2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462
PRODUCT SUMMARY
Part Number V
2N/SST5460 0.75 to 6 40 1 –1
2N/SST5461 1 to 7.5 40 1.5 –2
2N/SST5462 1.8 to 9 40 2 –4
FEATURES BENEFITS APPLICATIONS
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) I
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
Min (mA)
DSS
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
TO-226AA
(TO-92)
S
D
G
1
2
3
Top View
2N5460
2N5461
2N5462
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-236
(SOT-23)
1
D
G
3
S
2
Top View
Lead Temperature (
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
1
/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
a
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
2N/SST5460 Series
⁄
W
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Limits
2N/SST5460 2N/SST5461 2N/SST5462
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Gate-Source Voltage V
Gate-Source
Forward Voltage
b
V
(BR)GSS
GS(off)
I
DSS
GSS
D(off)
V
GS(F)
G
GS
IG = 10 mA , VDS = 0 V
VDS = –15 V, ID = –1 mA
VDS = –15 V, VGS = 0 V –1 –5 –2 –9 –4 –16 mA
VGS = 20 V, VDS = 0 V 0.003 5 5 5 nA
TA = 100_C
VDG = –20 V, ID = –0.1 mA 3
VDS = –15 V, VGS = 10 V –5
ID = –0.1 mA 1.3 0.5 4
VDS = –15 V
IG = –1 mA , VDS = 0 V –0.7
ID = –0.2 mA 2.3 0.8 4.5
ID = –0.4 mA 3.8 1.5 6
55 40 40 40
0.75 6
0.0003 1 1 1
7.5 1.8 9
1
mA
pA
V
V
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Common-Source
Output Capacitance
Equivalent Input VDS = –15 V, VGS = 0 V
Equivalent Input
Noise Voltage
Noise Figure NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIB
b. Pulse test: PW v300 ms duty cycle v2%.
g
fs
g
os
C
iss
C
rss
C
oss
e
n
VDS = –15 V, VGS = 0 V
VDS = –15 V, VGS = 0 V
f = 1 kHz
VDS = –15 V, VGS = 0 V
f = 1 MHz
VDS = –15 V, VGS = 0 V
f = 100 Hz
VDS = –15 V, VGS = 0 V
f = 100 Hz, RG = 1 M
BW = 1 Hz
2N 4.5 7 7 7
SST 4.5
1.2
2N 1.5 2 2 2
SST 1.5
2N 15 115 115 115
SST 15
2N 0.2 2.5 2.5 2.5
SST 0.2
1 4 1.5 5 2 6 mS
75 75 75
mS
pF
nV⁄
nV
√Hz
dB
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9-2
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Vishay Siliconix
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
–20
–16
g
–12
fs
I
DSS
–8
– Saturation Drain Current (mA)
–4
DSS
I
0
0246810
gfs @ VDS = –15 V, VGS = 0 V
@ VDS = –15 V, VGS = 0 V
I
DSS
f = 1 kHz
V
– Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics
–2
V
= 1.5 V
GS(off)
–1.6
–1.2
VGS = 0 V
0.2 V
0.4 V
5
g
fs
– Forward Transconductance (mS)
2.5
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1000
800
600
r
DS
g
os
400
– Drain-Source On-Resistance ( Ω )
200
DS(on)
r
0
0246810
rDS @ ID = –100 mA, VGS = 0 V
@ VDS = –15 V, VGS = 0 V
g
os
f = 1 kHz
V
– Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics
–10
V
= 3 V
GS(off)
–8
–6
VGS= 0 V
100
80
60
40
20
0
os
– Output Conductance ( m
S)g
–0.8
– Drain Current (mA)
D
I
–0.4
0
0 –4 –8 –12 –16 –20
VDS – Drain-Source Voltage (V)
Output Characteristics
–0.5
V
= 1.5 V
GS(off)
VGS = 0 V
–0.4
0.2 V
–0.3
