The 30BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
30BQ040
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SMC
1
30BQ040
Bulletin PD-2.439 rev. G 07/04
Voltage Ratings
Part number30BQ040
VRMax. DC Reverse Voltage (V)40
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters30BQ Units Conditions
I
Max. Average Forward Current3.0A50% duty cycle @ TL = 118 °C, rectangular wave form
F(AV)
4.050% duty cycle @ TL= 110 °C, rectangular wave form
I
Max. Peak One Cycle Non-Repetitive2000A5µs Sine or 3µs Rect. pulse
FSM
Surge Current11010ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy6.0mJTJ = 25 °C, IAS = 1.0A, L = 12mH
IARRepetitive Avalanche Current1.0ACurrent decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters30BQ Units Conditions
VFMMax. Forward Voltage Drop (1)0.53V@ 3A
0.68V@ 6A
0.43V@ 3A
0.57V@ 6A
IRMMax. Reverse Leakage Current (1)0.5mA TJ = 25 °C
30mA TJ = 125 °C
CTMax. Junction Capacitance230pFVR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance3.0nHMeasured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change10000V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters30BQ UnitsConditions
TJMax. Junction Temperature Range (*) - 55 to 150 °C
T
Max. Storage Temperature Range- 55 to 150 °C
stg
R
Max. Thermal Resistance12°C/W DC operation
thJL
Junction to Lead(**)
R
Max. Thermal Resistance46°C/W DC operation
thJA
Junction to Ambient
wtApproximate Weight0.24 (0.008) g (oz.)
Case StyleSMCSimilar to DO-214AB
Device MarkingIR3F
(*) dPtot1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
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30BQ040
0
Bulletin PD-2.439 rev. G 07/04
10
(A)
F
1
Instantaneous Forward Current - I
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
100000
(µA)
R
Reverse Current - I
T = 150˚C
J
10000
1000
100
10
125˚C
100˚C
75˚C
50˚C
25˚C
1
0 1020304
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
T = 25˚C
J
(p F)
T
100
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
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Junction Capacitance - C
10
0 5 10 15 20 25 30 35 40 45
Forward Voltage Drop - VFM (V)
Fig. 1 - Max. Forward Voltage Drop
Characteristics (Per Leg)
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
100
(°C/W)
Thermal Impedance Z
D = 0.75
10
thJC
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single Pulse
(Thermal Resistance)
0.1
0.000010.00010.0010.010.1110100
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC+Tc
P
DM
t
1
t
2
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Leg)
thJC
3
30BQ040
Bulletin PD-2.439 rev. G 07/04
160
150
DC
140
130
120
110
100
Square wave (D = 0.50)
90
80% Rated Vr applied
80
Allowable Lead Temperature (°C)
see note (2)
70
012345
Average Forward Current - I
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
10000
(A)
FSM
1000
D=0.20
D=0.25
D=0.33
D=0.50
D=0.75
F(AV)
(A)
2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
1.5
D = 0.20
RMS Limit
1
0.5
Average Power Loss (Watts)
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I
F(AV)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
DC
(A)
(2) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
4
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
Non-Repetitive Surge Current - I
10
10100100010000
Square Wave Pulse Duration - T
(Microsec)
p
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
) x R
thJC
;
F(AV)
/ D) (see Fig. 6);
= 80% rated V
R1
R
F(AV)
REV
x VFM @ (I
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Outline Table
Device Marking: IR3F
30BQ040
Bulletin PD-2.439 rev. G 07/04
2.75 (.108)
3.15 (.124)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
6.60 (.260)
7.11 (.280)
7.75 (.305)
8.13 (.320)
5.59 (.220)
6.22 (.245)
.152 (.006)
.305 (.012)
.102 (.004)
.203 (.008)
CATHODEANODE
12
POLARITYPART NUMBER
1
2
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
www.irf.com
IR3F
YYWWX
VOLTAGE
CURRENT
IR LOGO
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
5
30BQ040
Bulletin PD-2.439 rev. G 07/04
Tape & Reel Information
Ordering Information Table
Dimensions in millimetres and (inches)
Device Code
30BQ040TR-
5
24
1
1-Current Rating
2-B = Single Lead Diode
3-Q = Schottky Q Series
4-Voltage Rating (040 = 40V)
5-y none= Box (1000 pieces)
3
y TR = Tape & Reel (3000 pieces)
6y none= Standard Production
y PbF = Lead-Free
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
6
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information. 07/04
6
TAC Fax: (310) 252-7309
www.irf.com
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