Vishay 30BQ015 Data Sheet

Vishay 30BQ015 Data Sheet

Bulletin PD-2.490 rev. D 05/01

30BQ015

SCHOTTKY RECTIFIER

3 Amp

SMC

Major Ratings and Characteristics

Characteristics

30BQ015

Units

 

 

 

 

IF(AV)

Rectangular

3.0

A

 

waveform

 

 

VRRM

 

15

V

IFSM

@ t p= 5 µs sine

650

A

VF

@1.0Apk,TJ=75°C

0.30

V

 

 

 

 

TJ

range

- 55to125

°C

 

 

 

 

Description/Features

The 30BQ015 surface mount Schottky rectifier has been designedforapplicationsrequiringlowforwarddropandverysmall foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125°C junction temperature. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging,

and reverse battery protection.

125°C TJ operation (VR < 5V)

Optimized for OR-ing applications

Ultra low forward voltage drop

High frequency operation

Guard ring for enhanced ruggedness and long term reliability

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

DeviceMarking: IR3C

2.75 (.108)

 

 

 

 

5.59 (.220)

 

 

 

3.15 (.124)

 

 

 

6.22 (.245)

 

 

 

 

 

 

6.60 (.260)

7.11 (.280)

2.00 (.079)

2.62 (.103)

0.76(.030)

1.52(.060)

.152 (.006)

.305 (.012)

.102 (.004)

.203 (.008)

7.75 (.305)

8.13 (.320)

Outline SMC

Dimensions in millimeters and (inches)

For recommended footprint and soldering techniques refer to Application Note # AN-994

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1

30BQ015

Bulletin PD-2.490 rev. D 05/01

Voltage Ratings

Part number

30BQ015

VR Max. DC Reverse Voltage (V)

15

VRWM Max. Working Peak Reverse Voltage (V)

25

Absolute Maximum Ratings

 

Parameters

30BQ

Units

Conditions

 

 

 

 

 

 

 

 

IF(AV)

Max.AverageForwardCurrent

3.0

A

50%dutycycle@TL=83°C,rectangularwaveform

 

 

4.0

 

50%dutycycle@TL=78°C,rectangularwaveform

IFSM

Max.PeakOneCycleNon-Repetitive

650

A

5µs Sineor3µsRect.pulse

Following any

rated

 

 

 

 

 

load condition

and

 

 

 

 

 

 

SurgeCurrent

95

 

10msSineor6msRect. pulse

with rated VRRM applied

EAS

NonRepetitiveAvalancheEnergy

9

mJ

TJ =25°C,IAS =0.6A,L=6.6mH

 

 

IAR

RepetitiveAvalancheCurrent

0.6

A

Currentdecayinglinearlytozeroin1µsec

 

 

 

 

 

Frequency limited by TJ max. Va = 1.5 x Vr typical

 

Electrical Specifications

 

Parameters

30BQ

Units

Conditions

 

VFM

Max. Forward Voltage Drop (1)

0.35

V

@ 3A

 

TJ = 25 °C

 

 

0.40

V

@ 6A

 

 

 

 

0.30

V

@ 3A

 

TJ = 75 °C

 

 

0.35

V

@ 6A

 

 

 

 

 

 

 

 

 

IRM

Max. Reverse Leakage Current (1)

4

mA

TJ = 25 °C

 

VR = rated VR

 

 

50

mA

TJ = 100 °C

 

 

CT

Max. Junction Capacitance

1120

pF

VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C

LS

Typical Series Inductance

3.0

nH

Measured lead to lead 5mm from package body

dv/dt

Max. Voltage Rate of Change

10000

V/µs

 

 

 

 

(Rated VR)

 

 

 

 

 

Thermal-Mechanical

Specifications

 

 

 

Parameters

 

30BQ

 

Units

Conditions

TJ

Max.JunctionTemperatureRange

-55to125

 

°C

 

Tstg

Max.StorageTemperatureRange

-55to150

 

°C

 

RthJL

Max.ThermalResistance,Junction

12

 

°C/W

DCOperation(*SeeFig.4)

 

to Lead

(2)

 

 

 

 

R

Max.ThermalResistance,Junction

46

 

°C/W

DCOperation

thJA

to Ambient

 

 

 

 

 

wt

ApproximateWeight

 

0.24

 

g

 

 

 

 

 

 

 

 

 

CaseStyle

 

SMC

 

SimilarDO-214AB

(1)Pulse Width < 300µs, Duty Cycle < 2%

(2)Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package

2

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