Vishay 2N7002, VQ1000J, VQ1000P, 2N7000, BS170 Schematics

PRODUCT SUMMARY

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

Part Number V

2N7000

2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115
VQ1000J
VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

BS170 5 @ VGS = 10 V 0.8 to 3 0.5

(BR)DSS

Min (V)

60

V

r

Max (W)

DS(on)

5 @ VGS = 10 V 0.8 to 3 0.2

5.5 @ VGS = 10 V 0.8 to 2.5 0.225

(V) ID (A)

GS(th)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage

TO-226AA

(TO-92)

S

G

D

1

2

3

Top View

2N7000

Dual-In-Line

D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage

D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems
D Solid-State Relays

TO-236

(SOT-23)

G

1

S

2

Top View

Marking Code: 72wll
72 = Part Number Code for 2N7002

w = Week Code
ll = Lot Traceability

D

3

D

1

N

N

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

S

1

G

1

NC NC

G

2

S

2

D

2

1

2

3

4

5

6

7

Top View

Plastic: VQ1000J

Sidebraze: VQ1000P

D

4

14

S

13

G

12

11

G

10

S

9

D

8

N

4

4

3

3

N

3

TO-92-18RM

(TO-18 Lead Form)

D

G

S

1

2

3

Top View

BS170

www.vishay.com

11-1

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Single Total Quad

Parameter Symbol 2N7000 2N7002

Drain-Source Voltage V
Gate-Source Voltage—Non-Repetitive V
Gate-Source Voltage—Continuous V

Continuous Drain Current

Continuous Drain Current
(T

= 150_C)

J

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R
Operating Junction and

Storage Temperature Range

Notes
a. Pulse width limited by maximum junction temperature.
b. t

v 50 ms.

p

a

TA= 25_C
TA= 100_C

TA= 25_C
TA= 100_C

GSM

I

P

TJ, T

DS

GS

I

D

DM

thJA

60 60 60 60 60

"40 "40 "30 "25
"20 "20 "20 "20 "20

0.2 0.115 0.225 0.225 0.5

0.13 0.073 0.14 0.14 0.175

0.5 0.8 1 1

D

stg

0.4 0.2 1.3 1.3 2 0.83

0.16 0.08 0.52 0.52 0.8

312.5 625 96 96 62.5 156

VQ1000J VQ1000P

–55 to 150

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Common Source Output Conductance

b

b

b

b

(BR)DSS

r

Dynamic

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

GS(th)

GSS

DSS

I

D(on)

DS(on)

DS(on)

g

fs

g

os

iss
oss
rss

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 1 mA 2.1 0.8 3
VDS = VGS, ID = 0.25 mA 2.0 1 2.5
VDS = 0 V, VGS = "15 V "10
VDS = 0 V, VGS = "20 V "100

VDS = 48 V, VGS = 0 V 1

TC = 125_C

VDS = 60 V, VGS = 0 V 1

TC = 125_C
VDS = 10 V, VGS = 4.5 V 0.35 0.075
VDS = 7.5 V, VGS = 10 V 1 0.5
VGS = 4.5 V, ID = 0.075 A 4.5 5.3

VGS = 5 V, ID = 0.05 A 3.2 7.5

TC = 125_C

VGS = 10 V, ID = 0.5 A 2.4 5 7.5

TJ = 125_C
VDS = 10 V, ID = 0.2 A 100 80
VDS = 5 V, ID = 0.05 A 0.5

VDS = 25 V, VGS = 0 V

f = 1 MHz

f = 1 MHz

70 60 60

5.8 13.5

4.4 9 13.5

22 60 50
11 25 25

2 5 5

VQ1000J/P

Limits

2N7000 2N7002

1000

BS170 Unit

V

A

W

_C/W

_C

V

nA

mA

500

A

W

mS

pF

www.vishay.com

11-2

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

2N7000/2N7002, VQ1000J/P, BS170

W

W

m

W

W

Vishay Siliconix

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

2N7000 2N7002

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Switching

Turn-On Time t
Turn-Off Time t
Turn-On Time t
Turn-Off Time t

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)

Static

Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Common Source Output Conductance

Dynamic

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Time t
Turn-Off Time t
Turn-On Time t
Turn-Off Time t

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 25 W

VDD = 15 V, RL = 25

ID ^0.5 A, V

ID ^ 0.2 A, V

GEN

VDD = 30 V, RL = 150 W

VDD = 30 V, RL = 150

GEN

= 10 V, RG = 25 W

= 10 V, RG = 25 W

7 10
7 10
7 20

11 20

Limits

VQ1000J/P BS170

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

(BR)DSS

GS(th)

GSS

GSS

DSS

DSS

b

b

b

b

I

D(on)

r

DS(on)

g

g

fs

os

iss
oss
rss

VGS = 0 V, ID = 100 mA

VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3

VDS = 0 V, VGS = "10 V "100

TJ = 125_C

VDS = 0 V, VGS = "15 V "10

VDS = 25 V, VGS = 0 V 0.5

VDS = 48 V, VGS = 0 V, TJ = 125_C

VDS = 60 V, VGS = 0 V 10

VDS = 10 V, VGS = 10 V 1 0.5 A

VGS = 5 V, ID = 0.2 A 4 7.5
VGS = 10 V, ID = 0.2 A 2.3 5
VGS = 10 V, ID = 0.3 A 2.3 5.5

TJ = 125_C

VDS = 10 V, ID = 0.2 A 100

VDS = 10 V, ID = 0.5 A 100

VDS =5 V, ID = 0.05 A 0.5

VDS =25 V, VGS = 0 V

f = 1 MHz

f = 1 MHz

d

ON

OFF

ON

OFF

VDD = 15 V, RL = 23 W

VDD = 15 V, RL = 23

ID ^ 0.6 A, V

ID ^ 0.2 A, V

GEN

VDD = 25 V, RL = 125 W

VDD = 25 V, RL = 125

GEN

= 10 V, RG = 25 W

= 10 V, RG = 25 W

70 60 60

"500

500

4.2 7.6

22 60 60
11 25

2 5

7 10
7 10
7 10
7 10

ns

V

nA

mA

W

mS

pF

ns

Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.

Document Number: 70226
S-04279—Rev. F, 16-Jul-01

www.vishay.com

11-3