Vishay 21DQ06 Data Sheet
DO-204AL
Schottky Rectifier, 2 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
21DQ06
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
2 A
60 V
DESCRIPTION
The 21DQ06 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
V
F
T
J
Rectangular waveform 2 A
60
2 Apk, TJ = 125 °C 0.55
Range - 40 to 150 °C
V
VOLTAGE RATINGS
PARAMETER SYMBOL 21DQ06 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 93280 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Nov-08 1
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 106 °C, rectangular waveform 2
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 60
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
= 1 A, L = 8 mH 4.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
340
0.5 A
www.vishay.com
A
21DQ06
Vishay High Power Products
Schottky Rectifier, 2 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum forward voltage drop V
Maximum reverse leakage current I
RM
Typical junction capacitance C
Typical series inductance L
FM
2 A
4 A 0.67 0.75
(1)
2 A
4 A 0.61 0.67
TJ = 25 °C
(1)
T
S
T
= 125 °C 7.0 10
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 120 pF
Measured lead to lead 5 mm from package body 8.0 nH
T
J
T
J
V
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
= 25 °C
= 125 °C
= Rated V
R
VALUES
TYP. MAX.
0.53 0.60
0.49 0.55
0.02 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device Case style DO-204AL (D-41) 21DQ06
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
See fig. 4
- 40 to 150 °C
100
25
0.33 g
0.012 oz.
UNITS
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93280
2 Revision: 06-Nov-08
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