Vishay 30ETH06-1PbF User Manual
30ETH06SPbF/30ETH06-1PbF
Hyperfast Rectifier,
30 A FRED Pt
TM
Vishay High Power Products
30ETH06SPbF
30ETH06-1PbF
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
Base
cathode
• Dual diode center tap
• Lead (Pb)-free (“PbF” suffix)
2
2
• Designed and qualified for Q101 level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
2
PAK
3
Anode
1
N/C
D
PRODUCT SUMMARY
trr (typical) 28 ns
I
F(AV)
V
R
1
N/C
TO-262
30 A
600 V
3
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
RRM
F(AV)
FSM
, T
J
TC = 103 °C 30
TJ = 25 °C 200
Stg
600 V
A
- 65 to 175 °C
Available
RoHS*
COMPLIANT
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94020 For technical questions, contact: diodes-tech@vishay.com
Revision: 26-May-08 1
,
V
BR
V
R
IR = 100 µA 600 - -
R
IF = 30 A - 2.0 2.6
F
I
= 30 A, TJ = 150 °C - 1.34 1.75
F
VR = VR rated - 0.3 50
T
= 150 °C, VR = VR rated - 60 500
J
VR = 600 V - 33 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
µA
www.vishay.com
30ETH06SPbF/30ETH06-1PbF
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V - 28 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 77 -
J
TJ = 25 °C - 3.5 -
T
= 125 °C - 7.7 -
J
= 30 A
I
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
TJ = 25 °C - 65 -
rr
T
= 125 °C - 345 -
J
-31-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
R
-0.71.1
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and greased - 0.2 -
- 65 - 175 °C
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 30ETH06S
-
Case style TO-262 30ETH06-1
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94020
2 Revision: 26-May-08
30ETH06SPbF/30ETH06-1PbF
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
0 3.51.5
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.5 2 3
1
2.5
VF - Forward Voltage Drop (V)
Hyperfast Rectifier,
30 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0.0001
100
0 200 400
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
600500
100
- Junction Capacitance (pF)
T
C
10
0 200 400 500 600
TJ = 25 °C
300100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94020 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 26-May-08 3
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