Vishay 30EPH06 Data Sheet

30EPH06

Vishay High Power Products

Hyperfast Rectifier,

30 A FRED PtTM

Base common cathode

2

TO-247AC modified	1	3
	Cathode	Anode

PRODUCT SUMMARY

trr (typical)	28 ns
IF(AV)	30 A
VR	600 V

FEATURES

•Hyperfast recovery time

•Low forward voltage drop

•Low leakage current

•175 °C operating junction temperature

•Single diode device

•Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
	Peak repetitive reverse voltage	VRRM		600	V
	Average rectified forward current	IF(AV)	TC = 116 °C	30	A
	Non-repetitive peak surge current	IFSM	TJ = 25 °C	300
	Operating junction and storage temperatures	TJ, TStg		- 65 to 175	°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Breakdown voltage,	VBR,	IR = 100 µA	600	-	-
	blocking voltage	VR
							V
	Forward voltage	VF	IF = 30 A	-	2.0	2.6
			IF = 30 A, TJ = 150 °C	-	1.34	1.75
	Reverse leakage current	IR	VR = VR rated	-	0.3	50	µA
			TJ = 150 °C, VR = VR rated	-	60	500
	Junction capacitance	CT	VR = 600 V	-	33	-	pF
	Series inductance	LS	Measured lead to lead 5 mm from package body	-	3.5	-	nH

Document Number: 93017	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 02-Jun-08		1

30EPH06

Vishay High Power Products Hyperfast Rectifier,

30 A FRED PtTM

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V		-	28	35
	Reverse recovery time	trr	TJ = 25 °C		-	31	-	ns
			TJ = 125 °C		-	77	-
				IF = 30 A
			TJ = 25 °C		-	3.5	-
	Peak recovery current	IRRM		dIF/dt = 200 A/µs				A
			TJ = 125 °C		-	7.7	-
				VR = 200 V
	Reverse recovery charge	Qrr	TJ = 25 °C		-	65	-	nC
			TJ = 125 °C		-	345	-

THERMAL - MECHANICAL SPECIFICATIONS

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Maximum junction and storage	TJ, TStg		- 65	-	175	°C
	temperature range
	Thermal resistance,	RthJC		-	0.5	0.9
	junction to case per leg
	Thermal resistance,	RthJA	Typical socket mount	-	-	70	°C/W
	junction to ambient per leg
	Thermal resistance,	RthCS	Mounting surface, flat, smooth	-	0.4	-
	case to heatsink		and greased
	Weight			-	6.0	-	g
				-	0.22	-	oz.
	Mounting torque			6.0	-	12	kgf · cm
				(5.0)		(10)	(lbf · in)
	Marking device		Case style TO-247AC modified		30EPH06

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93017
2		Revision: 02-Jun-08

		30EPH06
	Hyperfast Rectifier,	Vishay High Power Products
	30 A FRED PtTM

	1000
<![if ! IE]> <![endif]>s	<![if ! IE]> <![endif]>ForwardCurrent (A)							<![if ! IE]> <![endif]>ReverseCurrent (µA)
<![if ! IE]> <![endif]>stantaneou					TJ = 175 °C
<![if ! IE]> <![endif]>I
	100
<![if ! IE]> <![endif]>- In	10				TJ = 150 °C
					TJ	= 25 °C
<![if ! IE]> <![endif]>F
								<![if ! IE]> <![endif]>R
								<![if ! IE]> <![endif]>I
	1
	0	0.5	1	1.5	2	2.5	3	3.5

1000

100 TJ = 175 °C

TJ = 150 °C

10

TJ = 125 °C

1 TJ = 100 °C

0.1

TJ = 25 °C

0.01

0.001

0.0001

0

100

200

300

400

500

600

VF - Forward Voltage Drop (V)	VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics	Fig. 2 - Typical Values of Reverse Current vs.
	Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100

TJ = 25 °C

10

0

100

200

300

400

500

600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	1
<![if ! IE]> <![endif]>Impedance	0.1
				D = 0.50		PDM
				D = 0.20
<![if ! IE]> <![endif]>- Thermal				D = 0.10		t1
	0.01			D = 0.05		t2
				D = 0.02
		Single pulse
				D = 0.01		Notes:
		(thermal resistance)
<![if ! IE]> <![endif]>thJC						1. Duty factor D = t1/t2 .
						2. Peak TJ = PDM x ZthJC	+ TC	.
<![if ! IE]> <![endif]>Z	0.001
	0.00001	0.0001	0.001	0.01	0.1	1		10

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 93017	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 02-Jun-08		3