Vishay 31DQ09, 31DQ10 Data Sheet
C-16
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
31DQ09, 31DQ10
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
3.3 A
90/100 V
DESCRIPTION
The 31DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 3.3 A
90/100 V
tp = 5 µs sine 210 A
3 Apk, TJ = 25 °C 0.85 V
- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 31DQ09 31DQ10 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
90 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 108 °C, rectangular waveform 3.3
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 34
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
= 1 A, L = 6 mH 3.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
210
0.5 A
A
Document Number: 93321 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Nov-08 1
www.vishay.com
31DQ09, 31DQ10
Vishay High Power Products
Schottky Rectifier, 3.3 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop
See fig. 1
V
FM
6 A 0.97
(1)
3 A
6 A 0.80
Maximum reverse leakage current
See fig. 4
I
RM
Typical junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 3
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 110 pF
Measured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.85
0.69
1
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device Case style C-16
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation 15
- 40 to 150 °C
80
1.2 g
0.042 oz.
31DQ09
31DQ10
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93321
2 Revision: 06-Nov-08
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