Vishay 30BQ040TR Data Sheet
Bulletin PD-2.439 rev. G 07/04
30BQ040
SCHOTTKY RECTIFIER |
3 Amp |
IF(AV) = 3.0Amp
VR = 40V
Major Ratings and Characteristics
Characteristics |
30BQ040 |
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IF(AV) |
Rectangular |
3.0 |
A |
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waveform |
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VRRM |
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40 |
V |
IFSM |
@ t p= 5 µs sine |
2000 |
A |
VF |
@3.0 Apk, TJ = 125°C |
0.43 |
V |
TJ |
range |
- 55 to 150 |
°C |
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Description/ Features
The 30BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Case Styles
30BQ040
SMC
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1 |
30BQ040
Bulletin PD-2.439 rev. G 07/04
Voltage Ratings
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30BQ040 |
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VR |
Max. DC Reverse Voltage (V) |
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40 |
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VRWM Max. Working Peak Reverse Voltage (V) |
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Absolute Maximum Ratings |
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Parameters |
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30BQ |
Units |
Conditions |
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IF(AV) |
Max. Average Forward Current |
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3.0 |
A |
50% duty cycle @ TL = 118 °C, rectangular wave form |
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4.0 |
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50% duty cycle @ TL= 110 °C, rectangular wave form |
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IFSM |
Max. Peak One Cycle Non-Repetitive |
2000 |
A |
5µs Sine or 3µs Rect. pulse |
Following any |
rated |
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load condition |
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Surge Current |
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110 |
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10ms Sine or 6ms Rect. pulse |
with rated VRRM applied |
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EAS |
Non Repetitive Avalanche Energy |
6.0 |
mJ |
TJ = 25 °C, IAS = 1.0A, L = 12mH |
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IAR |
Repetitive Avalanche Current |
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1.0 |
A |
Current decaying linearly to zero in 1 µsec |
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Frequency limited by TJ max. Va = 1.5 x Vr typical |
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Electrical Specifications |
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Parameters |
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30BQ |
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Conditions |
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VFM |
Max. Forward Voltage Drop |
(1) |
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0.53 |
V |
@ 3A |
TJ = 25 °C |
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0.68 |
V |
@ 6A |
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0.43 |
V |
@ 3A |
TJ = 125 °C |
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0.57 |
V |
@ 6A |
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IRM |
Max. Reverse Leakage Current (1) |
0.5 |
mA |
TJ = 25 °C |
VR = rated VR |
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30 |
mA |
TJ = 125 °C |
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CT |
Max. Junction Capacitance |
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230 |
pF |
VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C |
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LS |
Typical Series Inductance |
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3.0 |
nH |
Measured lead to lead 5mm from package body |
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dv/dt |
Max. Voltage Rate of Change |
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10000 |
V/µs |
(Rated VR) |
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(1) Pulse Width < 300µs, Duty Cycle < 2% |
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Thermal-Mechanical Specifications |
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Parameters |
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30BQ |
Units |
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Conditions |
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TJ |
Max. Junction Temperature Range (*) |
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- 55 to 150 |
°C |
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Tstg |
Max. Storage Temperature Range |
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- 55 to 150 |
°C |
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RthJL |
Max. Thermal Resistance |
(**) |
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12 |
°C/W |
DC operation |
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Junction to Lead |
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RthJA |
Max. Thermal Resistance |
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46 |
°C/W |
DC operation |
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Junction to |
Ambient |
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wt |
Approximate |
Weight |
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0.24(0.008) |
g (oz.) |
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Case Style |
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SMC |
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Similar to DO-214AB |
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Device Marking |
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IR3F |
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(*) dPtot |
1 |
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< |
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thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j-a) |
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(**) Mounted 1 inch square PCB |
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www.irf.com |
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