30CTH03
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED PtTM
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Base |
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common |
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cathode |
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2 |
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2 |
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Common |
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cathode |
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TO-220AB |
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Anode |
Anode |
PRODUCT SUMMARY
trr (maximum) |
36 ns |
IF(AV) |
2 x 15 A |
VR |
300 V |
FEATURES
•Hyperfast recovery time
•Low forward voltage drop
•Low leakage current
•175 °C operating junction temperature
•Designed and qualified for AEC Q101 level
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Peak repetitive reverse voltage |
VRRM |
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300 |
V |
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Average rectified forward current |
per diode |
IF(AV) |
TC = 153 °C |
15 |
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per device |
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30 |
A |
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Non-repetitive peak surge current |
IFSM |
TC = 25 °C |
150 |
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Operating junction and storage temperatures |
TJ, TStg |
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- 65 to 175 |
°C |
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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Breakdown voltage, |
VBR, |
IR = 100 µA |
300 |
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blocking voltage |
VR |
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V |
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Forward voltage |
VF |
IF = 15 A |
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1.0 |
1.25 |
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IF = 15 A, TJ = 125 °C |
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0.85 |
0.95 |
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Reverse leakage current |
IR |
VR = VR rated |
- |
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40 |
µA |
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TJ = 125 °C, VR = VR rated |
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8 |
200 |
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Junction capacitance |
CT |
VR = 300 V |
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38 |
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pF |
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Series inductance |
LS |
Measured lead to lead 5 mm from package body |
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8 |
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nH |
Document Number: 93015 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 28-Jul-08 |
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30CTH03
Vishay High Power Products Hyperfast Rectifier,
2 x 15 A FRED PtTM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNITS |
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IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V |
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36 |
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Reverse recovery time |
trr |
IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V |
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30 |
ns |
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TJ = 25 °C |
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33 |
- |
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TJ = 125 °C |
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48 |
- |
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IF = 15 A |
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TJ = 25 °C |
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2.8 |
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A |
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Peak recovery current |
IRRM |
dIF/dt = 200 A/µs |
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TJ = 125 °C |
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6.5 |
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VR = 200 V |
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Reverse recovery charge |
Qrr |
TJ = 25 °C |
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46 |
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nC |
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TJ = 125 °C |
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160 |
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER |
SYMBOL |
MIN. |
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TYP. |
MAX. |
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UNITS |
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Maximum junction and storage temperature range |
TJ, TStg |
- 65 |
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175 |
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°C |
Thermal resistance, junction to case per diode |
RthJC |
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1.4 |
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°C/W |
Marking device |
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Case style TO-220AB |
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30CTH03 |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 93015 |
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Revision: 28-Jul-08 |
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30CTH03
Hyperfast Rectifier, Vishay High Power Products
2 x 15 A FRED PtTM
<![if ! IE]> <![endif]>tantaneousIns Forward |
100 |
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<![if ! IE]> <![endif]>CurrentesRever- (mA) |
<![if ! IE]> <![endif]>Current(A) |
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TJ = 175 °C |
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10 |
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TJ = 125 °C |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>- |
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<![if ! IE]> <![endif]>R |
<![if ! IE]> <![endif]>F |
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<![if ! IE]> <![endif]>I |
<![if ! IE]> <![endif]>I |
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1 |
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0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
100
TJ = 175 °C TJ = 150 °C
10
TJ = 125 °C
1 TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01 TJ = 25 °C
0.001
0 |
50 |
100 |
150 |
200 |
250 |
300 |
VF - Forward Voltage Drop (V) |
VR - Reverse Voltage (V) |
Fig. 1 - Typical Forward Voltage Drop Characteristics |
Fig. 2 - Typical Values of Reverse Current vs. |
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Reverse Voltage |
<![endif]>CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0 |
50 |
100 |
150 |
200 |
250 |
300 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![if ! IE]> <![endif]>(°C/W) |
10 |
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<![if ! IE]> <![endif]>Impedance |
1 |
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PDM |
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D = 0.50 |
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<![if ! IE]> <![endif]>- Thermal |
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t1 |
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D = 0.20 |
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0.1 |
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t2 |
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D = 0.10 |
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D = 0.05 |
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Notes: |
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Single pulse |
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D = 0.02 |
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<![if ! IE]> <![endif]>thJC |
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1. Duty factor D = t1/t2 . |
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(thermal resistance) |
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D = 0.01 |
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2. Peak TJ = PDM x ZthJC |
+ TC |
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<![if ! IE]> <![endif]>Z |
0.01 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
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10 |
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93015 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 28-Jul-08 |
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