Vishay 20MT120UFP Data Sheet

20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

MTP

•Positive V

• 10 μs short circuit capability

•HEXFRED® antiparallel diodes with ultrasoft reverse
recovery

• Low diode V

• Square RBSOA

• Aluminum nitride DBC

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

temperature coefficient

CE(on)

F

PRODUCT SUMMARY

V

CES

at TC = 25 °C 40 A

I

C

V

CE(on)

1200 V

3.29 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Rugged with ultrafast performance

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation (only IGBT) P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 40

= 106 °C 20

T

C

TC = 106 °C 25

Any terminal to case, t = 1 minute 2500

TC = 25 °C 240

T

= 100 °C 96

C

1200 V

100

100

100

± 20

A

V

W

Document Number: 94505 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 1

www.vishay.com

20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

Transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Note

(1)

I

includes also opposite leg overall leakage

CES

(BR)CES

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

GES

/ΔT

(1)

VGE = 0 V, IC = 250 μA 1200 - - V

/ΔTJVGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.3 - V/°C

VGE = 15 V, IC = 20 A - 3.29 3.59

= 15 V, IC = 40 A - 4.42 4.66

V

GE

= 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11

V

GE

= 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70

V

GE

= 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27

V

GE

VCE = VGE, IC = 250 μA 4 - 6

VCE = VGE, IC = 3 mA (25 °C to 125 °C) - - 14 - mV/°C

J

VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S

VGE = 0 V, V

= 0 V, V

V

GE

V

= 0 V, V

GE

= 1200 V, TJ = 25 °C - - 250 μA

CE

= 1200 V, TJ = 125 °C - 0.7 3.0

CE

= 1200 V, TJ = 150 °C - 2.9 9.0

CE

VGE = ± 20 V - - ± 250 nA

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

on

off

tot

on

off

tot

ies

oes

res

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

IC = 20 A

= 600 V

V

CC

= 15 V

V

GE

VCC = 600 V, IC = 20 A, VGE = 15 V,

= 5 Ω, L = 1 mH, TJ = 25 °C,

R

g

energy losses include tail and
diode reverse recovery

VCC = 600 V, IC = 20 A, VGE = 15 V,
R

= 5 Ω, L = 1 mH, TJ = 125 °C,

g

energy losses include tail and
diode reverse recovery

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 120 A

T

J

V

= 1000 V, Vp = 1200 V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

= 150 °C

T

J

V

= 900 V, Vp = 1200 V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

- 176 264

-1930

nCGate to emitter charge (turn-on) Q

- 89 134

-0.92-

-0.46-

-1.38-

-1.29-

mJ

-0.81-

-2.1-

- 2530 3790

- 344 516

pFOutput capacitance C

- 78 117

Fullsquare

10 - - μs

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94505

2 Revision: 01-Mar-10

20MT120UFP

"Full Bridge" IGBT MTP

Vishay High Power Products

(Ultrafast NPT IGBT), 40 A

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IC = 20 A - 2.48 2.94

= 40 A - 3.28 3.90

I

C

= 20 A, TJ = 125 °C - 2.44 2.84

Diode forward voltage drop V

Reverse recovery energy of the diode E

Diode reverse recovery time t

Peak reverse recovery current I

FM

rec

I

C

= 40 A, TJ = 125 °C - 3.45 4.14

I

C

= 20 A, TJ = 150 °C - 2.21 2.93

I

C

VGE = 15 V, Rg = 5 Ω, L = 200 μH

= 600 V, IC = 20 A

V

rr

rr

CC

T

= 125 °C

J

- 420 630 μJ

- 98 150 ns

-3350A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

Case to sink per module R

Clearance External shortest distance in air between 2 terminals 5.5 - -

Creepage

Mounting torque

Weight 66 g

IGBT

J

Stg

R

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

Shortest distance along external surface of the
insulating material between 2 terminals

A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

- 40 - 150

- 40 - 125

- 0.35 0.52

8--

3 ± 10 % Nm

V

°C

°C/WDiode - 0.40 0.61

mm

Document Number: 94505 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 3

www.vishay.com

20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

50

40

30

)A(

C

I

20

10

0

0 20 40 60 80 100 120 140 160

TC(°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

250

200

150

)W(

tot

P

100

1000

100

)A
(

C

I

10

1

10 100 1000 10 000

VCE(V)

Fig. 4 - Reverse Bias SOA

= 150 °C; VGE = 15 V

T

J

100

VGE = 18V

VGE = 15V
VGE = 12V

80

VGE = 10V
VGE = 8.0V

60

)A(

EC

I

40

50

0

0 20 40 60 80 100 120 140 160

TC(°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

10

)A(

C

I

1

0.1

0.01
1 10 100 1000 10000

V

(V)

CE

10 μs

100 μs

1ms

DC

Fig. 3 - Forward SOA

T

= 25 °C; TJ ≤ 150 °C

C

20

0

0 2 4 6 8 10

V

(V)

CE

Fig. 5 - Typical IGBT Output Characteristics

T

= - 40 °C; tp = 80 μs

J

100

VGE = 18V

VGE = 15V
VGE = 12V

80

VGE = 10V
VGE = 8.0V

60

)A(

EC

I

40

20

0

0 2 4 6 8 10

V

(V )

CE

Fig. 6 - Typical IGBT Output Characteristics

T

= 25 °C; tp = 80 μs

J

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Document Number: 94505

4 Revision: 01-Mar-10