–0.2
– Drain Current (mA)
D
I
–0.1
0
0 –0.2 –0.4 –0.6 –0.8 –1
VDS – Drain-Source Voltage (V)
0.4 V
0.6 V
0.8 V
1.0 V
0.6 V
0.8 V
1.0 V
1.2 V
–4
– Drain Current (mA)
D
I
–2
0
0 –4 –8 –12 –16 –20
VDS – Drain-Source Voltage (V)
Output Characteristics
–2
V
= 3 V
GS(off)
–1.6
–1.2
–0.8
– Drain Current (mA)
D
I
–0.4
0
0 –0.2 –0.4 –0.6 –0.8 –1
VDS – Drain-Source Voltage (V)
VGS= 0 V
0.5 V
0.5 V
1.0 V
1.5 V
2.0 V
1.0 V
1.5 V
2.0 V
2.5 V
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-3
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–5
V
= 1.5 V VDS = –15 VV
GS(off)
–4
–3
–2
– Drain Current (mA)
D
I
–1
TA = –55_C
25_C
125_C
0
0 0.4 0.8 1.2 1.6 2
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
1000
TA = 25_C
800
V
= 1.5 V
Transfer Characteristics
600
GS(off)
–10
GS(off)
–8
–6
–4
– Drain Current (mA)
D
I
–2
0
012345
10 nA
1 nA
100 pA
I
GSS
Transfer Characteristics
= 3 VVDS = –15 V
TA = –55_C
25_C
125_C
VGS – Gate-Source Voltage (V)
Gate Leakage Current
TA = 125_C
@ 125_C
–5 mA
–1 mA
400
– Drain-Source On-Resistance ( Ω )
200
DS(on)
r
0
–0.1 –1 –10
3 V
4 V
ID – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
5
V
= 1.5 V VDS = –15 V
GS(off)
4
TA = –55_C
3
2
1
– Forward Transconductance (mS)
fs
g
0
0 0.4 0.8 1.2 1.6 2
25_C
125_C
V
– Gate-Source Voltage (V)
GS
f = 1 kHz
10 p A
– Gate Leakage
G
I
0.1 pA
TA = 25_C
1 pA
0 –30 –40–20–10 –50
Transconductance vs. Gate-Source Voltage
5
V
GS(off)
4
3
2
125_C
1
– Forward Transconductance (mS)
fs
g
0
012345
–5 mA
VDG – Drain-Gate Voltage (V)
= 3 VVDS = –15 V
TA = –55_C
25_C
V
– Gate-Source Voltage (V)
GS
I
@ 25_C
GSS
f = 1 kHz
–0.1 mA
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9-4
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Vishay Siliconix
100
V
= 1.5 V
80
60
– Voltage Gain
40
V
A
20
V
= 3 V
GS(off)
Assume VDD = –15 V, VDS = –5 V
A
0
–0.01 –0.1 –1
V
+
1 ) RLg
g
GS(off)
fsRL
os
ID – Drain Current (mA)
R
L
+
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
8
6
Circuit Voltage Gain vs. Drain Current
4
– Input Capacitance (pF)C
iss
2
0
0 4 8 12 16 20
–5 V
–15 V
– Gate-Source Voltage (V)
V
GS
10 V
I
D
Common-Source Forward Transconductance
vs. Drain Current
10
V
= 3 V
GS(off)
TA = –55_C
1
125_C
– Forward Transconductance (µS)
fs
g
0.1
–0.1 –1 –10
ID – Drain Current (mA)
25_C
VDS = –15 V
f = 1 kHz
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
2.5
–5 V
– Reverse Feedback Capacitance (pF)C
rss
0
0 4 8 12 16 20
VGS – Gate-Source Voltage (V)
–15 V
Equivalent Input Noise Voltage vs. Frequency
100
VDS = –15 V
10
n – Noise Voltage nV / Hz
e
1
10 100 1 k 100 k10 k
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
ID = –0.1 mA
ID = –1 mA
f – Frequency (Hz)
Output Conductance vs. Drain Current
20
V
= 3 V
GS(off)
16
TA = –55_C
12
25_C
8
– Output Conductance (µS)
os
4
g
0
–0.1 –1 –10
125_C
VDS = –15 V
f = 1 kHz
ID – Drain Current (mA)
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9-5
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