Vishay 30BQ040TR Data Sheet
Bulletin PD-2.439 rev. G 07/04
30BQ040
SCHOTTKY RECTIFIER 3 Amp
I
= 3.0Amp
F(AV)
VR = 40V
Major Ratings and Characteristics
Characteristics 30BQ040 Units
I
Rectangular 3.0 A
F(AV)
waveform
V
RRM
I
@ t p= 5 µs sine 2000 A
FSM
VF@ 3.0 Apk, TJ = 125°C 0.43 V
TJrange - 55 to 150 °C
40 V
Description/ Features
The 30BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
30BQ040
www.irf.com
SMC
1
30BQ040
Bulletin PD-2.439 rev. G 07/04
Voltage Ratings
Part number 30BQ040
VRMax. DC Reverse Voltage (V) 40
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters 30BQ Units Conditions
I
Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 118 °C, rectangular wave form
F(AV)
4.0 50% duty cycle @ TL= 110 °C, rectangular wave form
I
Max. Peak One Cycle Non-Repetitive 2000 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 110 10ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 1.0A, L = 12mH
IARRepetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters 30BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.53 V @ 3A
0.68 V @ 6A
0.43 V @ 3A
0.57 V @ 6A
IRMMax. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
30 mA TJ = 125 °C
CTMax. Junction Capacitance 230 pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 30BQ Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance 12 °C/W DC operation
thJL
Junction to Lead (**)
R
Max. Thermal Resistance 46 °C/W DC operation
thJA
Junction to Ambient
wt Approximate Weight 0.24 (0.008) g (oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR3F
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
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