25TTS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
2
(A)
TO-220AB |
1 (K) (G) 3 |
PRODUCT SUMMARY
VT at 16 A |
< 1.25 V |
ITSM |
300 A |
VRRM |
800/1200 V |
DESCRIPTION/FEATURES
The 25TTS.. High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C temperature.
Available
RoHS*
COMPLIANT
junction
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS |
SINGLE-PHASE BRIDGE |
THREE-PHASE BRIDGE |
UNITS |
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Capacitive input filter TA = 55 °C, TJ = 125 °C, |
18 |
22 |
A |
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common heatsink of 1 °C/W |
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MAJOR RATINGS AND CHARACTERISTICS
PARAMETER |
TEST CONDITIONS |
VALUES |
UNITS |
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IT(AV) |
Sinusoidal waveform |
16 |
A |
IRMS |
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25 |
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VRRM/VDRM |
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800/1200 |
V |
ITSM |
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300 |
A |
VT |
16 A, TJ = 25 °C |
1.25 |
V |
dV/dt |
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500 |
V/µs |
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dI/dt |
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150 |
A/µs |
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TJ |
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- 40 to 125 |
°C |
VOLTAGE RATINGS
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VRRM, MAXIMUM PEAK |
VDRM, MAXIMUM PEAK |
IRRM/IDRM |
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PART NUMBER |
REVERSE VOLTAGE |
DIRECT VOLTAGE |
AT 125 °C |
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V |
V |
mA |
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25TTS08PbF |
800 |
800 |
10 |
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25TTS12PbF |
1200 |
1200 |
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* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94385 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 11-Aug-08 |
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1 |
25TTS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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TYP. |
MAX. |
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Maximum average on-state current |
IT(AV) |
TC = 93 °C, 180° conduction half sine wave |
16 |
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Maximum RMS on-state current |
IRMS |
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25 |
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A |
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Maximum peak, one-cycle, |
ITSM |
10 ms sine pulse, rated VRRM applied |
300 |
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non-repetitive surge current |
10 ms sine pulse, no voltage reapplied |
350 |
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Maximum I2t for fusing |
I2t |
10 ms sine pulse, rated VRRM applied |
450 |
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A2s |
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10 ms sine pulse, no voltage reapplied |
630 |
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Maximum I2√t for fusing |
I2√t |
t = 0.1 to 10 ms, no voltage reapplied |
6300 |
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A2√s |
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Maximum on-state voltage drop |
VTM |
16 A, TJ = 25 °C |
1.25 |
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V |
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On-state slope resistance |
rt |
TJ = 125 °C |
12.0 |
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mΩ |
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Threshold voltage |
VT(TO) |
1.0 |
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V |
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Maximum reverse and direct leakage current |
IRM/IDM |
TJ = 25 °C |
VR = Rated VRRM/VDRM |
0.5 |
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TJ = 125 °C |
10 |
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mA |
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Holding current |
IH |
Anode supply = 6 V, resistive load, initial IT = 1 A |
- |
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100 |
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Maximum latching current |
IL |
Anode supply = 6 V, resistive load |
200 |
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Maximum rate of rise of off-state voltage |
dV/dt |
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500 |
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V/µs |
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Maximum rate of rise of turned-on current |
dI/dt |
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150 |
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A/µs |
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TRIGGERING
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum peak gate power |
PGM |
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8.0 |
W |
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Maximum average gate power |
PG(AV) |
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2.0 |
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Maximum peak positive gate current |
+ IGM |
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1.5 |
A |
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Maximum peak negative gate voltage |
- VGM |
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10 |
V |
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Anode supply = 6 V, resistive load, TJ = - 10 °C |
60 |
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Maximum required DC gate current to trigger |
IGT |
Anode supply = 6 V, resistive load, TJ = 25 °C |
45 |
mA |
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Anode supply = 6 V, resistive load, TJ = 125 °C |
20 |
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Maximum required DC gate |
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Anode supply = 6 V, resistive load, TJ = - 10 °C |
2.5 |
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VGT |
Anode supply = 6 V, resistive load, TJ = 25 °C |
2.0 |
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voltage to trigger |
V |
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Anode supply = 6 V, resistive load, TJ = 125 °C |
1.0 |
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Maximum DC gate voltage not to trigger |
VGD |
TJ = 125 °C, VDRM = Rated value |
0.25 |
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Maximum DC gate current not to trigger |
IGD |
2.0 |
mA |
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SWITCHING
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Typical turn-on time |
tgt |
TJ = 25 °C |
0.9 |
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Typical reverse recovery time |
trr |
TJ = 125 °C |
4 |
µs |
Typical turn-off time |
tq |
110 |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 94385 |
2 |
|
Revision: 11-Aug-08 |
25TTS...PbF High Voltage Series
Phase Control SCR, 25 A Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum junction and storage |
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TJ, TStg |
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- 40 to 125 |
°C |
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temperature range |
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Maximum thermal resistance, |
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RthJC |
DC operation |
1.1 |
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junction to case |
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Maximum thermal resistance, |
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RthJA |
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62 |
°C/W |
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junction to ambient |
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Typical thermal resistance, |
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RthCS |
Mounting surface, smooth and greased |
0.5 |
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case to heatsink |
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Approximate weight |
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2 |
g |
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0.07 |
oz. |
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Mounting torque |
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minimum |
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6 (5) |
kgf · cm |
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(lbf · in) |
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maximum |
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12 (10) |
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Marking device |
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Case style TO-220AB |
25TTS08 |
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25TTS12 |
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Document Number: 94385 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 11-Aug-08 |
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3 |