Vishay SST5460, SST5461, SST5462, 2N5460, 2N5461 Schematics
...
2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462
PRODUCT SUMMARY
Part Number V
2N/SST5460 0.75 to 6 40 1 –1
2N/SST5461 1 to 7.5 40 1.5 –2
2N/SST5462 1.8 to 9 40 2 –4
FEATURES BENEFITS APPLICATIONS
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) I
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
Min (mA)
DSS
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
TO-226AA
(TO-92)
S
D
G
1
2
3
Top View
2N5460
2N5461
2N5462
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-236
(SOT-23)
1
D
G
3
S
2
Top View
Lead Temperature (
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
1
/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
a
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
2N/SST5460 Series
⁄
W
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Limits
2N/SST5460 2N/SST5461 2N/SST5462
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Gate-Source Voltage V
Gate-Source
Forward Voltage
b
V
(BR)GSS
GS(off)
I
DSS
GSS
D(off)
V
GS(F)
G
GS
IG = 10 mA , VDS = 0 V
VDS = –15 V, ID = –1 mA
VDS = –15 V, VGS = 0 V –1 –5 –2 –9 –4 –16 mA
VGS = 20 V, VDS = 0 V 0.003 5 5 5 nA
TA = 100_C
VDG = –20 V, ID = –0.1 mA 3
VDS = –15 V, VGS = 10 V –5
ID = –0.1 mA 1.3 0.5 4
VDS = –15 V
IG = –1 mA , VDS = 0 V –0.7
ID = –0.2 mA 2.3 0.8 4.5
ID = –0.4 mA 3.8 1.5 6
55 40 40 40
0.75 6
0.0003 1 1 1
7.5 1.8 9
1
mA
pA
V
V
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Common-Source
Output Capacitance
Equivalent Input VDS = –15 V, VGS = 0 V
Equivalent Input
Noise Voltage
Noise Figure NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIB
b. Pulse test: PW v300 ms duty cycle v2%.
g
fs
g
os
C
iss
C
rss
C
oss
e
n
VDS = –15 V, VGS = 0 V
VDS = –15 V, VGS = 0 V
f = 1 kHz
VDS = –15 V, VGS = 0 V
f = 1 MHz
VDS = –15 V, VGS = 0 V
f = 100 Hz
VDS = –15 V, VGS = 0 V
f = 100 Hz, RG = 1 M
BW = 1 Hz
2N 4.5 7 7 7
SST 4.5
1.2
2N 1.5 2 2 2
SST 1.5
2N 15 115 115 115
SST 15
2N 0.2 2.5 2.5 2.5
SST 0.2
1 4 1.5 5 2 6 mS
75 75 75
mS
pF
nV⁄
nV
√Hz
dB
www.vishay.com
9-2
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
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