VISHAY 2N7002K User Manual
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SPICE Device Model 2N7002
ishay Siliconix
N-Channel 60-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
SUBCIRCUIT MODEL SCHEMATIC
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
model. All model parameter values are optimized
gd
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73307
1
S-50261
Rev. A, 21-Feb-05
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SPICE Device Model 2N7002K
ishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition
Simulated
Data
Static
Gate Threshold Voltage V
On-State Drain Current
Drain-Source On-State Resistancea r
Forward Transconductancea g
Diode Forward Voltagea V
Dynamic
Total Gate Charge Qg 0.30 0.40
Gate-Source Charge Qgs 0.11 0.11
Gate-Drain Charge Qgd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
b
a
GS(th)
I
V
D(on)
DS(on)
V
fs
I
SD
V
= VGS, ID = 250 µA
DS
= 5 V, VGS = 10 V 4 A
DS
VGS = 10 V, ID = 500 mA 1.1 1.1
V
= 4.5 V, ID = 200 mA 1.6 1.6
GS
= 10 V, ID = 200 mA 240 550 S
DS
= 200 mA, VGS = 0 V 0.85 0.87 V
S
V
= 10 V, VGS = 4.5 V, ID = 250 mA
DS
1.6 V
0.15 0.15
Measured
Data
Unit
Ω
nC
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Document Number: 73307
S-50261
Rev. A, 21-Feb-05
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