Vishay 25TTS...PbF High Voltage Series Data Sheet

Vishay 25TTS...PbF High Voltage Series Data Sheet

25TTS...PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 25 A

2

(A)

TO-220AB

1 (K) (G) 3

PRODUCT SUMMARY

VT at 16 A

< 1.25 V

ITSM

300 A

VRRM

800/1200 V

DESCRIPTION/FEATURES

The 25TTS.. High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C temperature.

Available

RoHS*

COMPLIANT

junction

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

 

 

 

 

Capacitive input filter TA = 55 °C, TJ = 125 °C,

18

22

A

common heatsink of 1 °C/W

 

 

 

 

 

 

 

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

IT(AV)

Sinusoidal waveform

16

A

IRMS

 

25

 

 

VRRM/VDRM

 

800/1200

V

ITSM

 

300

A

VT

16 A, TJ = 25 °C

1.25

V

dV/dt

 

500

V/µs

 

 

 

 

dI/dt

 

150

A/µs

 

 

 

 

TJ

 

- 40 to 125

°C

VOLTAGE RATINGS

 

VRRM, MAXIMUM PEAK

VDRM, MAXIMUM PEAK

IRRM/IDRM

PART NUMBER

REVERSE VOLTAGE

DIRECT VOLTAGE

AT 125 °C

 

V

V

mA

 

 

 

 

25TTS08PbF

800

800

10

 

 

 

25TTS12PbF

1200

1200

 

 

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94385

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 11-Aug-08

 

1

25TTS...PbF High Voltage Series

Vishay High Power Products Phase Control SCR, 25 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

TYP.

MAX.

 

 

 

 

 

 

 

 

 

 

 

 

Maximum average on-state current

IT(AV)

TC = 93 °C, 180° conduction half sine wave

16

 

 

Maximum RMS on-state current

IRMS

 

 

25

 

A

Maximum peak, one-cycle,

ITSM

10 ms sine pulse, rated VRRM applied

300

 

 

 

non-repetitive surge current

10 ms sine pulse, no voltage reapplied

350

 

 

 

 

 

 

 

 

 

 

 

Maximum I2t for fusing

I2t

10 ms sine pulse, rated VRRM applied

450

 

A2s

10 ms sine pulse, no voltage reapplied

630

 

 

 

 

 

 

 

 

 

 

 

Maximum I2√t for fusing

I2√t

t = 0.1 to 10 ms, no voltage reapplied

6300

 

A2√s

Maximum on-state voltage drop

VTM

16 A, TJ = 25 °C

1.25

 

V

On-state slope resistance

rt

TJ = 125 °C

12.0

 

Threshold voltage

VT(TO)

1.0

 

V

 

 

 

Maximum reverse and direct leakage current

IRM/IDM

TJ = 25 °C

VR = Rated VRRM/VDRM

0.5

 

 

TJ = 125 °C

10

 

mA

 

 

 

 

Holding current

IH

Anode supply = 6 V, resistive load, initial IT = 1 A

-

 

100

 

 

Maximum latching current

IL

Anode supply = 6 V, resistive load

200

 

 

Maximum rate of rise of off-state voltage

dV/dt

 

 

500

 

V/µs

 

 

 

 

 

 

 

Maximum rate of rise of turned-on current

dI/dt

 

 

150

 

A/µs

 

 

 

 

 

 

 

 

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

Maximum peak gate power

PGM

 

8.0

W

Maximum average gate power

PG(AV)

 

2.0

 

 

Maximum peak positive gate current

+ IGM

 

1.5

A

Maximum peak negative gate voltage

- VGM

 

10

V

 

 

Anode supply = 6 V, resistive load, TJ = - 10 °C

60

 

Maximum required DC gate current to trigger

IGT

Anode supply = 6 V, resistive load, TJ = 25 °C

45

mA

 

 

Anode supply = 6 V, resistive load, TJ = 125 °C

20

 

Maximum required DC gate

 

Anode supply = 6 V, resistive load, TJ = - 10 °C

2.5

 

VGT

Anode supply = 6 V, resistive load, TJ = 25 °C

2.0

 

voltage to trigger

V

 

Anode supply = 6 V, resistive load, TJ = 125 °C

1.0

 

 

 

Maximum DC gate voltage not to trigger

VGD

TJ = 125 °C, VDRM = Rated value

0.25

 

Maximum DC gate current not to trigger

IGD

2.0

mA

 

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

Typical turn-on time

tgt

TJ = 25 °C

0.9

 

Typical reverse recovery time

trr

TJ = 125 °C

4

µs

Typical turn-off time

tq

110

 

 

 

www.vishay.com

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94385

2

 

Revision: 11-Aug-08

25TTS...PbF High Voltage Series

Phase Control SCR, 25 A Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

 

SYMBOL

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

Maximum junction and storage

 

TJ, TStg

 

- 40 to 125

°C

temperature range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthJC

DC operation

1.1

 

junction to case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum thermal resistance,

 

RthJA

 

62

°C/W

junction to ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical thermal resistance,

 

RthCS

Mounting surface, smooth and greased

0.5

 

case to heatsink

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

2

g

 

 

 

 

 

 

 

 

0.07

oz.

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

 

minimum

 

 

6 (5)

kgf · cm

 

 

 

 

 

(lbf · in)

 

maximum

 

 

12 (10)

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

 

Case style TO-220AB

25TTS08

 

 

 

 

 

 

25TTS12

 

 

 

 

 

 

 

 

 

 

 

 

Document Number: 94385

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 11-Aug-08

 

3

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