Vishay 30BQ015 Data Sheet

Bulletin PD-2.490 rev. D 05/01
30BQ015
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 30BQ015 Units
I
Rectangular 3.0 A
waveform
V
RRM
I
@ t p= 5 µs sine 650 A
FSM
VF@ 1.0Apk, TJ = 75°C 0.30 V
TJrange - 55 to 125 °C
Device Marking: IR3C
2.75 (.108)
3.15 (.124)
15 V
3 Amp
SMC
Description/Features
The 30BQ015 surface mount Schottky rectifier has been de­signed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125°C junction temperature. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging,
and reverse battery protection.
125°C TJ operation (VR < 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
5.59 (.220)
6.22 (.245)
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6.60 (.260)
7.11 (.280)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
7.75 (.305)
8.13 (.320)
Outline SMC
.152 (.006) .305 (.012)
.102 (.004)
.203 (.008)
1
30BQ015
Bulletin PD-2.490 rev. D 05/01
Voltage Ratings
Part number 30BQ015
VR Max. DC Reverse Voltage (V) 15
V
Max. Working Peak Reverse Voltage (V) 25
RWM
Absolute Maximum Ratings
Parameters 30BQ Units Conditions
I
Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 83 °C, rectangular wave form
F(AV)
4.0 50% duty cycle @ TL = 78 °C, rectangular wave form
I
Max. Peak One Cycle Non-Repetitive 650 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 95 10ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy 9 mJ TJ = 25 °C, IAS = 0.6A, L = 6.6mH
IARRepetitive Avalanche Current 0.6 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated load condition and with rated V
RRM
Electrical Specifications
Parameters 30BQ Units Conditions
VFMMax. Forward Voltage Drop (1) 0.35 V @ 3A
0.40 V @ 6A
0.30 V @ 3A
0.35 V @ 6A
IRMMax. Reverse Leakage Current (1) 4 mA TJ = 25 °C
50 mA TJ = 100 °C
CTMax. Junction Capacitance 1120 pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated VR)
TJ = 25 °C
TJ = 75 °C
VR = rated V
R
applied
Thermal-Mechanical Specifications
Parameters 30BQ Units Conditions
TJMax. Junction Temperature Range - 55 to 125 °C
T
Max. Storage Temperature Range - 55 to 15 0 °C
stg
R
Max. Thermal Resistance, Junction 12 °C/W DC Operation (* See Fig. 4)
thJL
to Lead (2)
R
Max. Thermal Resistance, Junction 46 °C/W DC Operation
thJA
to Ambient
wt Approximate Weight 0.24 g
Case Style SMC Similar DO-214AB
(1) Pulse Width < 300µs, Duty Cycle < 2% (2) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package
2
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