Vishay 21DQ04 Data Sheet

DO-204AL

Schottky Rectifier, 2 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

Cathode Anode

• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long term
reliability

• Lead (Pb)-free plating

• Designed and qualified for industrial level

21DQ04

Vishay High Power Products

PRODUCT SUMMARY

I

F(AV)

V

R

2 A

40 V

DESCRIPTION

The 21DQ04 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

V

F

T

J

Rectangular waveform 2 A

40

2 Apk, TJ = 125 °C 0.5

Range - 40 to 150 °C

V

VOLTAGE RATINGS

PARAMETER SYMBOL 21DQ04 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

40 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 4

Maximum peak one cycle
non-repetitive surge current
See fig. 6

Non-repetitive avalanche energy E

Repetitive avalanche current I

Document Number: 93279 For technical questions, contact: [e-mail]
Revision: 06-Nov-08 1

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 112 °C, rectangular waveform 2

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 70

TJ = 25 °C, I

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

= 1.0 A, L = 10 mH 5.0 mJ

AS

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

420

1.0 A

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A

21DQ04

Vishay High Power Products

Schottky Rectifier, 2 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum forward voltage drop V

Maximum reverse leakage current I

RM

Typical junction capacitance C

Typical series inductance L

FM

2 A

4 A 0.60 0.65

(1)

2 A

4 A 0.56 0.62

TJ = 25 °C

(1)

T

S

T

= 125 °C 5.2 10

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 130 pF

Measured lead to lead 5 mm from package body 8.0 nH

T

J

T

J

V

R

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

= 25 °C

= 125 °C

= Rated V

R

VALUES

TYP. MAX.

0.49 0.55

0.42 0.5

0.01 0.50

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
junction to lead

Approximate weight

Marking device Case style DO-204AL (D-41) 21DQ04

Note

dP

(1)

------------­dT

1

tot

J

thermal runaway condition for a diode on its own heatsink

--------------<
R

thJA

(1)

, T

T

J

Stg

R

thJA

R

thJL

DC operation
Without cooling fin

DC operation
See fig. 4

- 40 to 150 °C

100

25

0.33 g

0.012 oz.

UNITS

V

mA

°C/W

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Document Number: 93279

2 Revision: 06-Nov-08

21DQ04

Schottky Rectifier, 2 A

10

F

T = 150°C

J

T = 125°C

1

Instantaneous Forward Current - I (A)

J

T = 2 5° C

J

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Vishay High Power Products

1000

T

100

Junction Capacitance - C (pF)

10

010203040

150

120

T = 2 5° C

J

Re v e rs e Vo l t a g e - V ( V )

R

DC

0.1

00.30.60.91.2

Forwa rd Voltag e Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop Characteristics

100

T = 150°C

J

10

125°C

R

Re ve r se Cu rre n t - I ( m A )

0.0001

1

0.1

0.01

0.001

100°C

75°C

50°C

25°C

010203040

Re v e r se V o lt a g e - V ( V )

R

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

90

Sq u a r e w a v e ( D = 0 . 5 0)
80% Rat ed V a pp lied

60

30

Allowable Lead Temperature - (°C)

= 1/8 inch

see note ( 1)

0

0123

Average Forward Current - I (A)

R

F( A V )

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

2

D = 0. 20

1.6

1.2

0.8

0.4

Averag e Power Lo ss - (Wat ts)

0

D = 0. 25
D = 0. 33
D = 0. 50
D = 0. 75

RM S Li m i t

0123

Ave rag e Forw a rd Current - I (A)

DC

F(AV)

Fig. 5 - Forward Power Loss Characteristics

Note

(1)

Formula used: TL = TJ - (Pd + Pd
Pd = Forward power loss = I

F(AV)

) x R

REV

x VFM at (I

;

thJL

/D) (see fig. 5); Pd

F(AV)

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

R

Document Number: 93279 For technical questions, contact: [e-mail]

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Revision: 06-Nov-08 3

21DQ04

Vishay High Power Products

FSM

Non-Rep et it ive Surg e Current - I (A )

ORDERING INFORMATION TABLE

Device code

Schottky Rectifier, 2 A

1000

100

At Any Rated Loa d Condition
And With Rated V Applied
Fo l lo w i ng Su rg e

10

10 100 1000 10000

Sq ua re Wave Pulse Durat ion - t (m icrosec )

Fig. 6 - Maximum Non-Repetitive Surge Current

21 D Q 04 TR

RRM

p

51324

- 21 = 2.1 A (axial and small packages - current is x 10)

1

- D = DO-41 package

2

3

- Q = Schottky Q.. series

4

- 04 = Voltage rating: 40 V

- TR = Tape and reel package (5000 pcs)

5

TB = Tape and box package (ammunition - 3000 pcs)

None = Box package (1000 pcs)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95241

Part marking information http://www.vishay.com/doc?95304

Packaging information http://www.vishay.com/doc?95308

www.vishay.com For technical questions, contact: [e-mail]
4 Revision: 06-Nov-08

Document Number: 93279

DIMENSIONS in millimeters (inches)

2.70 (0.106)

2.29 (0.090)

DIA.

2.70 (0.106)

2.29 (0.090)

DIA.

0.86 (0.034)

0.72 (0.028)
(2 places)

27.0 (1.06) MIN.
(2 places)

5.21 (0.205)
MAX.

5.21 (0.205)
MAX.

27.0 (1.06) MIN.
(2 places)

1.27 (0.050) MAX.
Flash (2 places)

DIA.

0.86 (0.034)

0.72 (0.028)
(2 places)

DIA.

Cathode band

Outline Dimensions

Vishay Semiconductors

Axial DO-204AL (DO-41)

Document Number: 95241 For technical questions, contact: [e-mail]
Revision: 22-Nov-07 1

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