VISHAY 30EPH06 VIS Datasheet

Page 1
www.vishay.com
Base
common
cathode
2
13
Cathode Anode
TO-247AC modified
VS-30EPH06PbF, VS-30EPH06-N3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
at I
V
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Single die
30 A
600 V
2.6 V
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single diode device
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Revision: 12-Aug-11
RRM
F(AV)
FSM
, T
J
Stg
,
V
BR
V
R
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR = 100 μA 600 - -
R
IF = 30 A - 2.0 2.6
F
I
= 30 A, TJ = 150 °C - 1.34 1.75
F
VR = VR rated - 0.3 50
T
= 150 °C, VR = VR rated - 60 500
J
VR = 600 V - 33 - pF
T
Measured lead to lead 5 mm from package body - 3.5 - nH
S
TC = 116 °C 30
TJ = 25 °C 300
1
600 V
A
- 65 to 175 °C
Document Number: 94018
V
μA
Page 2
VS-30EPH06PbF, VS-30EPH06-N3
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
= 125 °C - 77 -
T
J
TJ = 25 °C - 3.5 -
T
= 125 °C - 7.7 -
J
= 30 A
I
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
TJ = 25 °C - 65 -
T
= 125 °C - 345 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified 30EPH06
T
, T
J
Stg
R
-0.50.9
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and greased
Vishay Semiconductors
-31-
- 65 - 175 °C
-0.4-
-6.0- g
-0.22- oz.
6.0
(5.0)
-
12
(10)
nsT
A
nC
°C/W
kgf · cm
(lbf · in)
Revision: 12-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
Document Number: 94018
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 3
www.vishay.com
100
1000
0 200 400 500 600
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
TJ = 25 °C
VS-30EPH06PbF, VS-30EPH06-N3
Vishay Semiconductors
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0 3.51.5
0.5 2 3
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
1
2.5
VF - Forward Voltage Drop (V)
1000
100
10
1
0.1
0.01
- Reverse Current (µA)
R
I
0.001
0.0001 0 200 400
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
100
300
VR - Reverse Voltage (V)
TJ = 25 °C
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
600500
- Thermal Impedance (°C/W)
thJC
Revision: 12-Aug-11
Z
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50 D = 0.20 D = 0.10
0.01
Single pulse
(thermal resistance)
0.001
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94018
Page 4
www.vishay.com
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
140
160
180
See note (1)
120
DC
100
80
30 35 40 45
Square wave (D = 0.50) Rated V
R
applied
IF = 30 A I
F
= 15 A
10
100 1000
t
rr
(ns)
dIF/dt (A/µs)
40
60
80
90
30
50
70
VR = 200 V T
J
= 125 °C
T
J
= 25 °C
0
20
100 1000
Q
rr
(nC)
dIF/dt (A/µs)
600
1000
1200
400
800
VR = 200 V T
J
= 125 °C
T
J
= 25 °C
0
200
IF = 30 A I
F
= 15 A
VS-30EPH06PbF, VS-30EPH06-N3
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
90
80
70
60
50
40
30
20
Average Power Loss (W)
10
0
0 1020304045
0
DC
5 152535
I
- Average Forward Current (A)
F(AV)
RMS limit
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
) x R
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
;
thJC
F(AV)
/D) (see fig. 6);
Fig. 7 - Typical Reverse Recovery Time vs. dI
Fig. 8 - Typical Stored Charge vs. dI
R
/dt
F
/dt
F
Revision: 12-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
4
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94018
Page 5
www.vishay.com
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-30EPH06PbF, VS-30EPH06-N3
Vishay Semiconductors
= 200 V
V
R
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 12-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 10 - Reverse Recovery Waveform and Definitions
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 94018
Page 6
www.vishay.com
ORDERING INFORMATION TABLE
VS-30EPH06PbF, VS-30EPH06-N3
Vishay Semiconductors
Device code
VS- 30 E P H 06 PbF
51 32 4 6 7
- Vishay Semiconductors product
1
2 - Current rating (30 = 30 A)
- Circuit configuration:
3
E = Single diode
4 - Package:
P = TO-247AC modified
- H = Hyperfast recovery
5
- Voltage rating (06 = 600 V)
6
- Environmental digit:
7
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30EPH06PbF 25 500 Antistatic plastic tube
VS-30EPH06-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95253
Part marking information
Revision: 12-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247AC modified PbF www.vishay.com/doc?95255
TO-247AC modified -N3 www.vishay.com/doc?95442
6
Document Number: 94018
Page 7
www.vishay.com
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay Semiconductors
(2) R/2
2 x R
(5) L1
0.10 AC
Planting
B
Q
(2)
C
2 x b2
3 x b
M M
(c)
Section C - C, D - D, E - E
E
1
2
b4
(b1, b3, b5)
(b, b2, b4)
(3)
N
3
(4)
2 x e
S
D
L
Base metal
c1
See view B
A
A2
A
D
A
C
A1
DDE E
View B
A
(6)
ΦP
M M
Ø K BD
D2
Thermal pad
Lead assignments
Diodes
1. - Anode/open
C
C
2. - Cathode
3. - Anode
(Datum B)
ΦP1
D1 (4)
4
(4)
E1
View A - A
SYMBOL
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 K 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3 b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerance per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
1
Document Number: 95253
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 8
Legal Disclaimer Notice
www.vishay.com
Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
Loading...