Vishay 21TT100 Data Sheet

21TT100

Vishay High Power Products

High Performance

Schottky Generation 5.0, 20 A

FEATURES

• 175 °C high performance Schottky diode

Cathode to

•

Very low forward voltage drop

•

Extremely low reverse leakage

RoHS

base 2

•

Optimized VF vs. IR trade off for high efficiency

COMPLIANT

•

Increased ruggedness for reverse avalanche capability

• RBSOA available

TO-220AB

•

Negligible switching losses

Anode 1

Anode 3

• Submicron trench technology

•

Full lead (Pb)-free and RoHS compliant devices

•

Designed and qualified for industrial level

APPLICATIONS

• High efficiency SMPS

PRODUCT SUMMARY

•

Automotive

IF(AV)

20 A

•

High frequency switching

VR

100 V

•

Output rectification

VF at 20 A at 125 °C

0.68 V

•

Reverse battery protection

• Freewheeling

•

Dc-to-dc systems

• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

VRRM

100

V

VF

20 Apk, TJ = 125 °C (typical, per leg)

0.65

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

21TT100

UNITS

Maximum DC reverse voltage

VR

TJ = 25 °C

100

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

50 % duty cycle at TC = 142 °C, rectangular waveform

20

Maximum peak one cycle

5 µs sine or 3 µs rect. pulse

Following any rated

660

A

non-repetitive surge current

IFSM

load condition and with

10 ms sine or 6 ms rect. pulse

220

at TJ = 175 °C

rated VRRM applied

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 1.5 A, L = 60 mH

67.5

mJ

Limited by frequency of operation and time pulse duration so

IAS at

Repetitive avalanche current

IAR

that TJ < TJ max. IAS at TJ max. as a function of time pulse

A

TJ max.

See fig. 8

		www.vishay.com
Document Number: 94404	For technical questions, contact: [e-mail]
Revision: 05-Sep-08		1

21TT100

Vishay High Power Products				High Performance
			Schottky Generation 5.0, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		TYP.		MAX.			UNITS
				20 A	TJ = 25 °C	-		0.80
Forward voltage drop		VFM (1)		40 A		-		0.95			V
				20 A	TJ = 125 °C	-		0.68
				40 A		-		0.82
Reverse leakage current		IRM (1)		TJ = 25 °C	VR = Rated VR	-		150			µA
				TJ = 125 °C		-		6			mA
Junction capacitance		CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		850		-			pF
Series inductance		LS		Measured lead to lead 5 mm from package body		8.0		-			nH
Maximum voltage rate of change		dV/dt		Rated VR		-		10 000			V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES				UNITS
Maximum junction and		TJ, TStg				- 55 to 175					°C
storage temperature range
Maximum thermal resistance,		RthJC		DC operation		2
junction to case
											°C/W
Typical thermal resistance,		RthCS		Mounting surface, smooth and greased		0.5
case to heatsink
Approximate weight						2					g
						0.07					oz.
Mounting torque	minimum					6 (5)				kgf · cm
										(lbf · in)
	maximum					12 (10)
Marking device				Case style TO-220AB			21TT100

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94404
2		Revision: 05-Sep-08

		21TT100
	High Performance	Vishay High Power Products
	Schottky Generation 5.0, 20 A

	100
		Tj = 175°C
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>-I
<![if ! IE]> <![endif]>InstantaneousForwardCurrent	10
				Tj = 125°C
			Tj = 25°C
	1
	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6

ForwardVoltageDrop-VFM(V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

	100
		175°C
<![if ! IE]> <![endif]>(mA)	10	150°C
		125°C
<![if ! IE]> <![endif]>R	1	100°C
<![if ! IE]> <![endif]>-I
<![if ! IE]> <![endif]>ReverseCurrent	0.1	75°C
	0.01	50°C
	0.001	25°C

0.0001 0 10 20 30 40 50 60 70 80 90 100

ReverseVoltage-VR(V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

1000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>JunctionCapacitance-C
100
0	20	40	60	80	100

ReverseVoltage-VR(V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

	10
<![if ! IE]> <![endif]>ThermalImpedanceZthJC(°C/W)	D = 0.75
	D = 0.50
	1
	D = 0.33
	D = 0.25
	D = 0.20
	0.1
			Single Pulse
		(Thermal Resistance)
	0.01						10
	0.00001	0.0001	0.001	0.01	0.1	1
			t1,RectangularPulseDuration(Seconds)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94404	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 05-Sep-08		3