Vishay 241NQ045PbF Data Sheet

HALF-PAK (D-67)
PRODUCT SUMMARY
I
F(AV)
Vishay High Power Products
Schottky Rectifier, 240 A
Lug terminal
anode
Base
cathode
240 A
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 241NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection.
241NQ045PbF
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 240 A
45 V
tp = 5 µs sine 25 000 A
240 Apk, TJ = 125 °C 0.64 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 241NQ045PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 144 °C, rectangular waveform 240
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 3450
TJ = 25 °C, IAS = 26 A, L = 1 mH 324 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
RRM
applied
25 000
48 A
A
Document Number: 94463 For technical questions, contact: ind-modules@vishay.com Revision: 06-May-08 1
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241NQ045PbF
Vishay High Power Products
Schottky Rectifier, 240 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
240 A
Maximum forward voltage drop See fig. 1
V
FM
480 A 1.11
(1)
240 A
480 A 0.86
Maximum reverse leakage current See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
TJ = 25 °C
(1)
T
= 125 °C 1120
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 14 800 pF
T
From top of terminal hole to mounting plane 5.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.80
0.64
20
10 000 V/µs
Note
(1)
Pulse width < 500 µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Terminal torque
minimum
maximum 4 (35.4)
minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
T
, T
J
Stg
DC operation
R
thJC
R
thCS
See fig. 4
Mounting surface, smooth and greased 0.05
- 55 to 175 °C
0.19
30 g
1.06 oz.
3 (26.5)
Non-lubricated threads
(lbf · in)
V
mA
°C/W
N · m
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Document Number: 94463
2 Revision: 06-May-08
241NQ045PbF
1000
Tj = 175°C
(A)
100
F
10
Instantaneous Forward Current - I
Tj = 125°C
Schottky Rectifier, 240 A
Vishay High Power Products
10000
T = 175˚C
1000
(mA)
100
R
0.1
Reverse Current - I
0.01
0.001
Fig. 2 - Typical Values of Reverse Current vs.
10000
(pF)
T
J
150˚C
125˚C
10
1
01020304050
100˚C
75˚C
50˚C
25˚C
Reverse Voltage - V R (V)
Reverse Voltage
T = 25˚C
J
Tj = 25°C
1
0.0 0.5 1.0 1.5 2.0
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
D = 0.75
(°C/W)
thJC
Thermal Impedance Z
0.001
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.20
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Junction Capacitance - C
1000
0 102030405060
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94463 For technical questions, contact: ind-modules@vishay.com
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Revision: 06-May-08 3
241NQ045PbF
Vishay High Power Products
180
170
160
150
140
130
Square wave (D=0.50) 80% rated Vr applied
120
110
Allowable Case Temperature (°C)
see note (1)
100
0 50 100 150 200 250 300
Average Forward Current - I
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
F (AV)
(A)
Schottky Rectifier, 240 A
(A)
100000
FSM
At Any Rated Load Condition And With Rated V Applied Following Surge
RRM
250
200
150
100
Average Power Loss (Watts)
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
RMS limit
DC
50
0
0 50 100 150 200 250 300 350
Average Forward Current - I
F (AV)
Fig. 6 - Forward Power Loss Characteristics
(A)
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
F(AV)
D.U.T.
Current monitor
) x R
REV
x VFM at (I
10000
Non-Repetitive Surge Current - I
1000
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
IRFP460
R
g
= 25 Ω
Freewheel
diode
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
;
thJC
/D) (see fig. 6);
F(AV)
R
High-speed
switch
V
= 25 V
d
+
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Document Number: 94463
4 Revision: 06-May-08
241NQ045PbF
Schottky Rectifier, 240 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95020
24 1 N Q 045 PbF
51324
- Average current rating (x 10)
1
2 - Product silicon identification
3 - N = Not isolated
4
- Q = Schottky rectifier diode
5 - Voltage rating (045 = 45 V)
6 - Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
6
Document Number: 94463 For technical questions, contact: ind-modules@vishay.com Revision: 06-May-08 5
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DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20) 4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3
- 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82) 20 (0.78)
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
Document Number: 95020 For technical questions, contact: indmodules@vishay.com Revision: 20-May-09 1
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