Vishay 20MT120UFP Data Sheet

20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

MTP

•Positive V

• 10 μs short circuit capability

•HEXFRED® antiparallel diodes with ultrasoft reverse
recovery

• Low diode V

• Square RBSOA

• Aluminum nitride DBC

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

temperature coefficient

CE(on)

F

PRODUCT SUMMARY

V

CES

at TC = 25 °C 40 A

I

C

V

CE(on)

1200 V

3.29 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Rugged with ultrafast performance

• Outstanding ZVS and hard switching operation

• Low EMI, requires less snubbing

• Excellent current sharing in parallel operation

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation (only IGBT) P

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 40

= 106 °C 20

T

C

TC = 106 °C 25

Any terminal to case, t = 1 minute 2500

TC = 25 °C 240

T

= 100 °C 96

C

1200 V

100

100

100

± 20

A

V

W

Document Number: 94505 For technical questions, contact: [e-mail]
Revision: 01-Mar-10 1

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20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

Transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Note

(1)

I

includes also opposite leg overall leakage

CES

(BR)CES

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

GES

/ΔT

(1)

VGE = 0 V, IC = 250 μA 1200 - - V

/ΔTJVGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.3 - V/°C

VGE = 15 V, IC = 20 A - 3.29 3.59

= 15 V, IC = 40 A - 4.42 4.66

V

GE

= 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11

V

GE

= 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70

V

GE

= 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27

V

GE

VCE = VGE, IC = 250 μA 4 - 6

VCE = VGE, IC = 3 mA (25 °C to 125 °C) - - 14 - mV/°C

J

VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S

VGE = 0 V, V

= 0 V, V

V

GE

V

= 0 V, V

GE

= 1200 V, TJ = 25 °C - - 250 μA

CE

= 1200 V, TJ = 125 °C - 0.7 3.0

CE

= 1200 V, TJ = 150 °C - 2.9 9.0

CE

VGE = ± 20 V - - ± 250 nA

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

on

off

tot

on

off

tot

ies

oes

res

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

IC = 20 A

= 600 V

V

CC

= 15 V

V

GE

VCC = 600 V, IC = 20 A, VGE = 15 V,

= 5 Ω, L = 1 mH, TJ = 25 °C,

R

g

energy losses include tail and
diode reverse recovery

VCC = 600 V, IC = 20 A, VGE = 15 V,
R

= 5 Ω, L = 1 mH, TJ = 125 °C,

g

energy losses include tail and
diode reverse recovery

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

= 150 °C, IC = 120 A

T

J

V

= 1000 V, Vp = 1200 V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

= 150 °C

T

J

V

= 900 V, Vp = 1200 V

CC

R

= 5 Ω, VGE = + 15 V to 0 V

g

- 176 264

-1930

nCGate to emitter charge (turn-on) Q

- 89 134

-0.92-

-0.46-

-1.38-

-1.29-

mJ

-0.81-

-2.1-

- 2530 3790

- 344 516

pFOutput capacitance C

- 78 117

Fullsquare

10 - - μs

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Document Number: 94505

2 Revision: 01-Mar-10

20MT120UFP

"Full Bridge" IGBT MTP

Vishay High Power Products

(Ultrafast NPT IGBT), 40 A

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IC = 20 A - 2.48 2.94

= 40 A - 3.28 3.90

I

C

= 20 A, TJ = 125 °C - 2.44 2.84

Diode forward voltage drop V

Reverse recovery energy of the diode E

Diode reverse recovery time t

Peak reverse recovery current I

FM

rec

I

C

= 40 A, TJ = 125 °C - 3.45 4.14

I

C

= 20 A, TJ = 150 °C - 2.21 2.93

I

C

VGE = 15 V, Rg = 5 Ω, L = 200 μH

= 600 V, IC = 20 A

V

rr

rr

CC

T

= 125 °C

J

- 420 630 μJ

- 98 150 ns

-3350A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

Case to sink per module R

Clearance External shortest distance in air between 2 terminals 5.5 - -

Creepage

Mounting torque

Weight 66 g

IGBT

J

Stg

R

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

Shortest distance along external surface of the
insulating material between 2 terminals

A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

- 40 - 150

- 40 - 125

- 0.35 0.52

8--

3 ± 10 % Nm

V

°C

°C/WDiode - 0.40 0.61

mm

Document Number: 94505 For technical questions, contact: [e-mail]
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20MT120UFP

Vishay High Power Products

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

50

40

30

)A(

C

I

20

10

0

0 20 40 60 80 100 120 140 160

TC(°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

250

200

150

)W(

tot

P

100

1000

100

)A
(

C

I

10

1

10 100 1000 10 000

VCE(V)

