Vishay 25TTS...SPbF High Voltage Series Data Sheet

25TTS...SPbF High Voltage Series

Vishay High Power Products

Surface Mountable Phase

Control SCR, 16 A

Anode

2

DESCRIPTION/FEATURES

The 25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology

D2PA K

Cathode

3

Gate

used has reliable operation up to 125 °C junction
temperature.

1

Typical applications are in input rectification (soft start) and

PRODUCT SUMMARY

VT at 16 A < 1.25 V

I

TSM

V

RRM

300 A

800 to 1600 V

these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper

Aluminum IMS, R

Aluminum IMS with heatsink, R

Note

•T

= 55 °C, TJ = 125 °C, footprint 300 mm

A

= 15 °C/W 8.5 13.5

thCA

= 5 °C/W 16.5 25.0

thCA

2

3.5 5.5

Available

RoHS*

COMPLIANT

A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

RRM/VDRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Sinusoidal waveform 16

25

800 to 1600 V

300 A

16 A, TJ = 25 °C 1.25 V

- 40 to 125 °C

A

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

25TTS08SPbF 800 800

25TTS12SPbF 1200 1200

25TTS16SPbF 1600 1600

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94383 For technical questions, contact: [e-mail]
Revision: 06-Aug-08 1

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

,

mA

10

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25TTS...SPbF High Voltage Series

Vishay High Power Products

Surface Mountable Phase

Control SCR, 16 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

T(TO)

H

L

t

TC = 93 °C, 180° conduction half sine wave 16

25

10 ms sine pulse, rated V

applied 300

RRM

10 ms sine pulse, no voltage reapplied 350

10 ms sine pulse, rated V

applied 450

RRM

10 ms sine pulse, no voltage reapplied 630

16 A, TJ = 25 °C 1.25 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 10

T

J

25TTS08, 25TTS12

25TTS16 100 150

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V,
resistive load, initial I

= 1 A

T

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

12.0 mΩ

1.0 V

0.5

- 100

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 10 °C 60

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

= 25 °C 45

J

= 125 °C 20

J

mAAnode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5

Maximum required DC gate voltage
to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.25

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

110

4

µsTypical reverse recovery time t

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94383

2 Revision: 06-Aug-08

25TTS...SPbF High Voltage Series

Surface Mountable Phase

Vishay High Power Products

Control SCR, 16 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Soldering temperature T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Approximate weight

Marking device Case style D

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

S

R

thJC

R

thJA

For 10 s (1.6 mm from case) 240

DC operation 1.1

(1)

2

PAK (SMD-220)

- 40 to 125

40

2g

0.07 oz.

25TTS08S

25TTS12S

25TTS16S

°C

°C/W

Document Number: 94383 For technical questions, contact: [e-mail]
Revision: 06-Aug-08 3

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