Vishay 30CTH03 Data Sheet
TO-220AB
PRODUCT SUMMARY
trr (maximum) 36 ns
I
F(AV)
V
R
1
Anode
Hyperfast Rectifier,
2 x 15 A FRED Pt
Base
common
cathode
2
2
Common
cathode
Anode
2 x 15 A
300 V
3
30CTH03
Vishay High Power Products
TM
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for AEC Q101 level
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current I
Operating junction and storage temperatures T
per diode
RRM
I
F(AV)
FSM
, T
J
TC = 153 °C 15
TC = 25 °C 150
Stg
300 V
Aper device 30
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
V
,
BR
V
R
IR = 100 µA 300 - -
R
IF = 15 A - 1.0 1.25
F
T
S
= 15 A, TJ = 125 °C - 0.85 0.95
I
F
VR = VR rated - - 40
T
= 125 °C, VR = VR rated - 8 200
J
VR = 300 V - 38 - pF
Measured lead to lead 5 mm from package body - 8 - nH
V
µA
Document Number: 93015 For technical questions, contact: diodes-tech@vishay.com
Revision: 28-Jul-08 1
www.vishay.com
30CTH03
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V - - 36
= 1 A, dIF/dt = 100 A/µs, VR = 30 V - - 30
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 48 -
T
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.5 -
J
TJ = 25 °C - 46 -
= 125 °C - 160 -
T
J
= 15 A
I
F
/dt = 200 A/µs
dI
F
= 200 V
V
R
-33-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
Thermal resistance, junction to case per diode R
Marking device Case style TO-220AB 30CTH03
, T
J
Stg
--1.4°C/W
thJC
- 65 - 175 °C
ns
A
nC
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 28-Jul-08
Document Number: 93015
30CTH03
100
10
Current (A)
- Instantaneous Forward
F
I
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
- Reverse Current (mA)
R
I
Vishay High Power Products
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
0.01
0.001
0 100 300250200
TJ = 75 °C
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
TJ = 25 °C
15050
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
0 100 200 250 300
TJ = 25 °C
15050
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10 1
Document Number: 93015 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 28-Jul-08 3
Loading...