Vishay 30EPH03PbF User Manual
Ultrafast Rectifier,
30 A FRED Pt
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
30EPH03PbF
Vishay High Power Products
TM
Pb-free
Available
RoHS*
COMPLIANT
TO-247AC modified
13
Cathode Anode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
55 ns
30 A
300 V
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
RRM
F(AV)
FSM
, T
J
TC = 143 °C 30
TJ = 25 °C 300
Stg
300 V
A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 µA 300 - -
R
IF = 30 A - 1.08 1.25
F
I
= 30 A, TJ = 125 °C - 0.9 1.00
F
VR = VR rated - 0.05 60
T
= 125 °C, VR = VR rated - 280 600
J
VR = 300 V - 90 - pF
T
Measured lead to lead 5 mm from package body - 3.5 - nH
S
V
µA
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94017 For technical questions, contact: diodes-tech@vishay.com
Revision: 07-Apr-08 1
www.vishay.com
30EPH03PbF
Vishay High Power Products
Ultrafast Rectifier,
30 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V - - 55
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 52 -
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 7.3 -
J
rr
TJ = 25 °C - 53 -
T
= 125 °C - 190 -
J
= 30 A
I
F
/dt = - 200 A/µs
dI
F
V
= 200 V
R
-38-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC modified 30EPH03
T
, T
J
Stg
R
-0.50.9
thJC
R
R
thJA
thCS
Typical socket mount - - 40
Mounting surface, flat, smooth
and greased
- 65 - 175 °C
-0.4-
-6.0- g
-0.22- oz.
6.0
(5.0)
(10)
12
kgf · cm
(lbf ⋅ in)
nsT
A
nC
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 07-Apr-08
Document Number: 94017
30EPH03PbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0.2 1.81.00.8 1.4
0.6 1.2 1.60.4
VF - Forward Voltage Drop (V)
TJ = 175 °C
T
= 125 °C
J
= 25 °C
T
J
Ultrafast Rectifier,
30 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
50
0 100 200
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
150
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
300250
1
0.1
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001
Single pulse
(thermal resistance)
0.0001
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0 100 200 250 300
15050
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
0.1
P
DM
t
1
t
2
.
1/t2
.
+ T
thJC
C
.
1
Document Number: 94017 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 07-Apr-08 3
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