TO-220AB
PRODUCT SUMMARY
trr (maximum) 36 ns
I
F(AV)
V
R
1
Anode
Hyperfast Rectifier,
2 x 15 A FRED Pt
Base
common
cathode
2
2
Common
cathode
Anode
2 x 15 A
300 V
3
30CTH03
Vishay High Power Products
TM
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for AEC Q101 level
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current I
Operating junction and storage temperatures T
per diode
RRM
I
F(AV)
FSM
, T
J
TC = 153 °C 15
TC = 25 °C 150
Stg
300 V
Aper device 30
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
V
,
BR
V
R
IR = 100 µA 300 - -
R
IF = 15 A - 1.0 1.25
F
T
S
= 15 A, TJ = 125 °C - 0.85 0.95
I
F
VR = VR rated - - 40
T
= 125 °C, VR = VR rated - 8 200
J
VR = 300 V - 38 - pF
Measured lead to lead 5 mm from package body - 8 - nH
V
µA
Document Number: 93015 For technical questions, contact: diodes-tech@vishay.com
Revision: 28-Jul-08 1
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30CTH03
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V - - 36
= 1 A, dIF/dt = 100 A/µs, VR = 30 V - - 30
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 48 -
T
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.5 -
J
TJ = 25 °C - 46 -
= 125 °C - 160 -
T
J
= 15 A
I
F
/dt = 200 A/µs
dI
F
= 200 V
V
R
-33-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
Thermal resistance, junction to case per diode R
Marking device Case style TO-220AB 30CTH03
, T
J
Stg
--1.4°C/W
thJC
- 65 - 175 °C
ns
A
nC
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2 Revision: 28-Jul-08
Document Number: 93015
30CTH03
100
10
Current (A)
- Instantaneous Forward
F
I
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
- Reverse Current (mA)
R
I
Vishay High Power Products
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
0.01
0.001
0 100 300250200
TJ = 75 °C
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
TJ = 25 °C
15050
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
0 100 200 250 300
TJ = 25 °C
15050
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10 1
Document Number: 93015 For technical questions, contact: diodes-tech@vishay.com
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Revision: 28-Jul-08 3
30CTH03
Vishay High Power Products
180
170
DC
160
Square wave (D = 0.50)
Rated V
applied
150
Allowable Case Temperature (°C)
140
0 5 10 15 20 25
Fig. 5 - Maximum Allowable Case Temperature vs.
20
16
12
8
4
Average Power Loss (W)
0
0 5 10 15 20 25
Fig. 6 - Forward Power Loss Characteristics
R
See note (1)
I
- Average Forward Current (A)
F(AV)
Average Forward Current
DC
I
- Average Forward Current (A)
F(AV)
Hyperfast Rectifier,
2 x 15 A FRED Pt
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
TM
100
TJ = 125 °C
(ns)
rr
t
10
100 1000
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1000
100
(nC)
rr
Q
10
100 1000
TJ = 25 °C
VR = 200 V
dIF/dt (A/µs)
TJ = 125 °C
TJ = 25 °C
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
IF = 15 A
IF = 15 A
VR = 200 V
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
Pd
REV
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 93015
4 Revision: 28-Jul-08
30CTH03
Hyperfast Rectifier,
2 x 15 A FRED Pt
L = 70 µH
dIF/dt
adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
(1) dI
/dt - rate of change of current
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
dIF/dt
RRM
G
TM
Vishay High Power Products
= 200 V
V
R
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
trr x I
(5) dI
current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93015 For technical questions, contact: diodes-tech@vishay.com
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Revision: 28-Jul-08 5
30CTH03
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
30 C T H 03 -
1 - Current rating (30 = 30 A)
2 - C = Common cathode
3 - Package:
4 T = TO-220
4 - H = Hyperfast recovery
5 - Voltage rating (03 = 300 V)
6 -
Tube standard pack quantity: 50 pieces
Hyperfast Rectifier,
2 x 15 A FRED Pt
None = Standard production
PbF = Lead (Pb)-free
TM
51324
6
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95222
Part marking information http://www.vishay.com/doc?95267
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6 Revision: 28-Jul-08
Document Number: 93015
Assembly
lot code
xxxxxxxx
V P119X
AC
TO-220AB
Part number
Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X
Part Marking Information
Vishay High Power Products
Example: This is a xxxxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”
Document Number: 95225 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
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1
DIMENSIONS in millimeters and inches
A
Ø P
E
Q
TO-220AB
B
A
A1
H1
Seating plane
A
Outline Dimensions
Vishay High Power Products
E
H1
Thermal pad
D
(3)
SYMBOL
Detail B
D1
3241
DD
CC
2 x e
e1
c
Section C - C and D - D
0.015 ABC
b, b2
b1, b3
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
(2)
L1
C
L
MM
c1
C
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
A2
A
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES SYMBOL
Sheet 2
θ
View A - A
123
C
C
3 x b2 3 x b
Detail B
MILLIMETERS INCHES
D2
E1
D
D
L1
NOTES
A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355
A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507
A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3
b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350
b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC
b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270
b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580
c 0.36 0.61 0.014 0.024 L1 3.55 3.96 0.140 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120
D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimensions: inches
Document Number: 95222 For technical questions concerning discrete products, contact: diodestech@vishay.com
Revision: 16-Nov-09 For technical questions concerning module products, contact: indmodules@vishay.com
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1
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Disclaimer
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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therein, which apply to these products.
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Revision: 18-Jul-08 1
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