Vishay 25TTS..S Data Sheet
Bulletin I2117 rev. D 12/98
SAFE
IR
Series
25TTS..S
SURFACE MOUNTABLE
PHASE CONTROL SCR
Description/Features
The 25TTS..S SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reliable operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
TA = 55°C, TJ = 125°C, footprint 300mm
= 15°C/W 8.5 13.5 A
thCA
= 5°C/W 16.5 25.0
thCA
2
Major Ratings and Characteristics
3.5 5.5
V
I
TSM
V
< 1.25V @ 16A
T
= 300A
800 to 1600V
RRM
Characteristics 25TTS..S Units
I
Sinusoidal 16 A
T(AV)
waveform
I
RMS
V
V
/
RRM
DRM
I
TSM
V
@ 16 A, TJ = 25°C 1.25 V
T
dv/dt 500 V/µs
di/dt 150 A/µs
T
J
25 A
up to 1600 V
300 A
- 40 to 125 °C
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D2 PAK (SMD-220)
1
25TTS..S SAFEIR Series
Bulletin I2117 rev. D 12/98
Voltage Ratings
V
, maximum V
RRM
Part Number
peak reverse voltage peak direct voltage 125°C
VVmA
25TTS08S 800 800 10
25TTS12S 1200 1200
25TTS16S 1600 1600
Absolute Maximum Ratings
Parameters 25TTS..S Units Conditions
I
Max. Average On-state Current 16 A @ TC = 93° C, 180° conduction half sine wave
T(AV)
I
Max. RMS On-state Current 25
RMS
I
Max. Peak One Cycle Non-Repetitive 30 0 10ms Sine pulse, rated V
TSM
Surge Current 350 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 450 A2s 10ms Sine pulse, rated V
630 10ms Sine pulse, no voltage reapplied
2
I
√t Max. I2√t for fusing 6300 A2√s t = 0.1 to 10ms, no voltage reapplied
VTMMax. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C
r
On-state slope resistance 12.0 mΩ T
t
V
Threshold Voltage 1.0 V
T(TO)
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 10 TJ = 125 °C
I
Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
H
-- 100 mA 25TTS08S, 25TTS12S
100 150 25TTS16S
IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs
di/dt Max. Rate of Rise of turned-on Current 15 0 A/µs
= 125°C
J
, maximum I
DRM
applied
RRM
applied
RRM
VR = rated V
RRM
/ V
RRM/IDRM
DRM
2
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25TTS..S SAFEIR Series
Bulletin I2117 rev. D 12/98
Triggering
Parameters 25TTS..S Units Conditions
PGMMax. peak Gate Power 8.0 W
P
Max. average Gate Power 2.0
G(AV)
+ I
Max. paek positive Gate Current 1.5 A
GM
Max. paek negative Gate Voltage 10 V
- V
GM
IGTMax. required DC Gate Current 60 mA Anode supply = 6V, resistive load, TJ = - 10°C
to trigger 45 Anode supply = 6V, resistive load, TJ = 25°C
20 Anode supply = 6V, resistive load, T
Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, TJ = - 10°C
V
GT
to trigger 2.0 Anode supply = 6V, resistive load, T
1.0 Anode supply = 6V, resistive load, TJ = 125°C
Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V
V
GD
IGDMax. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V
= rated value
DRM
= rated value
DRM
Switching
= 125°C
J
= 25°C
J
Parameters 25TTS..S Units Conditions
t
Typical turn-on time 0.9 µs TJ = 25°C
gt
t
Typical reverse recovery time 4 TJ = 125°C
rr
t
Typical turn-off time 110
q
Thermal-Mechanical Specifications
Parameters 25TTS..S Units Conditions
TJMax. Junction Temperature Range - 40 to 125 °C
T
Max. Storage Temperature Range - 40 to 125 °C
stg
Soldering Temperature 240 °C for 10 seconds (1.6mm from case)
R
Max. Thermal Resistance Junction 1.1 °C/W D C operation
thJC
to Case
R
Typ. Thermal Resistance Junction 40 °C/W
thJA
to Ambient (PCB Mount)**
wt Approximate Weight 2 (0.07) g (oz.)
2
T Case Style D
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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Pak (SMD-220)
3
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