Vishay 21DQ04 Data Sheet

21DQ04

Vishay High Power Products

Schottky Rectifier, 2 A

FEATURES

				•	Low profile, axial leaded outline
				•	High frequency operation
				•	Very low forward voltage drop
Cathode		Anode		•	High purity, high temperature epoxy encapsulation for
					enhanced mechanical strength and moisture resistance
				• Guard ring for enhanced ruggedness and long term
DO-204AL					reliability
				•	Lead (Pb)-free plating
				•	Designed and qualified for industrial level

PRODUCT SUMMARY

IF(AV)	2 A
VR	40 V

DESCRIPTION

The 21DQ04 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

	SYMBOL	CHARACTERISTICS	VALUES	UNITS
	IF(AV)	Rectangular waveform	2	A
	VRRM		40	V
	VF	2 Apk, TJ = 125 °C	0.5
	TJ	Range	- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	21DQ04	UNITS
	Maximum DC reverse voltage	VR	40	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 112 °C, rectangular waveform			2
	See fig. 4
							A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse		Following any rated load	420
	non-repetitive surge current	IFSM			condition and with rated
			10 ms sine or 6 ms rect. pulse			70
	See fig. 6				VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1.0 A, L = 10 mH			5.0	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs			1.0	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 93279	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 06-Nov-08		1

21DQ04

Vishay High Power Products

Schottky Rectifier, 2 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

2 A

TJ = 25 °C

0.49

0.55

Maximum forward voltage drop

VFM (1)

4 A

0.60

0.65

V

2 A

TJ = 125 °C

0.42

0.5

4 A

0.56

0.62

Maximum reverse leakage current

IRM (1)

TJ = 25 °C

VR = Rated VR

0.01

0.50

mA

TJ = 125 °C

5.2

10

Typical junction capacitance

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

130

pF

Typical series inductance

LS

Measured lead to lead 5 mm from package body

8.0

nH

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

T

(1), T

Stg

- 40 to 150

°C

temperature range

J

Maximum thermal resistance,

RthJA

DC operation

100

junction to ambient

Without cooling fin

°C/W

Typical thermal resistance,

RthJL

DC operation

25

junction to lead

See fig. 4

Approximate weight

0.33

g

0.012

oz.

Marking device

Case style DO-204AL (D-41)

21DQ04

Note

(1)

dPtot

1

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dTJ

RthJA

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93279
2		Revision: 06-Nov-08