Fig. 4 - Reverse Bias SOA

= 150 °C; VGE = 15 V

T

J

100

VGE = 18V

VGE = 15V
VGE = 12V

80

VGE = 10V
VGE = 8.0V

60

)A(

EC

I

40

50

0

0 20 40 60 80 100 120 140 160

TC(°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

10

)A(

C

I

1

0.1

0.01
1 10 100 1000 10000

V

(V)

CE

10 μs

100 μs

1ms

DC

Fig. 3 - Forward SOA

T

= 25 °C; TJ ≤ 150 °C

C

20

0

0 2 4 6 8 10

V

(V)

CE

Fig. 5 - Typical IGBT Output Characteristics

T

= - 40 °C; tp = 80 μs

J

100

VGE = 18V

VGE = 15V
VGE = 12V

80

VGE = 10V
VGE = 8.0V

60

)A(

EC

I

40

20

0

0 2 4 6 8 10

V

(V )

CE

Fig. 6 - Typical IGBT Output Characteristics

T

= 25 °C; tp = 80 μs

J

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Document Number: 94505

4 Revision: 01-Mar-10

20MT120UFP

(Ultrafast NPT IGBT), 40 A

100

VGE = 18V

VGE = 15V
VGE = 12V

80

VGE = 10V
VGE = 8.0V

60

)A(

EC

I

40

20

0

0246810

V

(V)

CE

Fig. 7 - Typical IGBT Output Characteristics

120

100

80

)
A(

60

F

I

40

20

0

Fig. 8 - Typical Diode Forward Characteristics

T

= 125 °C; tp = 80 μs

J

-40°C
25°C
125°C

0.0 1.0 2.0 3.0 4.0 5.0

V(V)

F

t

= 80 μs

p

"Full Bridge" IGBT MTP

20

18

16

14

12

)V(

EC

10

V

8

6

4

2

0

20

18

16

14

12

(V)

EC

10

V

8

6

4

2

0

Vishay High Power Products

ICE = 10A

I

= 20A

CE

I

= 40A

CE

5 10 15 20

V

(V)

GE

(V)

CE

CE

vs. V

ICE = 10A

I

CE

I

CE

vs. V

GE

= 20A

= 40A

GE

Fig. 10 - Typical V

TJ = 25 °C

5 10 15 20

V

GE

Fig. 11 - Typical V

TJ = 125 °C

20

18

16

14

12

)V(

EC

10

V

8

6

4

2

0

5101520

V

GE

Fig. 9 - Typical V

TJ = - 40 °C

(V)

CE

vs. V

ICE = 40A

I

= 20A

CE

I

= 10A

CE

GE

300

250

200

)A(

150

EC

I

100

50

0

0 5 10 15 20

TJ = 25°C

TJ= 150°C

VGE(V)

Fig. 12 - Typical Transfer Characteristics

V

= 50 V; tp = 10 μs

CE

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Revision: 01-Mar-10 5

20MT120UFP

Vishay High Power Products

2.5

2

1.5

1

Energy (mJ)

0.5

0

0 1020304050

Fig. 13 - Typical Energy Loss vs. I
TJ = 125 °C; L = 1 mH; VCC = 600 V

1000

td (off)

100

10

Switching time (ns)

Eon

R

= 5 Ω; VGE = 15 V

g

tf

td (on)

tr

Eoff

IC (A)

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

1000

100

10

Switching time (ns)

C

)A
(

RR

I

td (off)

tf

td (on)

tr

1

0 1020304050

RG ( Ω )

Fig. 16 - Typical Switching Time vs. R

TJ = 150 °C; L = 1 mH; VCC = 600 V

I

= 6 A; VGE = 15 V

CE

40

Ω

R

5.0

G =

30

20

10

Ω

R

10

G =

Ω

R

30

G =

Ω

R

50

G =

g

1

01020304050

IC (A)

Fig. 14 - Typical Switching Time vs. I

TJ = 125 °C; L = 1 mH; VCC = 600 V

R

= 5 Ω; VGE = 15 V

g

1.2

1

Eon

0.8

0.6

Energy (mJ)

0.4

0.2
0 1020304050

Eoff

RG ( Ω )

Fig. 15 - Typical Energy Loss vs. R

TJ = 125 °C; L = 1 mH; VCC = 600 V

I

= 6 A; VGE = 15 V

CE

C

g

0

0 5 10 15 20 25 30 35

IF(A)

Fig. 17 - Typical Diode I

TJ = 150 °C

40

30

)A(

20

RR

I

10

0

0 10 20 30 40 50 60

RG(

Ω)

Fig. 18 - Typical Diode I

TJ = 150 °C; IF = 5.0 A

vs. I

rr

vs. R

rr

F

g

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Document Number: 94505

6 Revision: 01-Mar-10

τ

20MT120UFP

40

35

30

)
A(

25

RR

I

20

15

10

0 200 400 600 800 1000

diF/dt (A/μs)

