TO-220AB
Anode 1 Anode 3
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 20 A at 125 °C 0.68 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
FEATURES
• 175 °C high performance Schottky diode
Cathode to
base 2
20 A
100 V
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
21TT100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
20 Apk, TJ = 125 °C (typical, per leg) 0.65
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 21TT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
= 175 °C
at T
J
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 142 °C, rectangular waveform 20
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 220
TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67.5 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated
load condition and with
rated V
RRM
applied
T
660
I
AS
max.
J
at
A
A
Document Number: 94404 F o r t e chnical qu es tions , co ntact : diode s-tech@ v isha y . com
Revision: 05-Sep-08 1
www.vishay.com
21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
20 A
Forward voltage drop V
FM
(1)
20 A
40 A - 0.95
40 A - 0.82
Reverse leakage current I
Junction capacitance C
Series inductance L
RM
T
= 125 °C - 6 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 850 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 21TT100
, T
T
J
Stg
R
DC operation 2
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0 . 8 0
-0 . 6 8
- 150 µA
- 10 000 V/µs
- 55 to 175 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
www.vishay.com F o r technical questi ons , contact: diodes-tech@visha y .com
Document Number: 94404
2 Revision: 05-Sep-08
21TT100
100
Tj = 175°C
(A)
F
10
Tj = 125°C
Instantaneous Forward Current - I
High Performance
Schottky Generation 5.0, 20 A
100
10
(mA)
R
0.1
0.01
Reverse Current - I
0.001
0.0001
1000
(pF)
T
Vishay High Power Products
175°C
150°C
1
0 102030405060708090100
Fig. 2 - Typical Values of Reverse Current vs.
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Reverse Voltage
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
(°C/W)
0.1
Single Pu lse
Thermal Impedance ZthJC
(Thermal Resistance)
0.01
0.00001 0.0001 0.001 0.01 0.1 1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance - C
100
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
Document Number: 94404 F o r t e chnical qu es tions , co ntact : diode s-tech@ v isha y . com
www.vishay.com
Revision: 05-Sep-08 3
21TT100
Vishay High Power Products
180
160
140
Square wave (D=0.50)
120
80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
100
0 5 10 15 20 25 30
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
FSM(A)
High Performance
Schottky Generation 5.0, 20 A
Average Power Loss - (Watts)
(A)
(AV)
1000
20
15
10
5
0
180°
120°
90°
60°
30°
RMS Limit
0 5 10 15 20 25 30
Average Forward Current - IF
DC
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
www.vishay.com F o r technical questi ons , contact: diodes-tech@visha y .com
Document Number: 94404
4 Revision: 05-Sep-08
21TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 20 A
100
Tj = 25°C
10
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Tj = 125°C
Tj = 175°C
001 01 1
Rectangular Pulse Duration ( μsec)
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 25°C
Tj = 125°C
Tj = 175°C
001 01 1
Rectangular Pulse Duration ( μsec)
Document Number: 94404 F o r t e chnical qu es tions , co ntact : diode s-tech@ v isha y . com
Revision: 05-Sep-08 5
www.vishay.com
21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ORDERING INFORMATION TABLE
Device code
Dimensio ns http://ww w .vishay. c om/do c ?952 22
Part marking information h ttp://ww w .vishay. c om/do c ?952 25
21 T T 100
13 24
1 - Current rating (20 A)
- Package:
2
T = TO-220
- T = Trench
3
4 - Voltage code (100 V)
Tube standard pack quantity: 50 pieces
L I NKS TO REL A TED DOC U MENTS
www.vishay.com F o r technical questi ons , contact: diodes-tech@visha y .com
6 Revision: 05-Sep-08
Document Number: 94404
Assemb ly
lot code
xxxxxxxx
V P119X
AC
TO-220AB
Part numb er
Produ ct v ersion (optional):
P = Lead (Pb )-free
N one = Standard
Date code:
Year 1 = 2001
Week 19
Line X
Part Marking Information
Vishay High Power Products
Example: This is a xxxxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assemb ly line “X”
Document Number: 95225 F o r technical questions concer ning discrete products , cont act: diodes-tech@visha y .com
Revision: 30-Oct-08 F o r te chnical qu estions con c er ning module pro ducts , contact: in d-modules@visha y . com
www.vishay.com
1
DIMENSIONS in millimeters and inches
A
Ø P
E
Q
TO-220AB
B
A
A1
H1
S eating plane
A
Outline Dimensions
Vishay High Power Products
E
H1
Thermal pad
D
(3)
SYMBOL
Detail B
D1
3 241
D D
CC
2 x e
e1
c
S ection C - C and D - D
0.015 A BC
b, b2
b1, b3
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
(2)
L1
C
L
MM
c1
C
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - S ource
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
A2
A
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES SYMBOL
Sheet 2
θ
View A - A
123
C
C
3 x b2 3 x b
Detail B
MILLIMETERS INCHES
D2
E1
D
D
L1
NOTES
A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355
A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507
A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3
b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350
b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC
b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270
b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580
c 0.36 0.61 0.014 0.024 L1 3.55 3.96 0.140 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120
D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimensions: inches
Document Number: 95222 For tec hnical questions concer ning di scr e te pr oducts, contact: dio d es tec h @ v i s hay . com
Revision: 16-Nov-09 For tec h ni ca l ques tio n s co nce r ning module pr odu c ts, contact: indmo d ule s @v is ha y . c o m
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1