Vishay 25TTS...SPbF High Voltage Series Data Sheet

25TTS...SPbF High Voltage Series

Vishay High Power Products

Surface Mountable Phase

Control SCR, 16 A

Anode

2

DESCRIPTION/FEATURES

The 25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology

D2PA K

Cathode

3

Gate

used has reliable operation up to 125 °C junction
temperature.

1

Typical applications are in input rectification (soft start) and

PRODUCT SUMMARY

VT at 16 A < 1.25 V

I

TSM

V

RRM

300 A

800 to 1600 V

these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper

Aluminum IMS, R

Aluminum IMS with heatsink, R

Note

•T

= 55 °C, TJ = 125 °C, footprint 300 mm

A

= 15 °C/W 8.5 13.5

thCA

= 5 °C/W 16.5 25.0

thCA

2

3.5 5.5

Available

RoHS*

COMPLIANT

A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

RRM/VDRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Sinusoidal waveform 16

25

800 to 1600 V

300 A

16 A, TJ = 25 °C 1.25 V

- 40 to 125 °C

A

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

25TTS08SPbF 800 800

25TTS12SPbF 1200 1200

25TTS16SPbF 1600 1600

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94383 For technical questions, contact: [e-mail]
Revision: 06-Aug-08 1

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

,

mA

10

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25TTS...SPbF High Voltage Series

Vishay High Power Products

Surface Mountable Phase

Control SCR, 16 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

T(TO)

H

L

t

TC = 93 °C, 180° conduction half sine wave 16

25

10 ms sine pulse, rated V

applied 300

RRM

10 ms sine pulse, no voltage reapplied 350

10 ms sine pulse, rated V

applied 450

RRM

10 ms sine pulse, no voltage reapplied 630

16 A, TJ = 25 °C 1.25 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 10

T

J

25TTS08, 25TTS12

25TTS16 100 150

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V,
resistive load, initial I

= 1 A

T

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

12.0 mΩ

1.0 V

0.5

- 100

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 10 °C 60

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

= 25 °C 45

J

= 125 °C 20

J

mAAnode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5

Maximum required DC gate voltage
to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.25

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

110

4

µsTypical reverse recovery time t

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Document Number: 94383

2 Revision: 06-Aug-08

25TTS...SPbF High Voltage Series

Surface Mountable Phase

Vishay High Power Products

Control SCR, 16 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Soldering temperature T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Approximate weight

Marking device Case style D

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

S

R

thJC

R

thJA

For 10 s (1.6 mm from case) 240

DC operation 1.1

(1)

2

PAK (SMD-220)

- 40 to 125

40

2g

0.07 oz.

25TTS08S

25TTS12S

25TTS16S

°C

°C/W

Document Number: 94383 For technical questions, contact: [e-mail]
Revision: 06-Aug-08 3

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25TTS...SPbF High Voltage Series

Vishay High Power Products

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

0 5 10 15 20

Fig. 1 - Current Rating Characteristics

130

120

110

100

25TTS.. Serie s
R ( DC ) = 1.1 °C/ W

thJC

Conduction Angle

30°

60°

90°

120°

180°

Averag e On-state Current (A)

25TTS. . Se r i e s
R (DC) = 1.1 °C/W

thJC

Conduc tion Period

Surface Mountable Phase

Control SCR, 16 A

35

30

25

20

15

10

Maximum Average On-state Power Loss (W)

350

300

250

DC
180°
120°

90°

60°

30°

RM S Li mit

Conduction Period

5

0

0 5 10 15 20 25 30

Average On-state Current (A)

25TTS. . Se r i e s
T = 125°C

J

Fig. 4 - On-State Power Loss Characteristics

At Any Rat ed Loa d Cond ition And With

Ra t ed V Ap p lied Follow ing Surg e .

RRM

Init ia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

30°

60°

90°

120°

180°

DC

90

80

Maximum Allowable Case Temperature (°C)

0 5 10 15 20 25 30

Average On-state Current (A)

Fig. 2 - Current Rating Characteristics

25

180°
120°

20

15

10

5

Maximum Average On-state Power Loss (W)

0

90°
60°
30°

RM S Li m i t

Conduction Angle

25TTS. . Se r i e s
T = 125°C

J

048121620

Average On-sta te Current (A)

Fig. 3 - On-State Power Loss Characteristics

ine Wave On-sta te Current (A)

200

25TTS. . Se r ie s

Pe a k Ha lf S

150

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

400

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Cond uc tion Ma y Not Be Mainta ined.

