical questions, contact: diodes-tech@vishay.com
Revision: 14-Apr-08 1
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40EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
FM
t
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
Reverse recovery charge Q
rr
rr
rr
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC) 40EPF06
T
, T
J
R
thJC
R
thJA
R
thCS
40 A, TJ = 25 °C 1.25 V
4.4 mΩ
1.1 V
0.1
- 40 to 150 °C
Stg
TJ = 125 °C
TJ = 25 °C
T
= 150 °C 7.0
J
IF at 40 Apk
25 A/µs
25 °C
V
= Rated V
R
180 ns
3.2 A
0.5 µC
RRM
DC operation 0.6
40
Mounting surface, smooth and greased 0.2
6g
0.21 oz.
I
FM
t
rr
dir
dt
kgf · cm
(lbf · in)
mA
I
RM(REC)
°C/W
t
Q
rr
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
90
40EPF.. Series
R
30°
15
5
0
10 45
20
Average Forward Current (A)
(DC) = 0.6 K/W
thJC
Condu ction angle
60°
90°
25
120°
35
Ø
18 0°
40 30
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
90
40EPF.. Series
(DC) = 0.6 K/W
R
thJC
Ø
Condu ction period
30°
90°
120°
60°
10 20
03 0
18 0°
50
Average Forward Current (A)
DC
60 40
70
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
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Document Number: 94102
2 Revision: 14-Apr-08
40EPF..PbF Soft Recovery Series
60
50
40
30
20
Power Loss (W)
Maximum Average Forward
Maximum Average Forward
10
8 0
70
60
50
40
30
Power Loss (W)
20
10
18 0°
120°
90°
60°
30°
Condu ction angle
0
0
10 15 5
20
RMS limit
Ø
40EPF.. Series
= 150 °C
T
J
25
30
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
18 0°
120°
90°
60°
30°
RMS limit
Ø
Condu ction period
40EPF.. Series
T
= 150 °C
0
0
10 30
20
J
50
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Fast Soft Recovery
Rectifier Diode, 40 A
35
40
DC
60 40
70
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
Vishay High Power Products
At any rated load condition and w ith
rated V
40EPF.. Series
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximu m non-repetitiv e su rge cu rrent
v ersu s pu lse train du ration.
40EPF.. Series
0.01 0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
applied follow ing su rge.
RRM
Initial TJ = 150 °C
at 60 Hz 0.008 3 s
at 50 Hz 0.0100 s
Initial TJ = 150 °C
N o v oltage reapplied
Rated V
RRM
reapplied
1
1000
100
TJ = 25 °C
= 150 °C
T
10
Instantaneous Forward Current (A)
1
024
J
40EPF.. Series
5
6 13
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 94102 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Apr-08 3
40EPF..PbF Soft Recovery Series
Vishay High Power Products
225
200
175
- Maximum Reverse
rr
t
Recovery Time (µs)
150
125
100
75
40EPF.. Series
50
T
J
25
0 40 120 200
IFM = 10 A
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
- Maximum Reverse
rr
t
Recovery Time (µs)
0.8
0.6
0.4
0.2
40EPF.. Series
= 150 °C
T
J
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 5 A
IFM = 1 A
8 0
Fast Soft Recovery
Rectifier Diode, 40 A
160
IFM = 80 A
I
= 40 A
FM
I
= 20 A
FM
I
= 10 A
FM
= 5 A
I
FM
= 1 A
I
FM
10
40EPF.. Series
= 150 °C
T
- Maximum Reverse
rr
Q
Recovery Charge (µC)
J
8
6
4
2
0
0
40
IFM = 80 A
IFM = 1 A
8 0 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
25
40EPF.. Series
= 25 °C
T
J
- Maximum Reverse
Recovery Current (A)
rr
I
20
15
10
5
IFM = 80 A
IFM = 40 A
IFM = 10 A
IFM = 20 A
IFM = 10 A
IFM = 20 A
IFM = 5 A
J
IFM = 40 A
IFM = 5 A
IFM = 1 A
= 150 °C
0
40
0 8 0 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
4
40EPF.. Series
= 25 °C
T
J
3
2
- Maximum Reverse
rr
Q
Recovery Charge (µC)
1
0
40
0 8 0 120 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
IFM = 8 0 A
IFM = 40 A
= 150 °C
J
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
160
J
= 25 °C
- Maximum Reverse
rr
I
0
40
0 8 0 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
50
40EPF.. Series
= 150 °C
T
J
40
IFM = 80 A
= 40 A
I
FM
= 20 A
I
30
20
Recovery Current (A)
10
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
0
0 40 120 160 200
8 0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
= 25 °C
J
= 150 °C
J
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Document Number: 94102
4 Revision: 14-Apr-08
40EPF..PbF Soft Recovery Series
1
0.1
Single pu lse
0.01
- Transient Thermal Impedance (K/W)
0.0001 0.001 0.01 0.1
thJC
Z
ORDERING INFORMATION TABLE
Device code
40 E P F 06 PbF
Fast Soft Recovery
Rectifier Diode, 40 A
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
Vishay High Power Products
Characteristics
thJC
Steady state v alu e
(DC operation)
40EPF.. Series
1
1
3 24
5
6
1 - Current rating (40 = 40 A)
- Circuit configuration:
2
E = Single diode
3 - Package:
P = TO-247AC modified
4 - Type of silicon:
F = Fast diode
5 - Voltage code x 100 = V
- None = Standard production
6
RRM
02 = 200 V
04 = 400 V
06 = 600 V
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95001
Part marking information http://www.vishay.com/doc?95006
SPICE model http://www.vishay.com/doc?95274
Document Number: 94102 For technical questions, contact: diodes-tech@vishay.com
Revision: 14-Apr-08 5
www.vishay.com
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
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Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1