Vishay 30BQ100 Data Sheet
Bulletin PD-2.441 rev. D 05/01
30BQ100
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 30BQ100 Units
I
Rectangular 3.0 A
F(AV)
waveform
V
RRM
I
@ t p= 5 µs sine 2100 A
FSM
VF@ 3.0 Apk, TJ = 125°C 0.62 V
TJrange - 55 to 1 75 °C
Device Marking: IR3J
100 V
2.75 (.108)
3.15 (.124)
3 Amp
SMC
Description/Features
The 30BQ100 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot
prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
5.59 (.220)
6.22 (.245)
www.irf.com
6.60 (.260)
7.11 (.280)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
7.75 (.305)
8.13 (.320)
Outline SMC
.152 (.006)
.305 (.012)
.102 (.004)
.203 (.008)
1
30BQ100
Bulletin PD-2.441 rev. D 05/01
Voltage Ratings
Part number 30BQ100
VRMax. DC Reverse Voltage (V) 100
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters 30BQ Units Conditions
I
Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 148 °C, rectangular wave form
F(AV)
4.0 50% duty cycle @ TL = 138 °C, rectangular wave form
I
Max. Peak One Cycle Non-Repetitive 2100 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 100 10ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy 50 mJ TJ = 25 °C, IAS = 2.8A, L = 10mH
IARRepetitive Avalanche Current 2.8 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
Electrical Specifications
Parameters 30BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.79 V @ 3A
0.90 V @ 6A
0.62 V @ 3A
0.70 V @ 6A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
5.0 mA TJ = 125 °C
CTMax. Junction Capacitance 115 pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 30BQ Units Conditions
TJMax. Junction Temperature Range - 55 to 175 °C
T
Max. Storage Temperature Range - 55 to 175 °C
stg
R
Max. Thermal Resistance, Junction 12 °C/W DC Operation (* See Fig. 4)
thJL
to Lead (2)
R
Max. Thermal Resistance, Junction 46 °C/W DC Operation
thJA
to Ambient
wt Approximate Weight 0.24 g
Case Style SMC Similar DO-214AB
(2) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package
2
www.irf.com
Loading...