Vishay 30EPH06 Data Sheet

Hyperfast Rectifier,
30 A FRED Pt
FEATURES
• Hyperfast recovery time
Base common cathode
2
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Single diode device
• Designed and qualified for industrial level
30EPH06
TM
DESCRIPTION/APPLICATIONS
TO-247AC modified
PRODUCT SUMMARY
trr (typical) 28 ns
I
F(AV)
V
R
13
Cathode Anode
30 A
600 V
State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
RRM
F(AV)
FSM
, T
J
TC = 116 °C 30
TJ = 25 °C 300
Stg
600 V
A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
V
,
BR
V
R
IR = 100 µA 600 - -
R
IF = 30 A - 2.0 2.6
F
I
= 30 A, TJ = 150 °C - 1.34 1.75
F
VR = VR rated - 0.3 50
= 150 °C, VR = VR rated - 60 500
T
J
VR = 600 V - 33 - pF
T
Measured lead to lead 5 mm from package body - 3.5 - nH
S
V
µA
Document Number: 93017 For technical questions, contact: diodes-tech@vishay.com Revision: 02-Jun-08 1
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30EPH06
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V - 28 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 77 -
J
TJ = 25 °C - 3.5 -
T
= 125 °C - 7.7 -
J
rr
TJ = 25 °C - 65 -
T
= 125 °C - 345 -
J
I
= 30 A
F
dI
/dt = 200 A/µs
F
= 200 V
V
R
-31-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to ambient per leg
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified 30EPH06
, T
T
J
Stg
-0.50.9
R
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth and greased
- 65 - 175 °C
-0.4-
-6.0- g
-0.22- oz.
6.0
(5.0)
-
12
(10)
kgf · cm (lbf · in)
nsT
A
nC
°C/W
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Document Number: 93017
30EPH06
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0 3.51.51 2.5
0.5 2 3
VF - Forward Voltage Drop (V)
Hyperfast Rectifier,
30 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0.0001 100
0 200 400
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
600500
100
- Junction Capacitance (pF)
T
C
10
0 200 400 500 600
TJ = 25 °C
300100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50 D = 0.20 D = 0.10
0.01
Single pulse
- Thermal Impedance (°C/W)
thJC
Z
0.001
(thermal resistance)
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
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Revision: 02-Jun-08 3
30EPH06
Vishay High Power Products
180
160
DC
140
Square wave (D = 0.50)
applied
Rated V
120
100
Allowable Case Temperature (°C)
80
0 5 10 15 20 25
Fig. 5 - Maximum Allowable Case Temperature vs.
90
80
70
60
50
40
30
20
Average Power Loss (W)
10
0
0
0 1020304045
Fig. 6 - Forward Power Loss Characteristics
R
See note (1)
30 35 40 45
I
- Average Forward Current (A)
F(AV)
Average Forward Current
RMS limit
DC
5 152535
I
- Average Forward Current (A)
F(AV)
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
Hyperfast Rectifier,
30 A FRED Pt
TM
(ns) t
(nC) Q
rr
rr
90
80
70
60
50
40
30
20
VR = 200 V
= 125 °C
T
J
10
= 25 °C
T
J
0
100 1000
IF = 30 A
= 15 A
I
F
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1200
VR = 200 V
= 125 °C
T
1000
J
= 25 °C
T
J
800
600
400
200
IF = 30 A
= 15 A
I
F
0
100 1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
Pd
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
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Document Number: 93017
4 Revision: 02-Jun-08
30EPH06
Hyperfast Rectifier,
30 A FRED Pt
L = 70 µH
dIF/dt
adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
dIF/dt
RRM
G
TM
Vishay High Power Products
= 200 V
V
R
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
trr x I
(5) dI current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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Revision: 02-Jun-08 5
30EPH06
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
30 E P H 06 -
1 - Current rating (30 = 30A)
2
3 - Package:
4 - H = Hyperfast recovery
5 - Voltage rating (06 = 600V)
6
Tube standard pack quantity: 25 pieces
Hyperfast Rectifier,
30 A FRED Pt
- Circuit configuration:
E = Single diode
P = TO-247AC modified
None = Standard production
-
PbF = Lead (Pb)-free
TM
51324
6
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95253
Part marking information http://www.vishay.com/doc?95255
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Document Number: 93017
Assembly lot code
xxxxxxx
V P119X
A C
TO-247 modified
Part number
Product version (optional):
P = Lead (Pb)-free None = Standard
Date code: Year 1 = 2001 Week 19 Line X
Part Marking Information
Example: This is a xxxxxxx with assembly lot code AC, assembled on WW 19, 2001 in the assembly line ”X”
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DIMENSIONS in millimeters and inches
(3)
B
(2) R/2
D
E
E/2
S
TO-247 modified
A
A2
A
Outline Dimensions
A
D2
(6)
ΦP
(Datum B)
ΦP1
SYMBOL
2 x R
(2)
1
2
(5) L1
C
2 x b2
3 x b
Planting
(c)
Section C - C, D - D, E - E
b4
(b1, b3, b5)
(b, b2, b4)
(4)
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
3
2 x e
D
L
Base metal
c1
See view B
C
A1
DDE E
View B
NOTES SYMBOL
D
A
C
C
Thermal pad
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
4
(4) E1
View A - A
MILLIMETERS INCHES
D1 (4)
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.49 0.059 0.098 E 15.29 15.87 0.602 0.625 3 A2 1.50 0.098 1.50 2.49 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 ΦK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3 b5 2.59 3.38 0.102 0.133 ΦP 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 ΦP1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 0.452 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerance per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
ΦP to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
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Revision: 11-Mar-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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