Fig. 19 - Typical Diode Irr vs. dIF/dt

V

= 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C

CC

3.0

2.5

2.0

)Cμ(

1.5

RR

Q

50

30

Ω

Ω

1.0

0.5

0.0

0 200 400 600 800 1000 1200

diF /dt (A/μs)

Fig. 20 - Typical Diode Q

V

= 400 V; VGE = 15 V; TJ = 150 °C

CC

10

5.0

Ω

10A

vs. dIF/dt

rr

20A

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

Ω

30A

Vishay High Power Products

10000

Cies

)Fp( ecnaticapaC

1000

100

10

0 20 40 60 80 100

V

(V )

CE

Fig. 21 - Typical Capacitance vs. V

16

14

12

10

)
V(

8

EG

V

6

4

2

0

0 40 80 120 160 200

Fig. 22 - Typical Gate Charge vs. V

VGE = 0 V; f = 1 MHz

QG, Total Gate Charge (nC)

ICE = 5.0 A; L = 600 μH

Coes

Cres

CE

600V

GE

1

D = 0.50

)

CJht

Z ( esnopseR lamrehT

0.01

0.001

0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THE RM A L RES PONSE )

R

R

1

R

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

2

3

R

2

3

τ

3

τ

3

Ri (°C/W) τi (sec)

τ

C

0.161 0.000759

0.210 0.017991

0.147 0.06094

R

1

τ

2

τ

2

Notes:

1. Duty Factor D = t1/t2

2. Pe ak Tj = P dm x Zt hj c + Tc

0.0001
1E-006 1E-005 0.0001 0.001 0. 01 0.1 1 10

t1, Rectangular Pul se Duration (sec)

Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

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Revision: 01-Mar-10 7

20MT120UFP

τ

Vishay High Power Products

1

D = 0.50

)

CJht

Z ( esno

0.01

pseR lamrehT

0.001

0.0001

0

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE
( THE RM A L R E SP ONSE )

1E-006 1E-005 0.0001 0.001 0.01 0. 1 1 10

Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

L

D.U.T.

1 K

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

R

1

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

t1, Rec t an gul a r P ul se D ura ti on (s e c )

V

CC

+

-

R

R

2

3

R

2

τ

3

τ

Ri (°C/W) τi (sec)

3

τ

C

0.238 0.001017

0.312 0.033081

3

0.061 0.77744

R

τ

2

τ

2

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Driver

D.U.T.

D

+

C

900 V

-

Fig. CT.1 - Gate Charge Circuit (Turn-Off)

L

Diode clamp/

Fig. CT.3 - S.C. SOA Circuit

D.U.T.

L

+

-

80 V

+

-

R

g

Fig. CT.2 - RBSOA Circuit

D.U.T

1000 V

- 5 V

D.U.T./

driver

R

g

Fig. CT.4 - Switching Loss Circuit

+

-

V

CC

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Document Number: 94505

8 Revision: 01-Mar-10

20MT120UFP

ORDERING INFORMATION TABLE

Device code

"Full Bridge" IGBT MTP

(Ultrafast NPT IGBT), 40 A

9, 10

4

3

15, 16

13, 14

2

1

11, 12

Fig. 25 - Electrical diagram

20 MT 120 U F P

5

6

7

8

Vishay High Power Products

CIRCUIT CONFIGURATION

- Current rating (20 = 20 A)

1

- Essential part number

2

- Voltage code (120 = 1200 V)

3

- Speed/type (U = Ultrafast IGBT)

4

- Circuit configuration (F = Full bridge)

5

- P = Lead (Pb)-free

6

51324

6

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95245

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Revision: 01-Mar-10 9

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DIMENSIONS in millimeters

Ø 5

Ø 1.1

12 ± 0.5

4

20.5

2.5

31.8

33

41

32

13

14

11

12

9

10

5

6

15

16

7

8

R5.75 (x 2)

27.5

11.4 ± 0.1

11.3 ± 0.1

Ø 5.2 x 3

3 ± 0.1

8 ± 0.1

0.3 ± 0.1

7

6.6 ± 0.1

7.4 ± 0.1

3 ± 0.1

5.3 ± 0.1

5.3

± 0.1

45°

0.6 x h1.2

63.5 ± 0.25

48.7

44.5

39.5

6.6 ± 0.1

7.4 ± 0.1

4.9 ± 0.1

8 ± 0.1

1.3

7 ± 0.1

Outline Dimensions

Vishay Semiconductors

MTP MOSFET/IGBT Full-Bridge

Document Number: 95245 For technical questions, contact: [e-mail]
Revision: 24-Sep-08 1

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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