2N4401
Vishay Semiconductors
formerly General Semiconductor
Document Number 88117 www.vishay.com
08-May-02 1
New Product
Small Signal Transistor (NPN)
Features
• NPN Silicon Epitaxial Transistor for switching and
amplifier applications.
• As complementary type, the PNP transistor
2N4403 is recommended.
• On special request, this transistor is also manufactured in the pin configuration TO-18.
• This transistor is also available in the SOT-23 case
with the type designation MMBT4401,
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Emitter V oltage V
CEO
40 V
Collector-Base V oltage V
CBO
60 V
Emitter-Base V oltage V
EBO
6.0 V
Collector Current I
C
600 mA
Power Dissipation at T
A
= 25°C
P
tot
625 mW
Derate above 25°C 5.0 mW/°C
Power Dissipation at T
C
= 25°C
P
tot
1.5 mW
Derate above 25°C 12 mW/°C
Thermal Resistance Junction to Ambient Air R
ΘJA
200 °C/W
Thermal Resistance Junction to Case R
ΘJC
83.3 °C/W
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–55 to +150 °C
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
0.181 (4.6)
min. 0.492 (12.5)
0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max.
∅
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
2N4401
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com Document Number 88117
2 08-May-02
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage V
(BR)CBO
IC= 0.1 mA, IE= 0 60 ——V
Collector-Emitter Breakdown Voltage
(1)
V
(BR)CEO
IC= 1 mA, IB= 0 40 ——V
Emitter-Base Breakdown Voltage V
(BR)EBO
IE= 0.1 mA, IC= 0 6.0 ——V
Collector-Emitter Saturation Voltage V
CEsat
IC= 150 mA, IB= 15 mA ——0.40
V
IC= 500 mA, IB= 50 mA ——0.75
Base-Emitter Saturation Voltage V
BEsat
IC= 150 mA, IB= 15 mA 0.75 — 0.95
V
IC= 500 mA, IB= 50 mA ——1.20
Collector Cutoff Current I
CEV
VEB= 0.4 V , V
CE
= 35 V ——100 nA
Base Cutoff Current I
BEV
VEB= 0.4 V , V
CE
= 35 V ——100 nA
V
CE =
1 V, IC= 0.1 mA 20 ——
V
CE =
1 V, IC= 1 mA 40 ——
DC Current Gain h
FE
V
CE =
1 V, IC= 10 mA 80 ———
V
CE =
1 V, IC= 150 mA 100 — 300
V
CE =
2 V, IC= 500 mA 40 ——
Input Impedance h
ie
V
CE =
10 V, IC= 1 mA
1.0 — 15 kΩ
f = 1 kHz
Voltage Feedback Ratio h
re
V
CE =
10 V, IC= 1 mA
0.1 • 10
-4
— 8 • 10
-4
—
f = 1 kHz
Current Gain-Bandwidth Product f
T
VCE= 5 V, IC= 20 mA
250 ——MHz
f = 100 MHz
Collector-Base Capacitance C
CBO
VCB= 5 V, IE= 0,
——6.5 pF
f = 1.0 MHz
Emitter-Base Capacitance C
EBO
VCB= 0.5 V, IC= 0,
——30 pF
f = 1.0 MHz
Small Signal Current Gain h
fe
VCE= 10 V, IC= 1 mA,
40 — 500 —
f = 1 kHz
Output Admittance h
oe
VCE= 10 V, IC= 1 mA,
1.0 — 30
µS
f = 1 kHz
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