Datasheet 25TTS...PbF High Voltage Series DataSheet (Vishay)

25TTS...PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 25 A

2

(A)

DESCRIPTION/FEATURES

The 25TTS.. High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction

TO-220AB

1 (K)

(G) 3

temperature.

Typical applications are in input rectification (soft start) and

PRODUCT SUMMARY

VT at 16 A < 1.25 V

I

TSM

V

RRM

300 A

800/1200 V

these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

18 22 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

RRM/VDRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Sinusoidal waveform 16

25

800/1200 V

300 A

16 A, TJ = 25 °C 1.25 V

- 40 to 125 °C

A

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

25TTS08PbF 800 800

25TTS12PbF 1200 1200

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94385 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

10

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25TTS...PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 25 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

T(TO)

H

t

L

TC = 93 °C, 180° conduction half sine wave 16

25

10 ms sine pulse, rated V

applied 300

RRM

10 ms sine pulse, no voltage reapplied 350

10 ms sine pulse, rated V

applied 450

RRM

10 ms sine pulse, no voltage reapplied 630

16 A, TJ = 25 °C 1.25 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 10

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A - 100

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

12.0 mΩ

1.0 V

0.5

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 10 °C 60

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

= 25 °C 45

J

= 125 °C 20

J

mAAnode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.25

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

4

110

µsTypical reverse recovery time t

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Document Number: 94385

2 Revision: 11-Aug-08

25TTS...PbF High Voltage Series

Phase Control SCR, 25 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220AB

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.1

Mounting surface, smooth and greased 0.5

- 40 to 125 °C

62

2g

0.07 oz.

25TTS08

25TTS12

°C/W

kgf · cm
(lbf · in)

Document Number: 94385 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

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25TTS...PbF High Voltage Series

Vishay High Power Products

130

25TTS.. Series

(DC) = 1.1 °C/W

R

thJC

120

110

Temperature (°C)

100

Maximum Allowable Case

90

015

130

120

110

100

Temperature (°C)

90

Maximum Allowable Case

80

015

60°

30°

52010

Average On-State Current (A)

Fig. 1 - Current Rating Characteristics

25TTS.. Series
R

thJC

30°

60°

90°

520253010

Average On-State Current (A)

Fig. 2 - Current Rating Characteristics

Conduction angle

90°

120°

(DC) = 1.1 °C/W

Conduction period

120°

180°

Phase Control SCR, 25 A

Ø

180°

Ø

DC

Peak Half Sine Wave

35

30

25

20

15

Power Loss (W)

10

5

Maximum Average On-State

0

DC
180°
120°

90°

60°

30°

Conduction period

25TTS.. Series
T

0 5 10 15 20 25 30

Average On-State Current (A)

Fig. 4 - On-State Power Loss Characteristics

350

300

250

200

On-State Current (A)

150

At any rated load condition and with
rated V

25TTS.. Series

1 10 100

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RMS limit

Ø

= 125 °C

J

25

180°

20

120°

90°
60°

15

30°

10

Power Loss (W)

5

Maximum Average On-State

0

048121620

Average On-State Current (A)

Fig. 3 - On-State Power Loss Characteristics

RMS limit

Ø

Conduction angle

25TTS.. Series
T

= 125 °C

J

400

350

300

250

200

On-State Current (A)

Peak Half Sine Wave

150

100

0.01 0.1 1

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

25TTS.. Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

reapplied

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Document Number: 94385

4 Revision: 11-Aug-08

25TTS...PbF High Voltage Series

Instantaneous On-State Current (A)

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10 V, 20 Ω
t

= 0.5 µs, tp ≥ 6 µs

r

b) Recommended load line for

10

≤ 30 % rated dI/dt: 10 V, 65 Ω
t

= 1 µs, tp ≥ 6 µs

r

1

V

GD

0.001

I

GD

0.01 0.1 1 10 100

Instantaneous Gate Voltage (V)

0.1

Phase Control SCR, 25 A

1000

100

TJ = 25 °C

10

1

012345

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

(a)

(b)

T

J

T

T

J

= 125 °C

= 10 °C

J

= 25 °C

25TTS.. Series

Instantaneous Gate Current (A)

Fig. 8 - Gate Characteristics

TJ = 125 °C

25TTS.. Series

Vishay High Power Products

(1) PGM = 40 W, tp = 1 ms

= 20 W, tp = 2 ms

(2) P

GM

= 8 W, tp = 5 ms

(3) P

GM

= 4 W, tp = 10 ms

(4) P

GM

(3)(4)

Frequency limited by P

(1)(2)

G(AV)

10

Steady state value

(DC operation)

1

- Transient

0.1

thJC

Z

Thermal Impedance (°C/W)

0.01

Single pulse

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

25TTS.. Series

1100.0001 0.001 0.01 0.1

Square Wave Pulse Duration (s)

Fig. 9 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94385 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

25TTS...PbF High Voltage Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

25 T T S 12 PbF

1 - Current rating (25 = 25 A)

2 - Circuit configuration:

3

4

5 - Voltage rating

6 -

Phase Control SCR, 25 A

51324

T = Single thyristor

- Package:

T = TO-220AB

- Type of silicon:

S = Standard recovery rectifier

None = Standard production

PbF = Lead (Pb)-free

6

08 = 800 V

12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95222

Part marking information http://www.vishay.com/doc?95225

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6 Revision: 11-Aug-08

Document Number: 94385

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-220AB

A

Ø P

E

Q

D

D1

3241

(3)

CC

e1

b, b2

c

b1, b3

Section C - C and D - D

Detail B

(2)

L1

DD

L

2 x e

MM

0.015 ABC

c1

C

H1

C

Lead assignments

HEXFET

1. - Gate

2. - Drain

3. - Source

IGBTs, CoPAK

1. - Gate

2. - Collector

3. - Emitter

B

A

Seating plane

A1

A2

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

A

A

Sheet 2

3 x b2 3 x b

E

H1

θ

View A - A

123

C

C

Detail B

Thermal pad

D2

E1

DL1D

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355
A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507
A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3

b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350
b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC
b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270
b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580

c 0.36 0.61 0.014 0.024 L1 - 6.35 - 0.250 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120

D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimensions: inches

Document Number: 95222 For technical questions concerning discrete products, contact: [e-mail]

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Revision: 11-Mar-08 For technical questions concerning module products, contact: [e-mail]

1

Assembly
lot code

xxxxxxxx

V P119X

AC

TO-220AB

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X

Part Marking Information

Vishay High Power Products

Example: This is a xxxxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”

Document Number: 95225 For technical questions concerning discrete products, contact: [e-mail]
Revision: 30-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1