Vishay 30CTT100 Data Sheet

30CTT100

Vishay High Power Products

High Performance

Schottky Generation 5.0, 2 x 15 A

	Base	2
	common
	cathode
	Anode	2	Anode
TO-220AB	1 Common 3
	cathode

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

•Optimized VF vs. IR trade off for high efficiency

•Increased ruggedness for reverse avalanche capability

•RBSOA available

•Negligible switching losses

•Submicron trench technology

•Full lead (Pb)-free and RoHS compliant devices

•Designed and qualified for industrial level

APPLICATIONS

• High efficiency SMPS

PRODUCT SUMMARY

•

Automotive

IF(AV)

2 x 15 A

•

High frequency switching

VR

100 V

•

Output rectification

VF at 15 A at 125 °C

0.67 V

•

Reverse battery protection

• Freewheeling

•

Dc-to-dc systems

• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

VRRM

100

V

VF

15 Apk, TJ = 125 °C (typical, per leg)

0.63

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

30CTT100

UNITS

Maximum DC reverse voltage

VR

TJ = 25 °C

100

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

per leg

IF(AV)

50 % duty cycle at TC = 144 °C, rectangular waveform

15

forward current

per device

30

A

Maximum peak one cycle

5 µs sine or 3 µs rect. pulse

Following any rated load

920

IFSM

condition and with rated

non-repetitive surge current per leg

10 ms sine or 6 ms rect. pulse

240

VRRM applied

Non-repetitive avalanche energy per leg

EAS

TJ = 25 °C, IAS = 1.1 A, L = 60 mH

36

mJ

Limited by frequency of operation and time pulse duration so

IAS at

Repetitive avalanche current per leg

IAR

that TJ < TJ max. IAS at TJ max. as a function of time pulse

A

TJ max.

See fig. 8

Document Number: 94558	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 07-Oct-08		1

30CTT100

Vishay High Power Products				High Performance
				Schottky Generation 5.0,
				2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		TYP.		MAX.			UNITS
				15 A	TJ = 25 °C	-		0.81
Forward voltage drop per leg		VFM (1)		30 A		-		0.92			V
				15 A	TJ = 125 °C	-		0.67
				30 A		-		0.79
Reverse leakage current per leg		IRM (1)		TJ = 25 °C	VR = Rated VR	-		120			µA
				TJ = 125 °C		-		5			mA
Junction capacitance per leg		CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		550		-			pF
Series inductance per leg		LS		Measured lead to lead 5 mm from package body		8.0		-			nH
Maximum voltage rate of change		dV/dt		Rated VR		-		10 000			V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES				UNITS
Maximum junction and		TJ, TStg				- 55 to 175					°C
storage temperature range
Maximum thermal resistance,						2.5
junction to case per leg
		RthJC		DC operation
Maximum thermal resistance,						1.25					°C/W
junction to case per device
Typical thermal resistance,		RthCS		Mounting surface, smooth and greased		0.5
case to heatsink
Approximate weight						2					g
						0.07					oz.
Mounting torque	minimum					6 (5)				kgf · cm
										(lbf · in)
	maximum					12 (10)
Marking device				Case style TO-220AB			30CTT100

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94558
2		Revision: 07-Oct-08

30CTT100

High Performance Vishay High Power Products

Schottky Generation 5.0,

2 x 15 A

	100
		Tj = 175°C
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>-I
<![if ! IE]> <![endif]>InstantaneousForwardCurrent	10
				Tj = 125°C
			Tj = 25°C
	1
	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6

ForwardVoltageDrop-VFM(V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

		100
		10	175°C
	<![if ! IE]> <![endif]>(mA)		150°C
		1	125°C
	<![if ! IE]> <![endif]>IR
	<![if ! IE]> <![endif]>-		100°C
	<![if ! IE]> <![endif]>ReverseCurrent
		0.1	25°C
			75°C
		0.01	50°C
		0.001
		0.0001

0

20

40

60

80

100

120

ReverseVoltage-VR(V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

1000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>JunctionCapacitance-C
100
0	20	40	60	80	100	120

ReverseVoltage-VR(V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

	10
<![if ! IE]> <![endif]>ThermalImpedanceZthJC(°C/W)			D = 0.75
	1	D = 0.5
		D = 0.33
		D = 0.25
	0.1	D = 0.2
			Single Pulse
	0.01		(Thermal Resistance)
	0.001
	1E-05		1E-04	1E-03	1E-02	1E-01	1E+00
			t1,RectangularPulseDuration(Seconds)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94558	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 07-Oct-08		3