350

300

250

200

150

2 5 TTS. . Se ri e s

Pe ak Ha lf Sine Wave On-sta te Current (A)

100

0.01 0.1 1

Pulse Tra in D u ra t io n ( s)

Init ia l T = 125°C

No Voltage Reapplied
Rate d V Reapp lied

J

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

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Document Number: 94383

4 Revision: 06-Aug-08

25TTS...SPbF High Voltage Series

Surface Mountable Phase

Vishay High Power Products

Control SCR, 16 A

1000

100

T = 2 5 ° C

J

10

Insta n tan eous On-sta t e Curre nt ( A)

1

012345

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

10

thJC

1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

0.1

Si n g l e Pu ls e

T = 125°C

J

2 5TTS. . Se r i e s

Steady State Value
(DC Opera tion)

25TTS.. Series

Transie nt Th erm al Imp ed anc e Z (°C/ W)

0.01

0.0001 0.001 0.01 0.1 1 10

Squa re Wave Pulse Dura tio n (s)

Fig. 8 - Gate Characteristics

100

Rectangular gate pulse

a)Recommend ed load line for

rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rat ed di/ dt: 10 V, 65 ohm s

10

tr = 1 µs, tp >= 6 µs

TJ = - 1 0 ° C

TJ = 2 5 ° C

T

1

VGD

Instantaneous Gate Voltage (V)

IGD

0.1

0.001 0.01 0. 1 1 10 100

J = 125 °C

2 5 TTS. . Se r i e s

Instantaneous Gate Current (A)

Fig. 9 - Thermal Impedance Z

(b)

(a)

thJC

(1) PGM = 40 W, t p = 1 m s
(2) PGM = 20 W, t p = 2 m s
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms

(2)

(3)

(4)

Frequenc y Limited b y PG(AV)

Characteristics

(1)

Document Number: 94383 For technical questions, contact: [e-mail]

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Revision: 06-Aug-08 5

25TTS...SPbF High Voltage Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

25 T T S 12 S TRL PbF

1

- Current rating (25 = 25 A)

2

- Circuit configuration:

- Package:

3

- Type of silicon:

4

- Voltage rating = Voltage code x 100 = V

5

- S = TO-220 D2PAK (SMD-220) version

6

-

7

-

8

Surface Mountable Phase

Control SCR, 16 A

51324678

T = Single thyristor

T = TO-220AC

Standard recovery rectifier

None = Tube

TRL = Tape and reel (left oriented)TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

None = Standard production

PbF = Lead (Pb)-free

RRM

08 = 800 V
12 = 1200 V
16 = 1600 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95046

Part marking information http://www.vishay.com/doc?95054

Packaging information http://www.vishay.com/doc?95032

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 06-Aug-08

Document Number: 94383

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

D2PAK

Conforms to JEDEC outline D

(2)(3)

E

(3)

L1

D

L2

2 x

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

4

132

BB

e

2

H

2 x b2

2 x b

0.010

PAK (SMD-220)

A

Detail A

(2)

C

MM

A

Lead tip

B

A

c2

AA

A

c

M

± 0.004

B

Gauge

0° to 8°

plane

L3

B

L

L4

Detail “A”

Rotated 90 °CW

Scale: 8:1

(E)

E1

View A - A

A1

(3)

(D1)

17.90 (0.70)

15.00 (0.625)

2.32

(0.08)

Plating

Seating

plane

2.64 (0.103)

2.41 (0.096)

(3)

H

B

Pad layout

11.00
MIN.

(0.43)

MIN.

(4)

b1, b3

(c)

(b, b2)

Section B - B and C - C

Scale: None

9.65

(0.38)

3.81

(0.15)

c1

MIN.

MIN.

Base
Metal

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5 M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Datum A and B to be determined at datum plane H

(6)

Controlling dimension: inch

(7)

Outline conforms to JEDEC outline TO-263AB

Document Number: 95046 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 05-Dec-08 For technical questions concerning module products, contact: [e-mail]

1

D2PAK

Part Marking Information

Vishay High Power Products

Assembly
lot code

xxxxxxS

V PYWWXA

8024

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A

Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000

Document Number: 95054 For technical questions concerning discrete products, contact: [e-mail]
Revision: 17-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1

D2PAK

TAPE AND REEL INFORMATION in millimeters (inches)

P

2

Ø 1.55 ± 0.05

Ø 1.6 ± 0.1

R 0.3

TYP.

2.0 ± 0.1

Y

See note (5)

C

2.17 ± 0.1

P

0

4.0 ± 0.1

See note (1)

Packaging Information

Vishay High Power Products

C

1.75 ± 0.1

C

F

11.50 ± 0.1

1.57 ± 0.1

See note (5)

C

W

24.00 ± 0.3

Y

P

1

16.00 ± 0.1

0.35 ± 0.05

0.12 MAX.

C

1.20

L

4.90 ± 0.1

Section Y - Y

K

0

A

0

10.50 ± 0.1

2

B

10.25 ± 0.1

C

C

0

B

15.80 ± 0.1

C

Notes

(1)

10 sprocket hole pitch cumulative tolerance ± 0.02

(2)

Camber not to exceed 1 mm in 100 mm

(3)

Material: conductive black styrenic alloy

(4)

K0 measured from a plane on the inside bottom of the pocket to the top surface of the carrier

(5)

Measured from centerline of sprocket hole to centerline of pocket

(6)

Vendor: (optional)

(7)

Must also meet requirements of EIA standard # EIA-481A taping of surface mount components for automatic placement

(8)

Surface resistivity of molded material must measure less or equal to 106 Ω per square. Measured in accordance to procedure given in
ASTM D-257 and ASTM D-991

(9)

Total length per reel must be 45 m

(10)

critical

C

Document Number: 95032 For technical questions concerning discrete products, contact: [e-mail]
Revision: 17-Apr-08 For technical questions concerning module products, contact: [e-mail]

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1