Vishay 20MT120UFAPBF Data Sheet
MTP
20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
•Positive V
• 10 μs short circuit capability
•HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• Low diode V
• Square RBSOA
•Al2O3 DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
temperature coefficient
CE(on)
F
PRODUCT SUMMARY
V
CES
at TC = 96 °C 20 A
I
C
(typical)
V
CE(on)
= 20 A, 25 °C
at I
C
1200 V
3.29 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode maximum forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation (only IGBT) P
CES
C
CM
LM
FM
GE
ISOL
D
TC = 96 °C 20
Any terminal to case, t = 1 minute 2500
TC = 25 °C 240
T
= 100 °C 96
C
1200 V
100
100
100
± 20
A
V
W
Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Temperature coefficient of breakdown voltage V
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coefficient of threshold voltage V
Transconductance g
Zero gate voltage collector current I
Gate to emitter leakage current I
Note
(1)
I
includes also opposite leg overall leakage
CES
(BR)CES
(BR)CES
CE(on)
GE(th)
GE(th)
fe
CES
GES
/T
(1)
VGE = 0 V, IC = 250 μA 1200 - - V
/TJVGE = 0 V, IC = 3 mA (25 to 125 °C) - + 1.3 - V/°C
VGE = 15 V, IC = 20 A - 3.29 3.59
= 15 V, IC = 40 A - 4.42 4.66
V
GE
= 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11
V
GE
= 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70
V
GE
= 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27
V
GE
VCE = VGE, IC = 250 μA 4 - 6
VCE = VGE, IC = 3 mA (25 to 125 °C) - - 14 - mV/°C
J
VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S
VGE = 0 V, V
= 0 V, V
V
GE
V
= 0 V, V
GE
= 1200 V, TJ = 25 °C - - 250 μA
CE
= 1200 V, TJ = 125 °C - 0.7 3.0
CE
= 1200 V, TJ = 150 °C - 2.9 9.0
CE
VGE = ± 20 V - - ± 250 nA
V
mA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
g
ge
gc
on
off
tot
on
off
tot
ies
oes
res
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
IC = 20 A
= 600 V
V
CC
V
= 15 V
GE
VCC = 600 V, IC = 20 A, VGE = 15 V,
R
= 5 , L = 200 μH, TJ = 25 °C,
g
energy losses include tail and
diode reverse recovery
VCC = 600 V, IC = 20 A, VGE = 15 V,
= 5 , L = 200 μH, TJ = 125 °C,
R
g
energy losses include tail and
diode reverse recovery
VGE = 0 V
V
= 30 V
CC
f = 1.0 MHz
= 150 °C, IC = 120 A
T
J
V
= 1000 V, Vp = 1200 V
CC
= 5 , VGE = + 15 V to 0 V
R
g
T
= 150 °C
J
V
= 900 V, Vp = 1200 V
CC
= 5 , VGE = + 15 V to 0 V
R
g
- 176 264
-1930
nCGate to emitter charge (turn-on) Q
- 89 134
- 0.513 0.770
- 0.402 0.603
- 0.915 1.373
- 0.930 1.395
mJ
- 0.610 0.915
- 1.540 2.310
- 2530 3790
- 344 516
pFOutput capacitance C
- 78 117
Fullsquare
10 - - μs
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94470
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 03-Aug-10
20MT120UFAPbF
"Full Bridge" IGBT MTP
Vishay Semiconductors
(Ultrafast NPT IGBT), 20 A
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IC = 20 A - 2.48 2.94
= 40 A - 3.28 3.90
I
C
= 20 A, TJ = 125 °C - 2.44 2.84
Diode forward voltage drop V
Reverse recovery energy of the diode E
Diode reverse recovery time t
Peak reverse recovery current I
FM
rec
I
C
= 40 A, TJ = 125 °C - 3.45 4.14
I
C
= 20 A, TJ = 150 °C - 2.21 2.93
I
C
VGE = 15 V, Rg = 5 , L = 200 μH
= 600 V, IC = 20 A
V
rr
rr
CC
T
= 125 °C
J
- 420 630 μJ
- 98 150 ns
-3350A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
Case to sink per module R
Clearance External shortest distance in air between 2 terminals 5.5 - -
Creepage
Mounting torque
Weight 66 g
IGBT
J
Stg
R
thJC
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
- 40 - 150
- 40 - 125
- 0.53 0.64
8--
3 ± 10 % Nm
V
°C
°C/WDiode - 0.69 0.83
mm
Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
20MT120UFAPbF
IC (A)
T
C
(°C)
40
60
80
100
120
140
160
0 5 10 15 20 25
DC
0 20406080100120140160
TC(°C)
0
50
100
150
200
250
P
t
o
t
(
W
)
1 10 100 1000 10000
V
CE
(V)
0.01
0.1
1
10
100
1000
I
C
(
A
)
10 µs
100 µs
1ms
DC
0246810
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
100
)
A
(
C
I
10
1
10 100 1000 10000
V
(V)
CE
Fig. 4 - Reverse Bias SOA
= 150 °C; VGE = 15 V
T
J
100
VGE = 18V
VGE = 15V
VGE = 12V
80
VGE = 10V
VGE = 8.0V
60
)
A
(
E
C
I
40
Fig. 2 - Power Dissipation vs. Case Temperature
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Fig. 3 - Forward SOA
T
= 25 °C; TJ 150 °C
C
20
0
0246810
V
(V)
CE
Fig. 5 - Typical IGBT Output Characteristics
T
= - 40 °C; tp = 80 μs
J
Fig. 6 - Typical IGBT Output Characteristics
T
= 25 °C; tp = 80 μs
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 03-Aug-10
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