Vishay 30CTH02PbF, 30CTH02FPPbF Data Sheet

30CTH02PbF/30CTH02FPPbF

Vishay High Power Products

Hyperfast Rectifier,

2 x 15 A FRED PtTM

30CTH02PbF 30CTH02FPPbF

	Base
	common
	cathode
	2
	2
	Common
1	cathode		3
Anode		Anode
	TO-220AB

		2
	Common
1	cathode		3
Anode		Anode

TO-220 FULL-PAK

PRODUCT SUMMARY

trr (maximum)	30 ns
IF(AV)	2 x 15 A
VR	200 V

FEATURES

	•	Hyperfast recovery time
	• Low forward voltage drop		Pb-free
	• Low leakage current		Available
			RoHS*
	•	175 °C operating junction temperature
			COMPLIANT

•Fully isolated package (VINS = 2500 VRMS)

•Lead (Pb)-free (“PbF” suffix)

•TO-220 designed and qualified for AEC Q101 level

•TO-220FP designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

	PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
	Peak repetitive reverse voltage		VRRM		200	V
		per diode		TC = 159 °C	15
	Average rectified forward current	(FULL-PAK) per diode	IF(AV)	TC = 125 °C		A
		per device			30
	Non-repetitive peak surge current		IFSM	TJ = 25 °C	200
	Operating junction and storage temperatures		TJ, TStg		- 65 to 175	°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Breakdown voltage,	VBR,	IR = 100 µA	200	-	-
	blocking voltage	VR
							V
	Forward voltage	VF	IF = 15 A	-	0.92	1.05
			IF = 15 A, TJ = 125 °C	-	0.78	0.85
	Reverse leakage current	IR	VR = VR rated	-	-	10	µA
			TJ = 125 °C, VR = VR rated	-	5	300
	Junction capacitance	CT	VR = 200 V	-	57	-	pF
	Series inductance	LS	Measured lead to lead 5 mm from package body	-	8	-	nH

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94014	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 11-Sep-08		1

30CTH02PbF/30CTH02FPPbF

Vishay High Power Products	Hyperfast Rectifier,
	2 x 15 A FRED PtTM

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNITS
			IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V		-	-	35
	Reverse recovery time	trr	IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V		-	-	30	ns
			TJ = 25 °C		-	26	-
			TJ = 125 °C	IF = 15 A	-	40	-
				dIF/dt = 200 A/µs
			TJ = 25 °C		-	2.8	-
	Peak recovery current	IRRM		VR = 160 V				A
			TJ = 125 °C		-	6.0	-
	Reverse recovery charge	Qrr	TJ = 25 °C		-	37	-	nC
			TJ = 125 °C		-	120	-

THERMAL - MECHANICAL SPECIFICATIONS

	PARAMETER		SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
	Maximum junction and storage		TJ, TStg		- 65	-	175	°C
	temperature range
	Thermal resistance,	per diode	RthJC	Mounting surface, flat, smooth	-	-	1.1	°C/W
	junction to case	(FULL-PAK) per diode		and greased	-	-	3.5
	Marking device			Case style TO-220AB		30CTH02
				Case style TO-220 FULL-PAK		30CTH02FP

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94014
2		Revision: 11-Sep-08

30CTH02PbF/30CTH02FPPbF

Hyperfast Rectifier,	Vishay High Power Products
2 x 15 A FRED PtTM

<![if ! IE]>

<![endif]>Current (A)

<![if ! IE]>

<![endif]>IF - Instantaneous Forward

100

TJ = 175 °C

10 TJ = 125 °C TJ = 25 °C

1
0.4	0.6	0.8	1.0	1.2	1.4	1.6

VF - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

<![if ! IE]>

<![endif]>IR - Reverse Current (µA)

100
		TJ = 175 °C
10				TJ = 150 °C
1					TJ = 125 °C
							TJ = 100 °C
0.1										TJ = 75 °C
0.01												TJ = 50 °C
0.001														TJ = 25 °C
0.0001
		50									150
0					100													200

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

100	TJ = 25 °C

10

0

50

100

150

200

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance	1
						PDM
<![if ! IE]> <![endif]>Thermal				D = 0.50		t1
	0.1			D = 0.20		t2
				D = 0.10
		Single pulse
				D = 0.05	Notes:
<![if ! IE]> <![endif]>-		(thermal resistance)		D = 0.02
<![if ! IE]> <![endif]>thJC					1. Duty factor D = t1/t2 .
				D = 0.01
					2. Peak TJ	= PDM x ZthJC	+ TC
								.
<![if ! IE]> <![endif]>Z	0.01
	0.00001	0.0001	0.001	0.01	0.1	1		10

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

		www.vishay.com
Document Number: 94014	For technical questions, contact: [e-mail]
Revision: 11-Sep-08		3