Vishay 25TTS..FP Data Sheet

Vishay 25TTS..FP Data Sheet

Bulletin I2135 rev. D 03/99

SAFEIR Series

25TTS..FP

PHASE CONTROL SCR TO-220 FULLPAK

Description/Features

The 25TTS..FP SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.

Fully isolated package (VINS = 2500 VRMS)

UL E78996 approved

VT

< 1.25V @ 16A

ITSM

= 300A

VRRM

800 to 1600V

 

 

Output Current in Typical Applications

Applications

 

 

Single-phase Bridge

Three-phase Bridge

Units

 

 

 

 

 

 

Capacitive input filterTA = 55°C,TJ =125°C,

 

18

 

22

A

commonheatsinkof1°C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Major Ratings and Characteristics

 

 

 

Package Outline

 

 

 

 

 

 

 

 

 

Characteristics

25TTS..FP

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

IT(AV)

Sinusoidal

16

 

A

 

 

 

 

 

waveform

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IRMS

 

25

 

A

 

 

 

 

VRRM/VDRM

upto1600

 

V

 

 

 

 

ITSM

 

300

 

A

 

 

 

 

VT

@ 16 A, TJ = 25°C

1.25

 

V

 

 

 

 

 

 

 

 

 

 

 

 

dv/dt

 

500

V/µs

 

 

 

 

 

 

 

 

 

 

 

 

di/dt

 

150

A/µs

 

 

TO-220 FULLPAK

 

 

 

 

 

 

 

 

 

T

 

-40to125

°C

 

 

 

 

 

 

 

 

J

 

 

 

 

 

 

 

 

www.irf.com

1

25TTS..FP SAFEIR Series

Bulletin I2135 rev. D 03/99

Voltage Ratings

 

VRRM, maximum

VDRM , maximum

IRRM/IDRM

Part Number

peak reverse voltage

peak direct voltage

125°C

 

V

V

mA

 

 

 

 

25TTS08FP

800

800

10

 

 

 

 

25TTS12FP

1200

1200

 

 

 

 

 

25TTS16FP

1600

1600

 

 

 

 

 

Absolute Maximum Ratings

 

Parameters

25TTS..FP

Units

 

 

Conditions

 

 

 

 

 

 

 

 

IT(AV)

Max.AverageOn-stateCurrent

16

 

A

@TC=85°C,180°conductionhalfsinewave

IRMS

Max.RMSOn-stateCurrent

25

 

 

 

 

 

ITSM

Max.PeakOneCycleNon-Repetitive

300

 

10msSinepulse,ratedVRRMapplied

 

SurgeCurrent

350

 

10msSinepulse,novoltagereapplied

 

 

 

 

 

 

 

I2t

Max. I2t for fusing

450

A2s

10msSinepulse,ratedVRRMapplied

 

 

630

 

10msSinepulse,novoltagereapplied

 

 

 

 

 

 

 

I2Öt

Max. I2Öt for fusing

6300

A2Ös

t=0.1to10ms,novoltagereapplied

 

 

 

 

 

 

 

VTM

Max.On-stateVoltageDrop

1.25

V

@16A, TJ = 25°C

rt

On-state slope resistance

12.0

mW

TJ =

125°C

VT(TO)

Threshold Voltage

1.0

 

V

 

 

 

IRM/IDM Max.Reverse and Direct

0.5

 

mA

TJ =

25 °C

VR = rated VRRM/ VDRM

 

Leakage Current

10

 

 

TJ = 125 °C

 

 

 

 

 

 

 

 

 

 

 

 

IH

Holding Current

Typ.

 

Max.

 

Anode Supply = 6V, Resistive load, Initial IT=1A

 

 

--

 

100

mA

25TTS08FP, 25TTS12FP

 

 

 

 

 

 

 

 

 

100

 

150

 

25TTS16FP

 

 

 

 

 

 

IL

Max.LatchingCurrent

200

mA

AnodeSupply=6V,Resistiveload

dv/dt

Max. Rate of Rise of off-state Voltage

500

V/µs

 

 

 

 

 

 

 

 

 

 

 

di/dt

Max. Rate of Rise of turned-on Current

150

A/µs

 

 

 

 

 

 

 

 

 

 

 

 

2

www.irf.com

 

 

 

 

 

25TTS..FP SAFEIR Series

 

 

 

 

 

Bulletin I2135 rev. D 03/99

 

 

 

 

 

 

Triggering

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

 

25TTS..FP

Units

Conditions

PGM

Max. peak Gate Power

 

8.0

W

 

 

PG(AV) Max. average Gate Power

 

2.0

 

 

 

+ IGM Max. paek positive Gate Current

1.5

A

 

 

 

 

 

 

 

 

- VGM Max. paek negative Gate Voltage

10

V

 

 

 

 

 

 

 

 

 

IGT

Max. required DC Gate Current

60

mA

Anode supply = 6V, resistive load, TJ = - 10°C

 

 

to trigger

 

45

 

Anode supply = 6V, resistive load, TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

Anode supply = 6V, resistive load, TJ = 125°C

 

 

 

 

 

 

 

VGT

Max. required DC Gate Voltage

2.5

V

Anode supply = 6V, resistive load, TJ = - 10°C

 

 

to trigger

 

2.0

 

Anode supply = 6V, resistive load, TJ = 25°C

 

 

 

 

 

 

 

 

 

 

1.0

 

Anode supply = 6V, resistive load, TJ = 125°C

 

 

 

 

 

 

 

VGD

Max. DC Gate Voltage not to trigger

0.25

 

TJ = 125°C, V DRM = rated value

IGD

Max. DC Gate Current not to trigger

2.0

mA

TJ = 125°C, V DRM = rated value

Switching

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

 

25TTS..FP

Units

Conditions

tgt

Typical turn-on time

 

0.9

µs

TJ = 25°C

trr

Typical reverse recovery time

4

 

TJ = 125°C

tq

Typical turn-off time

 

110

 

 

 

Thermal-Mechanical Specifications

 

 

 

 

 

 

 

 

 

 

 

Parameters

 

25TTS..FP

Units

Conditions

 

 

 

 

 

 

 

TJ

Max. Junction Temperature Range

- 40 to 125

°C

 

 

Tstg

Max. Storage Temperature Range

- 40 to 125

 

 

 

RthJC

Max. Thermal Resistance Junction

1.5

°C/W

DC operation

 

to Case

 

 

 

 

 

RthJA

Max. Thermal Resistance Junction

62

 

 

 

 

to Ambient

 

 

 

 

 

 

 

 

 

 

 

 

RthCS

Typ. Thermal Resistance Case

1.5

 

Mountingsurface,smoothandgreased

 

toHeatsink

 

 

 

 

 

wt

Approximate Weight

 

2 (0.07)

g (oz.)

 

 

 

 

 

 

 

 

 

T

Mounting Torque

Min.

6 (5)

Kg-cm

 

 

 

 

 

 

 

 

 

 

Max.

12 (10)

(Ibf-in)

 

 

 

 

 

 

 

 

 

 

CaseStyle

 

TO-220FULLPAK

(94/V0)

 

 

 

 

 

 

 

 

 

 

 

 

 

www.irf.com

 

 

 

3

 

Loading...
+ 4 hidden pages