Vishay 25TTS..FP Data Sheet
Bulletin I2135 rev. D 03/99
PHASE CONTROL SCR
TO-220 FULLPAK
Description/Features
The 25TTS..FP SAFEIR series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (V
UL E78996 approved
Output Current in Typical Applications
= 2500 V
INS
RMS
)
SAFE
V
T
I
TSM
V
RRM
IR
Series
25TTS..FP
< 1.25V @ 16A
= 300A
800 to 1600V
Applications Single-phase Bridge Three-phase Bridge Units
Capacitive input filter
common heatsink of 1°C/W
Major Ratings and Characteristics
= 55°C,
T
A
= 125°C, 18 22 A
T
J
Package Outline
Characteristics 25TTS..FP Units
I
Sinusoidal 16 A
T(AV)
waveform
I
RMS
V
V
/
RRM
DRM
I
TSM
V
@ 16 A, TJ = 25°C 1.25 V
T
dv/dt 500 V/µs
di/dt 150 A/µs
T
J
25 A
up to 1600 V
300 A
- 40 to 125 °C
TO-220 FULLPAK
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1
25TTS..FP SAFE
IR
Series
Bulletin I2135 rev. D 03/99
Voltage Ratings
V
Part Number
, maximum V
RRM
peak reverse voltage peak direct voltage 125°C
, maximum I
DRM
VVmA
25TTS08FP 800 800 10
25TTS12FP 1200 1200
25TTS16FP 1600 1600
Absolute Maximum Ratings
Parameters 25TTS..FP Units Conditions
I
Max. Average On-state Current 16 A @ TC = 85° C, 180° conduction half sine wave
T(AV)
I
Max. RMS On-state Current 25
RMS
I
Max. Peak One Cycle Non-Repetitive 300 10ms Sine pulse, rated V
TSM
Surge Current 350 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 450 A2s 10ms Sine pulse, rated V
630 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 6300 A2√s t = 0.1 to 10ms, no voltage reapplied
VTMMax. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C
r
On-state slope resistance 12.0 mΩ TJ = 125°C
t
V
Threshold Voltage 1.0 V
T(TO)
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 10 TJ = 125 °C
I
Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
H
-- 100 mA 25TTS08FP, 25TTS12FP
100 150 25TTS16FP
IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs
di/dt Max. Rate of Rise of turned-on Current 150 A/µs
applied
RRM
applied
RRM
VR = rated V
RRM
/ V
RRM/IDRM
DRM
2
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25TTS..FP SAFE
Bulletin I2135 rev. D 03/99
IR
Triggering
Parameters 25TTS..FP Units Conditions
PGMMax. peak Gate Power 8.0 W
P
Max. average Gate Power 2.0
G(AV)
+ I
Max. paek positive Gate Current 1.5 A
GM
Max. paek negative Gate Voltage 10 V
- V
GM
IGTMax. required DC Gate Current 60 mA Anode supply = 6V, resistive load, TJ = - 10°C
to trigger 45 Anode supply = 6V, resistive load, TJ = 25°C
20 Anode supply = 6V, resistive load, T
Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, TJ = - 10°C
V
GT
to trigger 2.0 Anode supply = 6V, resistive load, T
1.0 Anode supply = 6V, resistive load, TJ = 125°C
Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V
V
GD
IGDMax. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V
= rated value
DRM
= rated value
DRM
= 125°C
J
= 25°C
J
Switching
Series
Parameters 25TTS..FP Units Conditions
t
Typical turn-on time 0.9 µs TJ = 25°C
gt
t
Typical reverse recovery time 4 TJ = 125°C
rr
t
Typical turn-off time 110
q
Thermal-Mechanical Specifications
Parameters 25TTS..FP Units Conditions
TJMax. Junction Temperature Range - 40 to 125 °C
T
Max. Storage Temperature Range - 40 to 125
stg
R
Max. Thermal Resistance Junction 1.5 °C/W DC operation
thJC
to Case
R
Max. Thermal Resistance Junction 62
thJA
to Ambient
R
Typ. Thermal Resistance Case 1.5 Mounting surface, smooth and greased
thCS
to Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-220 FULLPAK (94/V0)
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Kg-cm
(Ibf-in)
3
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