Vishay 242NQ030PBF Data Sheet

HALF-PAK (D-67)
PRODUCT SUMMARY
I
F(AV)
V
R
Vishay High Power Products
Schottky Rectifier, 240 A
Lug terminal
anode
Base
cathode
240 A
30 V
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 242NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection.
242NQ030PbF
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 240 A
30 V
tp = 5 µs sine 27 000 A
220 Apk, TJ = 125 °C 0.45 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 242NQ030PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 118 °C, rectangular waveform 240
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 3000
TJ = 25 °C, IAS = 21 A, L = 1 mH 216 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
RRM
applied
27 000
A
48 A
Document Number: 94170 For technical questions, contact: ind-modules@vishay.com Revision: 28-Apr-08 1
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242NQ030PbF
Vishay High Power Products
Schottky Rectifier, 240 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
240 A
Maximum forward voltage drop See fig. 1
V
FM
480 A 0.73
(1)
240 A
480 A 0.7
Maximum reverse leakage current See fig. 2
Maximum junction capacitance C
Typical series inductance L
I
RM
T
S
TJ = 25 °C
T
= 125 °C 1120
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 14 800 pF
From top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.54
0.47
20
10 000 V/µs
Note
(1)
Pulse width = 500 µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Terminal torque
minimum
maximum 4 (35.4)
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
T
, T
J
Stg
R
thJC
R
thCS
DC operation See fig. 4
Mounting surface, smooth and greased 0.05
- 55 to 150 °C
0.19
30 g
1.06 oz.
3 (26.5)
Non-lubricated threads
(lbf in)
V
mA
°C/W
N m
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Document Number: 94170
2 Revision: 28-Apr-08
242NQ030PbF
1000
100
Current (A)
10
- Instantaneous Forward
F
I
1
0.2 0.6 1.0 1.20.80.40
V
- Forward Voltage Drop (V)
FM
TJ = 150 °C T
= 125 °C
J
T
= 25 °C
J
Schottky Rectifier, 240 A
- Reverse Current (mA)
R
I
Vishay High Power Products
10 000
1000
100
TJ = 100 °C
10
1
0.1
0.01
TJ = 25 °C
0102030
5
TJ = 75 °C
TJ = 50 °C
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 125 °C
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100 000
2515
10 000
- Junction Capacitance (pF)
T
C
1000
02025
10
515
V
- Reverse Voltage (V)
R
TJ = 25 °C
30
35
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75 D = 0.50
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.33 D = 0.25 D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94170 For technical questions, contact: ind-modules@vishay.com
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Revision: 28-Apr-08 3
242NQ030PbF
Vishay High Power Products
160
150
140
130
Square wave (D = 0.50)
120
80 % rated V
110
Allowable Case Temperature (°C)
See note (1)
100
0 300 350150
50 200
I
F(AV)
applied
R
100 250
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
100 000
Schottky Rectifier, 240 A
200
150
100
Average Power Loss (W)
At any rated load condition and with rated V applied following surge
RRM
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
RMS limit
50
0
0
100 200
50
I
- Average Forward Current (A)
F(AV)
DC
150 250 350
Fig. 6 - Forward Power Loss Characteristics
300
10 000
- Non-Repetitive Surge Current (A)
1000
FSM
I
10
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current monitor
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
100
L
1000
High-speed
switch
Freewheel
diode
40HFL40S02
10 000
+
V
= 25 V
d
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
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Document Number: 94170
4 Revision: 28-Apr-08
242NQ030PbF
Schottky Rectifier, 240 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95020
24 2 N Q 030 PbF
51324
1 - Average current rating (x 10)
2 - Product silicon identification
3 - N = Not isolated
4 - Q = Schottky rectifier diode
5 - Voltage rating (030 = 30 V)
6 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
6
Document Number: 94170 For technical questions, contact: ind-modules@vishay.com Revision: 28-Apr-08 5
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DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20) 4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3
- 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82) 20 (0.78)
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
Document Number: 95020 For technical questions, contact: indmodules@vishay.com Revision: 20-May-09 1
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