Vishay 21TT100 Data Sheet

TO-220AB
Anode 1 Anode 3
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 20 A at 125 °C 0.68 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
FEATURES
• 175 °C high performance Schottky diode
Cathode to
base 2
20 A
100 V
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
21TT100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
20 Apk, TJ = 125 °C (typical, per leg) 0.65
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 21TT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
= 175 °C
at T
J
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 142 °C, rectangular waveform 20
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 220
TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67.5 mJ
AS
Limited by frequency of operation and time pulse duration so that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load condition and with rated V
RRM
applied
T
660
I
AS
max.
J
at
A
A
Document Number: 94404 For technical questions, contact: diodes-tech@vishay.com Revision: 05-Sep-08 1
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21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
20 A
Forward voltage drop V
FM
(1)
20 A
40 A - 0.95
40 A - 0.82
Reverse leakage current I
Junction capacitance C
Series inductance L
RM
T
= 125 °C - 6 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 850 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 21TT100
, T
T
J
Stg
R
DC operation 2
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.80
-0.68
- 150 µA
- 10 000 V/µs
- 55 to 175 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
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Document Number: 94404
2 Revision: 05-Sep-08
0
21TT100
100
Tj = 175°C
(A)
F
10
Tj = 125°C
Instantaneous Forward Current - I
High Performance
Schottky Generation 5.0, 20 A
100
10
(mA)
R
0.1
0.01
Reverse Current - I
0.001
0.0001
1000
(pF)
T
Vishay High Power Products
175°C
150°C
1
0 102030405060708090100
Fig. 2 - Typical Values of Reverse Current vs.
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Reverse Voltage
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
(°C/W)
0.1
Single Pulse
Thermal Impedance ZthJC
(Thermal Resistance)
0.01
0.00001 0.0001 0.001 0.01 0.1 1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance - C
100
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
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21TT100
Vishay High Power Products
180
160
140
Square wave (D=0.50)
120
80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
100
0 5 10 15 20 25 30
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
FSM(A)
High Performance
Schottky Generation 5.0, 20 A
Average Power Loss - (Watts)
(A)
(AV)
1000
20
15
10
5
0
180° 120°
90° 60° 30°
RMS Limit
0 5 10 15 20 25 30
Average Forward Current - IF
DC
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
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21TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 20 A
100
Tj = 25°C
10
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 25°C
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94404 For technical questions, contact: diodes-tech@vishay.com Revision: 05-Sep-08 5
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21TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95222
Part marking information http://www.vishay.com/doc?95225
21 T T 100
1324
1 - Current rating (20 A)
- Package:
2
T = TO-220
- T = Trench
3
4 - Voltage code (100 V)
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
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Document Number: 94404
Assembly lot code
xxxxxxxx
V P119X
AC
TO-220AB
Part number
Product version (optional): P = Lead (Pb)-free None = Standard Date code: Year 1 = 2001 Week 19 Line X
Part Marking Information
Vishay High Power Products
Example: This is a xxxxxxxx with assembly lot code AC, assembled on WW 19, 2001 in the assembly line “X”
Document Number: 95225 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 30-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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DIMENSIONS in millimeters and inches
A
Ø P
E
Q
TO-220AB
B
A
A1
H1
Seating plane
A
Outline Dimensions
Vishay High Power Products
E
H1
Thermal pad
D
(3)
SYMBOL
Detail B
D1
3241
DD
CC
2 x e
e1
c
Section C - C and D - D
0.015 ABC
b, b2
b1, b3
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
(2)
L1
C
L
MM
c1
C
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
A2
A
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
NOTES SYMBOL
Sheet 2
θ
View A - A
123
C
C
3 x b2 3 x b
Detail B
MILLIMETERS INCHES
D2
E1
D
D
L1
NOTES
A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355 A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507 A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3
b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350 b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270 b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580
c 0.36 0.61 0.014 0.024 L1 3.55 3.96 0.140 0.150 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147 c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120
D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1 and c1 apply to base metal only
(5)
Controlling dimensions: inches
Document Number: 95222 For technical questions concerning discrete products, contact: diodestech@vishay.com Revision: 16-Nov-09 For technical questions concerning module products, contact: indmodules@vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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