Vishay 30ETH06-1PbF User Manual

30ETH06SPbF/30ETH06-1PbF

Hyperfast Rectifier,

30 A FRED Pt

TM

Vishay High Power Products

30ETH06SPbF

30ETH06-1PbF

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 125 °C operating junction temperature

Base

cathode

• Dual diode center tap

• Lead (Pb)-free (“PbF” suffix)

2

2

• Designed and qualified for Q101 level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

2

PAK

3

Anode

1

N/C

D

PRODUCT SUMMARY

trr (typical) 28 ns

I

F(AV)

V

R

1
N/C

TO-262

30 A

600 V

3

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

RRM

F(AV)

FSM

, T

J

TC = 103 °C 30

TJ = 25 °C 200

Stg

600 V

A

- 65 to 175 °C

Available

RoHS*

COMPLIANT

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94020 For technical questions, contact: [e-mail]
Revision: 26-May-08 1

,

V

BR

V

R

IR = 100 µA 600 - -

R

IF = 30 A - 2.0 2.6

F

I

= 30 A, TJ = 150 °C - 1.34 1.75

F

VR = VR rated - 0.3 50

T

= 150 °C, VR = VR rated - 60 500

J

VR = 600 V - 33 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

µA

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30ETH06SPbF/30ETH06-1PbF

Vishay High Power Products

Hyperfast Rectifier,

30 A FRED Pt

TM

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 77 -

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.7 -

J

= 30 A

I

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

TJ = 25 °C - 65 -

rr

T

= 125 °C - 345 -

J

-31-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

T

, T

J

Stg

R

-0.71.1

thJC

R

thJA

R

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and greased - 0.2 -

- 65 - 175 °C

-2.0- g

-0.07- oz.

Case style D

6.0

(5.0)

2

PAK 30ETH06S

-

Case style TO-262 30ETH06-1

12

(10)

kgf · cm

(lbf · in)

nsT

A

nC

°C/W

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Document Number: 94020

2 Revision: 26-May-08

30ETH06SPbF/30ETH06-1PbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0 3.51.5

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

0.5 2 3

1

2.5

VF - Forward Voltage Drop (V)

Hyperfast Rectifier,

30 A FRED Pt

TM

- Reverse Current (µA)

R

I

Vishay High Power Products

1000

100

10

1

0.1

0.01

0.001

0.0001
100

0 200 400

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

300

VR - Reverse Voltage (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

600500

100

- Junction Capacitance (pF)

T

C

10

0 200 400 500 600

TJ = 25 °C

300100

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

0.1

0.01

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

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Revision: 26-May-08 3

30ETH06SPbF/30ETH06-1PbF

Vishay High Power Products

180

160

140

120

Square wave (D = 0.50)

applied

Rated V

R

100

Allowable Case Temperature (°C)

See note (1)

80

0 5 10 15 20 25

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

90

80

70

60

50

40

30

20

Average Power Loss (W)

10

0

0

0 1020304045

I

DC

5 152535

- Average Forward Current (A)

F(AV)

Fig. 6 - Forward Power Loss Characteristics

DC

30 35 40 45

RMS limit

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

Hyperfast Rectifier,

30 A FRED Pt

TM

(ns)
t

(nC)
Q

rr

rr

90

80

70

60

50

40

30

20

VR = 200 V

= 125 °C

T

J

10

= 25 °C

T

J

0

100 1000

IF = 30 A

= 15 A

I

F

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

1200

VR = 200 V

= 125 °C

T

1000

J

= 25 °C

T

J

800

600

400

200

IF = 30 A

= 15 A

I

F

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

F(AV)

) x R

REV

x VFM at (I

thJC

;

F(AV)

/D) (see fig. 6);

R

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Document Number: 94020

4 Revision: 26-May-08

30ETH06SPbF/30ETH06-1PbF

Hyperfast Rectifier,

30 A FRED Pt

L = 70 µH

dIF/dt

adjust

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

dIF/dt

RRM

G

TM

Vishay High Power Products

V

= 200 V

R

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

Document Number: 94020 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 26-May-08 5

30ETH06SPbF/30ETH06-1PbF

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

30 E T H 06 S TRL PbF

1 - Current rating (30 = 30 A)

2 - E = Single diode

3 - T = TO-220, D

4 - H = Hyperfast recovery

5 - Voltage rating (06 = 600 V)

6 -

7 -

8 -

Hyperfast Rectifier,

30 A FRED Pt

2

PAK

S = D2PAK

-1 = TO-262

None = Tube (50 pieces)

TRL = Tape and reel (left oriented, for D

TRR = Tape and reel (right oriented, for D2PAK package)

None = Standard production

PbF = Lead (Pb)-free

TM

51324678

2

PAK package)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95014

Part marking information http://www.vishay.com/doc?95008

Packaging information http://www.vishay.com/doc?95032

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 26-May-08

Document Number: 94020

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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Revision: 12-Mar-07 1