Vishay 30ETH06, 30ETH06S, 30ETH06-1 Data Sheet

Bulletin PD-20748 rev. D 08/01

30ETH06

30ETH06S 30ETH06-1

Hyperfast Rectifier

Features
				trr = 28ns typ.
•	Hyperfastfast Recovery Time
•	Low Forward Voltage Drop			IF(AV) = 30Amp
•	Low Leakage Current
• 175°C Operating Junction Temperature				VR = 600V
• Dual Diode Center Tap
Description/ Applications
State of		the art Hyperfast recovery rectifiers	designed with optimized performance of forward voltage drop,
Hyperfast		recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

Absolute Maximum Ratings

	Parameters		Max		Units
VRRM	Peak Repetitive Reverse Voltage		600		V
IF(AV)	Average Rectifier Forward Current	@ TC = 103°C	30		A
IFSM	Non Repetitive Peak Surge Current	@ TJ = 25°C	200
TJ, TSTG	Operating Junction and Storage Temperatures		- 65 to 175		°C
		Case Styles
	30ETH06	30ETH06S		30ETH06-1

	Base	Base			2
	Cathode	Cathode
		2
1	3	1	3	1	3

Cathode	Anode	N/C	Anode	N/C	Anode
TO-220AC			D2PAK		TO-262
www.irf.com					1

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

	Parameters	Min	Typ	Max	Units	Test Conditions
VBR, Vr	Breakdown Voltage,	600	-	-	V	IR = 100µA
	Blocking Voltage
VF	Forward Voltage	-	2.0	2.6	V	IF = 30A, TJ = 25°C
		-	1.34	1.75	V	IF = 30A, TJ = 150°C
IR	Reverse Leakage Current	-	0.3	50	µA	VR = VR Rated
		-	60	500	µA	TJ = 150°C, VR = VR Rated
CT	Junction Capacitance	-	33	-	pF	VR = 600V
LS	Series Inductance	-	8.0	-	nH	Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

		Parameters	Min	Typ	Max	Units	Test Conditions
	trr	Reverse Recovery Time	-	28	35	ns	IF = 1.0A, diF/dt = 50A/µs, VR = 30V
			-	31	-		TJ = 25°C	IF = 30A
				77	-		TJ = 125°C	VR = 200V
								diF /dt = 200A/µs
	IRRM	Peak Recovery Current	-	3.5	-	A	TJ = 25°C
			-	7.7	-		TJ = 125°C
	Qrr	Reverse Recovery Charge	-	65	-	nC	TJ = 25°C
			-	345	-		TJ = 125°C

Thermal - Mechanical Characteristics

	Parameters		Min	Typ	Max	Units
TJ	Max. Junction Temperature Range		- 65	-	175	°C
TStg	Max. Storage Temperature Range		- 65	-	175
RthJC	Thermal Resistance, Junction to Case	Per Leg	-	0.7	1.1	°C/W
RthJA !	Thermal Resistance, Junction to Ambient	Per Leg	-	-	70
RthCS"	Thermal Resistance, Case to Heatsink		-	0.2	-
Wt	Weight		-	2.0	-	g
			-	0.07	-	(oz)
	Mounting Torque		6.0	-	12	Kg-cm
			5.0	-	10	lbf.in

! Typical Socket Mount

"#Mounting Surface, Flat, Smooth and Greased

2 www.irf.com

										30ETH06, 30ETH06S, 30ETH06-1
											Bulletin PD-20748			rev. D 08/01
	1000									1000			Tj = 175˚C
									<![if ! IE]> <![endif]>(µA)	100				150˚C
										10				125˚C
									<![if ! IE]> <![endif]>R
									<![if ! IE]> <![endif]>- I	1				100˚C
									<![if ! IE]> <![endif]>Current
F100										0.1
									<![if ! IE]> <![endif]>Reverse					25˚C
<![if ! IE]> <![endif]>(A)										0.01
<![if ! IE]> <![endif]>- I										0.001
<![if ! IE]> <![endif]>Current										0	100	200	300	400	500	600
<![if ! IE]> <![endif]>Forward									0.0001
											Vs. Reverse Voltage
											Reverse Voltage - VR				(V)
<![if ! IE]> <![endif]>Instantaneous										Fig. 2 - Typical Values Of Reverse Current
						J			<![if ! IE]> <![endif]>C-	1000
						T J = 175˚C			<![if ! IE]> <![endif]>(pF)		T J= 25˚C
	10
						T	= 150˚C		<![if ! IE]> <![endif]>T
									<![if ! IE]> <![endif]>CapacitanceJunction
						T	= 25˚C
						J				100
	1									10
	0	0.5	1	1.5	2	2.5	3	3.5		0	100	200	300	400	500	600
			Forward Voltage Drop - VFM (V)								Reverse Voltage - VR (V)
	Fig.1 -Typical Forward Voltage Drop Characteristics									Fig.3-Typical Junction Capacitance
												Vs. Reverse Voltage

	10
<![if ! IE]> <![endif]>(°C/W)	1	D = 0.50
<![if ! IE]> <![endif]>thJC		D = 0.20
<![if ! IE]> <![endif]>Z		D = 0.10				PDM
<![if ! IE]> <![endif]>Impedance	0.1	D = 0.05
		D = 0.02					t1
		D = 0.01
							t 2
<![if ! IE]> <![endif]>Thermal	0.01		Single Pulse			Notes:
			(Thermal Resistance)			1. Duty factor D =	t1/ t2
						2. Peak Tj = Pdm x ZthJC + Tc
0.001
	0.00001		0.0001	0.001	0.01	0.1	1	10

t1, Rectangular Pulse Duration (Seconds)

Fig.4 - Max. Thermal Impedance ZthJC Characteristics

www.irf.com

3