Vishay 30CTH02PbF, 30CTH02FPPbF Data Sheet
30CTH02PbF
K
Base
common
cathode
2
Hyperfast Rectifier,
2 x 15 A FRED Pt
30CTH02FPPbF
30CTH02PbF/30CTH02FPPbF
Vishay High Power Products
TM
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Fully isolated package (V
• Lead (Pb)-free (“PbF” suffix)
• TO-220 designed and qualified for AEC Q101 level
• TO-220FP designed and qualified for industrial level
= 2500 V
INS
RMS
)
Pb-free
Available
RoHS*
COMPLIANT
Common
1
Anode
TO-220AB
2
cathode
3
Anode
Anode
TO-220 FULL-PA
1
2
Common
cathode
3
Anode
DESCRIPTION/APPLICATIONS
200 V series are the state of the art hyperfast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
PRODUCT SUMMARY
trr (maximum) 30 ns
I
F(AV)
V
R
2 x 15 A
200 V
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
per diode
Average rectified forward current
Non-repetitive peak surge current I
Operating junction and storage temperatures T
(FULL-PAK) per diode T
per device 30
RRM
I
F(AV)
FSM
, T
J
TC = 159 °C
= 125 °C
C
TJ = 25 °C 200
Stg
200 V
15
A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94014 For technical questions, contact: diodes-tech@vishay.com
Revision: 11-Sep-08 1
,
V
BR
V
R
IR = 100 µA 200 - -
R
IF = 15 A - 0.92 1.05
F
I
= 15 A, TJ = 125 °C - 0.78 0.85
F
VR = VR rated - - 10
T
= 125 °C, VR = VR rated - 5 300
J
VR = 200 V - 57 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
V
µA
www.vishay.com
30CTH02PbF/30CTH02FPPbF
Vishay High Power Products
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V - - 35
= 1 A, dIF/dt = 100 A/µs, VR = 30 V - - 30
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 40 -
T
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.0 -
J
TJ = 25 °C - 37 -
T
= 125 °C - 120 -
J
I
= 15 A
F
/dt = 200 A/µs
dI
F
V
= 160 V
R
-26-
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Marking device
(FULL-PAK) per diode - - 3.5
per diode
T
, T
J
Stg
R
thJC
Mounting surface, flat, smooth
and greased
Case style TO-220AB 30CTH02
Case style TO-220 FULL-PAK 30CTH02FP
- 65 - 175 °C
--1.1
ns
A
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 11-Sep-08
Document Number: 94014
30CTH02PbF/30CTH02FPPbF
100
10
Current (A)
- Instantaneous Forward
F
I
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage Drop (V)
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
Hyperfast Rectifier,
2 x 15 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
100
10
0.1
0.01
0.001
0.0001
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
0 100 200
50
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
150
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
0 50 100 150 200
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
0.1
Single pulse
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
110
Document Number: 94014 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 11-Sep-08 3
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