Vishay SST4391, SST4392, SST4393, 2N4391, 2N4392 Schematics

2N/PN/SST4391 Series

Vishay Siliconix

N-Channel JFETs

2N4391 PN4391 SST4391
2N4392 PN4392 SST4392
2N4393 PN4393 SST4393

PRODUCT SUMMARY

Part Number V

2N/PN/SST4391
2N/PN/SST4392 –2 to –5 60 5 4
2N/PN/SST4393 –0.5 to –3 100 5 4

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 4391<30 
D Fast Switching—tON: 4 ns
D High Off-Isolation: I

Leakage

D Low Capacitance: < 3.5 pF
D Low Insertion Loss

GS(off)

–4 to –10

D(off)

(V)

with Low

I

r

Max ()

DS(on)

30 5 4

Typ (pA) tON Typ (ns)

D(off)

D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering

D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Commutators

DESCRIPTION

The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.

TO-206AA

(TO-18)

S

1

23

D

Top View

2N4391
2N4392
2N4393

G and Case

TO-226AA

D

S

G

Top View

(TO-92)

1

2

3

PN4391
PN4392
PN4393

The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.

TO-236

(SOT-23)

1

D

G

3

S

2

Top View

SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*

*Marking Code for TO-236

For applications information see AN104 and AN106

.

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-1

2N/PN/SST4391 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:

(2N/PN Prefixes) –40 V. . . . . . . . . . . . . . . . . . .

(SST Prefix) –35 V. . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature 300 _C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature : (2N Prefix) –65 to 200 _C. . . . . . . . . . . . . . . . . .

(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .

Operating Junction Temperature :

Power Dissipation : (2N Prefix)

Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C

(2N Prefix) –55 to 200 _C. . . . . . . . . . . . . . . . . .

(PN/SST Prefixes) –55 to 150 _C. . . . . . . . . . .

(PN/SST Prefixes)

a

(TC = 25_C) 1800 mW. . . . . . . . . .

b

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391 4392 4393

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source

Gate-Source
Cutoff Voltage

Saturation Drain

b

b

Current

Current

Gate Reverse Current I

Gate Operating Current I

Drain Cutoff Current I

Drain-Source
On-Voltage

On-Voltage

Drain-Source
On-Resistance

Gate-Source IG = 1 mA

Gate-Source
Forward Voltage

V

(BR)GSS

V

GS(off)

I

DSS

DSS DS GS

GSS

GSS

G

D(off) 2N: V

V

DS(on)

DS(on) GS

r

DS(on)

V

GS(F)

IG = –1 A, VDS = 0 V

VDS = 20 V 2N/PN: ID = 1 nA
VDS = 15 V SST: ID = 10 nA

VDS = 20 V, VGS = 0 V

VGS = –20 V

VGS = –20 V

V

= 0 V

DS

VDG = 15 V, ID = 10 mA –5

VDS = 20 V

SST VDS = 10 V, VGS = –10 V 5 100 100 100 pA

VDS = 20 V
TA = 150_C

T = 150_C

VDS = 20 V

TA = 100_C

T = 100_C

VDS = 10 V

= 125_C

T

A

VGS = 0 V

VGS = 0 V, ID = 1 mA 30 60 100

IG = 1 mA
V

= 0 V

DS

–55 –40 –40 –40

–4 –10 –2 –5 –0.5 –3

2N 50 150 25 75 5 30
PN 50 150 25 100 5 60

SST 50 25 5

2N/SST –5 –100 –100 –100

PN –5 –1000 –1000 –1000

2N: TA = 150_C

PN: TA = 100_C

SST: TA = 125_C

2N: VGS = –5 V 5 100
2N: VGS = –7 V 5 100

2N: VGS = –12 V 5 100

PN: VGS = –5 V 0.005 1
PN: VGS = –7 V 0.005 1

PN: VGS = –12 V 0.005 1

= –5 V 13 200

GS

2N: VGS = –7 V 13 200

2N: VGS = –12 V 13 200

PN: VGS = –5 V 1 200
PN: VGS = –7 V 1 200

PN: VGS = –12 V 1 200

SST: VGS = –10 V 3

ID = 3 mA 0.25 0.4
ID = 6 mA 0.3 0.4

ID = 12 mA 0.35 0.4

PN/SST 0.7

–13 –200 –200 –200

–1 –200 –200 –200
–3

2N 0.7 1 1 1

350 mW. . . . . . . . . . . . . . .

