Vishay 25TTS...FPPbF High Voltage Series Data Sheet

TO-220AB FULL-PAK

PRODUCT SUMMARY

VT at 16 A < 1.25 V

I

TSM

V

RRM

25TTS...FPPbF High Voltage Series

Vishay High Power Products

Phase Control SCR

TO-220AB FULL-PAK, 25 A

DESCRIPTION/FEATURES

2

(A)

1 (K)

(G) 3

200 A

800/1200 V

The 25TTS...FPPbF High Voltage Series of
silicon controlled rectifiers are specifically
designed for medium power switching and phase
control applications. The glass passivation
technology used has reliable operation up to 140 °C junction
temperature.

Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines. Fully isolated
package (V

= 2500 V

INS

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

); plastic material 94VRo.

RMS

Available

RoHS*

COMPLIANT

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

18 22 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

RRM/VDRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Sinusoidal waveform 16

25

800/1200 V

300 A

16 A, TJ = 25 °C 1.25 V

- 40 to 125 °C

A

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

25TTS08FPPbF 800 800

25TTS12FPPbF 1200 1200

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

10

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94384 For technical questions, contact: [e-mail]
Revision: 27-May-08 1

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25TTS...FPPbF High Voltage Series

Vishay High Power Products

Phase Control SCR

TO-220AB FULL-PAK, 25 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6300 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

T(TO)

H

L

t

TC = 85 °C, 180° conduction half sine wave 16

25

10 ms sine pulse, rated V

applied 300

RRM

10 ms sine pulse, no voltage reapplied 350

10 ms sine pulse, rated V

applied 450

RRM

10 ms sine pulse, no voltage reapplied 630

16 A, TJ = 25 °C 1.25 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 10

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A - 100

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

12.0 mΩ

1.0 V

0.5

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 10 °C 60

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

= 25 °C 45

J

= 125 °C 20

J

mAAnode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.25

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

110

4

µsTypical reverse recovery time t

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Document Number: 94384

2 Revision: 27-May-08

25TTS...FPPbF High Voltage Series

Phase Control SCR

Vishay High Power Products

TO-220AB FULL-PAK, 25 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220AB FULL-PAK (94/V0)

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.5

Mounting surface, smooth and greased 1.5

- 40 to 125 °C

62

2g

0.07 oz.

25TTS08FP

25TTS12FP

°C/W

kgf · cm
(lbf · in)

Document Number: 94384 For technical questions, contact: [e-mail]
Revision: 27-May-08 3

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25TTS...FPPbF High Voltage Series

Vishay High Power Products

130

120

110

100

90

30°

80

70

Maximum Allowable Case Temperature (°C)

0 5 10 15 20

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

130

120

110

100

25TTS.. Se rie s
R ( DC) = 1. 5 °C/ W

thJC

Conduc tion Angle

60°

90°

120°

180°

25TTS.. Series
R ( DC) = 1.5 °C/ W

thJC

Conduc tion Period

Phase Control SCR

TO-220AB FULL-PAK, 25 A

35

30

25

20

15

10

Maximum Average On-state Power Loss (W)

350

300

250

DC
180°
120°

90°
60°
30°

RM S Lim it

Conduc tion Period

5

0

0 5 10 15 20 25 30

Avera ge On-state Current (A)

2 5 TTS. . Se r i e s
T = 125°C

J

Fig. 4 - On-State Power Loss Characteristics

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Init ial T = 125°C

J

@ 6 0 Hz 0. 00 83 s
@ 5 0 Hz 0. 01 00 s

90

30°

60°

80

70

Maximum Allo wable Case Temperature (°C)

0 5 10 15 20 25 30

90°

120°

180°

DC

Average On-state Current (A)

Fig. 2 - Current Rating Characteristics

25

20

15

10

Maximum Average On-state Powe r Loss (W)

180°
120°

90°
60°
30°

RM S Lim i t

Conduct ion Angle

5

0

048121620

Average On-state Current (A)

25TTS. . Se r i e s
T = 125°C

J

ine Wa ve On-st a te Current (A)

200

25TTS. . Se ri e s

Pe a k H a l f S

150

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

400

Ma ximum Non Rep e titive Surg e Curre nt

Versus Pulse Train Durat ion. Contro l

Of Cond uc tion Ma y Not Be Maintained.

