Schottky Generation 5.0, 2 x 15 A
Anode
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 15 A at 125 °C 0.67 V
F
High Performance
Base
common
2
cathode
Anode
2
Common
13
cathode
2 x 15 A
100 V
30CTT100
Vishay High Power Products
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
vs. IR trade off for high efficiency
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
15 Apk, TJ = 125 °C (typical, per leg) 0.63
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 30CTT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
T
15
920
I
AS
max.
J
at
A
A
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 30
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 144 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 240
TJ = 25 °C, IAS = 1.1 A, L = 60 mH 36 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load
condition and with rated
V
applied
RRM
Document Number: 94558 For technical questions, contact: diodes-tech@vishay.com
Revision: 07-Oct-08 1
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30CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
15 A
30 A - 0.92
RM
FM
(1)
15 A
30 A - 0.79
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 550 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
Forward voltage drop per leg V
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
= 125 °C - 5 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-220AB 30CTT100
minimum 6 (5)
maximum 12 (10)
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.81
-0.67
- 120 µA
- 10 000 V/µs
- 55 to 175 °C
2.5
1.25
2g
0.07 oz.
°C/W
kgf · cm
(lbf · in)
V
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2 Revision: 07-Oct-08
Document Number: 94558
30CTT100
100
Tj = 175°C
(A)
F
10
Instantaneous Forward Current - I
Tj = 125°C
High Performance
Schottky Generation 5.0,
2 x 15 A
(mA)
R
Reverse Current - I
0.001
0.0001
1000
(pF)
T
Vishay High Power Products
100
10
0.1
0.01
175°C
150°C
1
020406080100120
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.75
D = 0.5
1
(°C/W)
thJC
0.01
Thermal Impedance Z
0.001
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance - C
100
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
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Revision: 07-Oct-08 3
30CTT100
Vishay High Power Products
180
160
140
Square wave (D=0.50)
120
80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
100
0 5 10 15 20 25
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
FSM(A)
High Performance
Schottky Generation 5.0,
2 x 15 A
(A)
(AV)
1000
15
12
9
6
3
Average Power Loss - (Watts)
0
180°
120°
90°
60°
30°
RMS Limit
0 5 10 15 20 25
Average Forward Current - IF
Fig. 6 - Forward Power Loss Characteristics
DC
(AV)
(A)
Non-Repetitive Surge Current - I
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94558
4 Revision: 07-Oct-08
30CTT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 15 A
100
10
Tj = 125°C
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Tj = 175°C
Rectangular Pulse Duration ( μsec)
Tj = 25°C
001011
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 25°C
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94558 For technical questions, contact: diodes-tech@vishay.com
Revision: 07-Oct-08 5
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30CTT100
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 50 pieces
High Performance
Schottky Generation 5.0,
2 x 15 A
30 C T T 100
1 - Current rating (30 A)
- Circuit configuration:
2
C = Common cathode
- Package:
3
T = TO-220
4 - T = Trench
5 - Voltage code (100 V)
51324
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95222
Part marking information http://www.vishay.com/doc?95225
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6 Revision: 07-Oct-08
Document Number: 94558
DIMENSIONS in millimeters and inches
13
2
D
D1
H1
Q
13
2
C
C
D
D
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
M M
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1
(2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1
(6)
Outline Dimensions
Vishay Semiconductors
TO-220AB
SYMBOL
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com
NOTES SYMBOL
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
(7)
(8)
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
MILLIMETERS INCHES
NOTES
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Revision: 02-Oct-12
1
Document Number: 91000
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