Vishay 25RIA Series Data Sheet

25RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 25 A

TO-208AA (TO-48)

PRODUCT SUMMARY

IT(AV)

25 A

FEATURES

• Improved glass passivation for high reliability
and exceptional stability at high temperature	RoHS
	COMPLIANT

•High dI/dt and dV/dt capabilities

•Standard package

•Low thermal resistance

•Metric threads version available

•Types up to 1200 V VDRM/VRRM

•RoHS compliant

•Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

•Medium power switching

•Phase control applications

• Can be supplied to meet stringent military, aerospace and other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

	PARAMETER	TEST CONDITIONS	VALUES	UNITS
	IT(AV)		25	A
		TC	85	°C
	IT(RMS)		40	A
	ITSM	50 Hz	420	A
		60 Hz	440
	I2t	50 Hz	867	A2s
		60 Hz	790
	VDRM/VRRM		100 to 1200	V
	tq	Typical	110	µs
	TJ		- 65 to 125	°C

Document Number: 93701	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 19-Sep-08		1

25RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 25 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

	TYPE	VOLTAGE	VDRM/VRRM, MAXIMUM REPETITIVE PEAK	VRSM, MAXIMUM NON-REPETITIVE	IDRM/IRRM MAXIMUM
			AND OFF-STATE VOLTAGE (1)	PEAK VOLTAGE (2)	AT TJ = TJ MAXIMUM
	NUMBER	CODE
			V	V	mA
		10	100	150	20
		20	200	300
		40	400	500
	25RIA
		60	600	700	10
		80	800	900
		100	1000	1100
		120	1200	1300

Notes

(1)Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2)For voltage pulses with tp ≤ 5 ms

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL		TEST CONDITIONS			VALUES	UNITS
	Maximum average on-state current	IT(AV)	180° sinusoidal conduction				25	A
	at case temperature						85	°C
	Maximum RMS on-state current	IT(RMS)					40	A
			t = 10 ms	No voltage			420
	Maximum peak, one-cycle	ITSM	t = 8.3 ms	reapplied			440	A
	non-repetitive surge current		t = 10 ms	100 % VRRM		Sinusoidal	350
			t = 8.3 ms	reapplied			370
						half wave,
						initial TJ =
			t = 10 ms	No voltage			867
				reapplied		TJ maximum
	Maximum I2t for fusing	I2t	t = 8.3 ms				790	A2s
			t = 10 ms	100 % VRRM			615
			t = 8.3 ms	reapplied			560
	Maximum I2√t for fusing	I2√t	t = 0.1 to 10 ms, no voltage reapplied,				8670	A2√s
			TJ = TJ maximum
	Low level value of threshold voltage	VT(TO)1	(16.7 % x π x IT(AV) < I < π x IT(AV)),				0.99
			TJ = TJ maximum					V
	High level value of threshold voltage	VT(TO)2	(I > π x IT(AV)), TJ = TJ maximum				1.40
	Low level value of	rt1	(16.7 % x π x IT(AV) < I < π x IT(AV)),				10.1
	on-state slope resistance		TJ = TJ maximum
								mΩ
	High level value of	rt2	(I > π x IT(AV)), TJ = TJ maximum				5.7
	on-state slope resistance
	Maximum on-state voltage	VTM	Ipk = 79 A, TJ = 25 °C				1.70	V
	Maximum holding current	IH	TJ = 25 °C, anode supply 6 V, resistive load				130	mA
	Latching current	IL					200

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93701
2		Revision: 19-Sep-08

25RIA Series

Medium Power Thyristors Vishay High Power Products

(Stud Version), 25 A

	SWITCHING
	PARAMETER		SYMBOL	TEST CONDITIONS			VALUES	UNITS
		VDRM ≤ 600 V					200
				TJ = TJ maximum, VDM = Rated VDRM
	Maximum rate of rise	VDRM ≤ 800 V					180
			dI/dt	Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum				A/µs
	of turned-on current	VDRM ≤ 1000 V					160
				ITM = (2 x rated dI/dt) A
		VDRM ≤ 1600 V					150
	Typical turn-on time		tgt	TJ = 25 °C,			0.9
				at rated VDRM/VRRM, TJ = 125 °C
	Typical reverse recovery time		trr	TJ = TJ maximum,			4
				ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs				µs
				TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,
	Typical turn-off time		tq	dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM,			110
				gate bias 0 V to 100 W
	Note
	• tq = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request
	BLOCKING
	PARAMETER		SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum critical rate of rise		dV/dt	TJ = TJ maximum linear to 100 % rated VDRM			100	V/µs
	of off-state voltage			TJ = TJ maximum linear to 67 % rated VDRM			300 (1)
	Note
	(1) Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 25RIA120S90
	TRIGGERING
	PARAMETER		SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum peak gate power		PGM	TJ = TJ maximum			8.0	W
	Maximum average gate power		PG(AV)				2.0
	Maximum peak positive gate current		IGM	TJ = TJ maximum			1.5	A
	Maximum peak negative gate voltage		-VGM	TJ = TJ maximum			10	V
				TJ = - 65 °C		Maximum required gate trigger	90
						current/voltage are the lowest
	DC gate current required to trigger		IGT	TJ = 25 °C			60	mA
						value which will trigger all units
				TJ = 125 °C		6 V anode to cathode applied	35
				TJ = - 65 °C			3.0
	DC gate voltage required to trigger		VGT	TJ = 25 °C			2.0	V
				TJ = 125 °C			1.0
	DC gate current not to trigger		IGD	TJ = TJ maximum, VDRM = Rated value			2.0	mA
						Maximum gate current/voltage
				TJ = TJ maximum,		not to trigger is the maximum
	DC gate voltage not to trigger		VGD			value which will not trigger any	0.2	V
				VDRM = Rated value
						unit with rated VDRM anode to
						cathode applied

Document Number: 93701	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 19-Sep-08		3