350

300

250

200

ine Wave On-sta te Current (A)

150

25TTS.. Seri e s

Pe ak Ha lf S

100

0.01 0.1 1

Pulse Tr a i n D u ra ti o n ( s)

Init ial T = 125°C

No Voltage Reapplied
Ra t e d V Re a p p l ie d

J

RRM

Fig. 3 - On-State Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

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Document Number: 94384

4 Revision: 27-May-08

25TTS...FPPbF High Voltage Series

Phase Control SCR

Vishay High Power Products

TO-220AB FULL-PAK, 25 A

1000

100

T = 25 °C

J

10

Instantaneous On-state Current (A)

1

012345

Insta nta neous On-st a t e Vo lta ge (V)

Fig. 7 - On-State Voltage Drop Characteristics

10

D = 0.50
D = 0.33
D = 0.25

1

D = 0.17
D = 0.08

thJC

T = 12 5° C

J

25TTS.. Series

Steady State Value
(DC Operation)

0.1
Si n g l e P u l se

25TTS.. Serie s

0.01

Tran sient The rma l Imp ed anc e Z (°C/ W)

0.0001 0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu lse D u ra t i o n ( s)

Fig. 8 - Thermal Impedance Z

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/ dt: 10 V, 65 ohms

10

tr = 1 µs, t p >= 6 µs

TJ = 25 ° C

T

1

VGD

Insta nt a neo us Ga te Volta ge (V)

IGD

0.1

0.001 0.01 0.1 1 10 100

J = 125 °C

25TTS.. Serie s

Insta nta neo us Ga te Curre n t (A)

(a)

(b)

TJ = -1 0 ° C

Characteristics

thJC

(1) PGM = 40 W, t p = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms

(3)

(4)

Freque nc y Limited by PG(AV)

(2)

(1)

Fig. 9 - Gate Characteristics

Document Number: 94384 For technical questions, contact: [e-mail]

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Revision: 27-May-08 5

25TTS...FPPbF High Voltage Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

25 T T S 12 FP PbF

1 - Current rating (25 = 25 A)

2 - Circuit configuration:

3 - Package:

4

- Type of silicon:

5 - Voltage code x 100 = V

6 - FULL-PAK

7 -

Phase Control SCR

TO-220AB FULL-PAK, 25 A

51324

67

T = Single thyristor

T = TO-220AB

Standard recovery rectifier

RRM

None = Standard production

PbF = Lead (Pb)-free

08 = 800 V

12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95072

Part marking information http://www.vishay.com/doc?95069

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 27-May-08

Document Number: 94384

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1

DIMENSIONS in millimeters

Outline Dimensions

Vishay High Power Products

TO-220AB FULL-PAK

R 0.7
R 0.5

16.4

15.4

2.54 TYP.

(2 places)

10.6

10.4

0.9

0.7

2.54 TYP.

Hole Ø

3.7

3.2

3.4

3.1

2.8

2.6

7.1

6.7

16.0

15.8

10°

0.48

0.44

2.85

2.65

4.6

4.8

3.3

3.1

1.4

1.3

1.15

1.05

13.56

13.05

TYP.

5° ± 0.5°

5° ± 0.5°

Document Number: 95072 For technical questions concerning discrete products, contact: [e-mail]
Revision: 03-Dec-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Assembly
lot code

xxxxxxxFP

V P119XA

89

17

Part Marking Information

TO-220AB FULL-PAK

Example: This is a xxxxxxxFP with
assembly lot code 1789, child lot A,
assembled on WW 19, 2001

Part number
FP = FULL-PAK

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X
Child lot A

in the assembly line “X”

Vishay High Power Products

Document Number: 95069 For technical questions concerning discrete products, contact: [e-mail]
Revision: 11-Jun-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1