V

mA

pA

nA

pA

nA

nA

nA

V



V

www.vishay.com

7-2

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

2N/PN/SST4391 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391 4392 4393

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Drain-Source
On-Resistance

Common-Source
Input Capacitance

Input Capacitance

Common-Source
Reverse Transfer
Capacitance

Equivalent Input
Noise Voltage

Switching

Turn-On Time

Turn-Off Time

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 s duty cycle v3%.

g

g

r

DS(on)

C

C

e

t

d(on)

t

d(off)

fs

os

iss

iss

rss

rss

n

t

r

t

f

VDS = 20 V, ID = 1 mA, f = 1 kHz

VGS = 0 V, ID = 0 mA , f = 1 kHz 30 60 100

VDS = 20 V, VGS = 0 V

f = 1 MHz

f = 1 MHz

2N: VGS = –5 V 3.3 3.5
2N: VGS = –7 V 3.2 3.5

2N: VGS = –12 V 2.8 3.5

VDS = 0 V
f = 1 MHz

f = 1 MHz

VDS = 10 V, ID = 10 mA

VDD = 10 V

V

GS(H)

See Switching Circuit

See Switching Circuit

PN: VGS = –5 V 3.5 5

PN: VGS = –7 V 3.4 5
PN: VGS = –12 V 3.0 5
SST: VGS = –5 V 3.6
SST: VGS = –7 V 3.5

SST: VGS = –12 V 3.1

f = 1 kHz

= 0 V

2N 12 14 14 14
PN 12 16 16 16

SST 13

2N/PN 2 15 15 15

SST 2

2N/PN 2 5 5 5

SST 2

2N/PN 6 20 35 50

SST 6

2N/PN 13 15 20 30

SST 13

6 mS

25

3

S



pF

nV⁄

√Hz

ns

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-3

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

100

80

vs. Gate-Source Cutoff Voltage

rDS @ ID = 1 mA, VGS = 0 V
I

@ VDS = 20 V, VGS = 0 V

DSS

200

I

DSS

– Saturation Drain Current (mA)

160

100

80

On-Resistance vs. Drain Current

TA = 25_C

I

r

60

DS

DSS

40

– Drain-Source On-Resistance ( Ω )

20

DS(on)

r

0

0 –10

–2 –4 –6 –8

– Gate-Source Cutoff Voltage (V)

V

GS(off)

On-Resistance vs. Temperature

200

ID = 1 mA

changes X 0.7%/_C

r

DS

160

120

V

GS(off)

80

– Drain-Source On-Resistance ( Ω )

40

DS(on)

r

0

–35

–55 25 125

5 45 65 105 –2 –4 –6 –8

–15 85

TA – Temperature (_C)

= –2 V

–4 V

–8 V

120

80

40

0

V

= –2 V

GS(off)

–4 V

–8 V

– Drain-Source On-Resistance ( Ω )

DS(on)

r

60

40

20

0

1 10 100

I

– Drain Current (mA)

D

5

4

3

Turn-On Switching

tr approximately independent of I
VDD = 5 V, RG = 50 W
V

= –10 V

GS(L

)

t

r

t

@

d(on)

I

= 12 mA

D

2

Switching Time (ns)

t

@

d(on)

I

= 3 mA

1

D

0

0 –10

V

– Gate-Source Cutoff Voltage (V)

GS(off)

D

30

24

18

12

Switching Time (ns)

6

0

010

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7-4

Turn-Off Switching

t

independent of device V

d(off)

VDD = 5 V, V

GS(L)

= –10 V

GS(off

30

)

