VISHAY 30EPH06 VIS Datasheet

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Base

common

cathode

2

13

Cathode Anode

TO-247AC modified

VS-30EPH06PbF, VS-30EPH06-N3

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

PRODUCT SUMMARY

Package TO-247AC modified (2 pins)

I

F(AV)

V

R

at I

V

F

F

t

typ. See Recovery table

rr

T

max. 175 °C

J

Diode variation Single die

30 A

600 V

2.6 V

®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Single diode device

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to
JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Revision: 12-Aug-11

RRM

F(AV)

FSM

, T

J

Stg

,

V

BR

V

R

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IR = 100 μA 600 - -

R

IF = 30 A - 2.0 2.6

F

I

= 30 A, TJ = 150 °C - 1.34 1.75

F

VR = VR rated - 0.3 50

T

= 150 °C, VR = VR rated - 60 500

J

VR = 600 V - 33 - pF

T

Measured lead to lead 5 mm from package body - 3.5 - nH

S

TC = 116 °C 30

TJ = 25 °C 300

1

, [e-mail], [e-mail]

600 V

A

- 65 to 175 °C

Document Number: 94018

V

μA

VS-30EPH06PbF, VS-30EPH06-N3

www.vishay.com

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

= 125 °C - 77 -

T

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.7 -

J

= 30 A

I

F

/dt = 200 A/μs

dI

F

V

= 200 V

R

TJ = 25 °C - 65 -

T

= 125 °C - 345 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device Case style TO-247AC modified 30EPH06

T

, T

J

Stg

R

-0.50.9

thJC

R

thJA

R

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth
and greased

Vishay Semiconductors

-31-

- 65 - 175 °C

-0.4-

-6.0- g

-0.22- oz.

6.0

(5.0)

-

12

(10)

nsT

A

nC

°C/W

kgf · cm

(lbf · in)

Revision: 12-Aug-11

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94018

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

100

1000

0 200 400 500 600

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

300100

TJ = 25 °C

VS-30EPH06PbF, VS-30EPH06-N3

Vishay Semiconductors

1000

100

10

- Instantaneous

F

I

Forward Current (A)

1

0 3.51.5

0.5 2 3

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

1

2.5

VF - Forward Voltage Drop (V)

1000

100

10

1

0.1

0.01

- Reverse Current (µA)

R

I

0.001

0.0001
0 200 400

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

100

300

VR - Reverse Voltage (V)

TJ = 25 °C

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

600500

- Thermal Impedance (°C/W)

thJC

Revision: 12-Aug-11

Z

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1

0.1

D = 0.50
D = 0.20
D = 0.10

0.01

Single pulse

(thermal resistance)

0.001

0.00001 0.0001 0.001 0.01 0.1 1

D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

3

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

Document Number: 94018