Capacitance vs. Gate-Source Voltage

f = 1 MHz
V

= 0 V

DS

24

18

12

Capacitance (pF)

t

d(off)

V

= –2 V

GS(off)

t

f

6

V

= –8 V

GS(off)

0

2468 –4 –8 –12 –16

– Drain Current (mA)

I

D

0

– Gate-Source Voltage (V)

V

GS

C

iss

C

rss

–20

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

2N/PN/SST4391 Series

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Vishay Siliconix

100

Noise Voltage vs. Frequency

VDS = 10 V

10

ID = 1 mA

en – Noise Voltage nV/ Hz

1

10 100 1 k 100 k10 k

10 nA

1 nA

ID = 10 mA

Gate Leakage Current

TA = 125_C

100 pA

10 pA

– Gate Leakage)

G

I

TA = 25_C

10 mA

1 pA

ID = 10 mA

1 mA

I

@ 125_C

GSS

I

GSS

1 mA

@ 25_C

Forward Transconductance and Output onductance

vs. Gate-Source Cutoff Voltage*

50

gfs and gos @ VDS = 20 V

= 0 V, f = 1 kHz

V

GS

40

g

30

fs

g

os

20

10

– Forward Transconductance (mS)

fs

g

0

0

–2 –10

V

GS(off)

–4 –6 –8

– Gate-Source Cutoff Voltage (V)f – Frequency (Hz)

Common-Gate Input Admittance

100

VDG = 10 V
I

= 10 mA

(mS)

D

= 25_C

T

A

10

1

g

ig

b

ig

500

400

200

200

100

0

gos – Output Conductance (µS)

0.1 pA
030

6 121824

Common-Gate Forward Admittance Common-Gate Reverse Admittance

100

VDG = 10 V
I

= 10 mA

D

= 25_C

T

A

10

(mS)

1

0.1
100 1000200 500

Document Number: 70241
S-04028—Rev. F, 04-Jan-01

I

@ I

G(on)

D

0.1
100 1000200 500

VDG – Drain-Gate Voltage (V)

–g

fg

10

VDG = 10 V
I

= 10 mA

D

= 25_C

T

A

b

fg

1.0

g

fg

(mS)

f – Frequency (MHz)

–b

rg

–g

rg

0.1

0.01
100 1000200 500

f – Frequency (MHz) f – Frequency (MHz)

+g

rg

www.vishay.com

7-5

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

100

Common-Gate Output Admittance

VDG = 10 V
I

= 10 mA

D

= 25_C

T

A

b

og

100

10

g

(mS)

og

10

1

– Forward Transconductance (mS)

fs

g

0.1
100 1000200 500

1

0.1 1.0 10

f – Frequency (MHz)

100

80

60

V

Output Characteristics

= –4 V

GS(off)

VGS = 0 V

100

80

60

–0.5 V

40

– Drain Current (mA)

D

I

20

0

010

2468

V

– Drain-Source Voltage (V)

DS

–1.0 V
–1.5 V

–2.0 V

–2.5 V

40

– Drain Current (mA)

D

I

20

0

0 –5

Transconductance vs. Drain Current

V

GS(off)

= –2 V

VDS = 10 V
f = 1 kHz

TA = –55_C

25_C

125_C

– Drain Current (mA)

I

D

Transfer Characteristics

V

= –4 V

GS(off)

TA = –55_C

25_C

125_C

–1 –2 –3 –4

V

– Gate-Source Voltage (V)

GS

VDS = 20 V

SWITCHING TIME TEST CIRCUIT

4391 4392 4393

V
RL*
I

D(on)

GS(L)

–12 V –7 V –5 V
800  1600  3000 
12 mA 6 mA 3 mA

*Non-inductive

INPUT PULSE SAMPLING SCOPE

Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz

See Typical Characteristics curves for changes.

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7-6

Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF

V

GS(L)

V

GS(H)

V

IN

Scope

V

DD

1 kΩ

51 Ω

51 Ω

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

R

L

OUT