Vishay 20ETS..FPPbF High Voltage Series Data Sheet

20ETS..FPPbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 20 A

Base

cathode

2

DESCRIPTION/FEATURES

The 20ETS..FPPbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.

Typical applications are in input rectification and these

TO-220 FULL-PAK

1

Cathode

3

Anode

products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package

PRODUCT SUMMARY

VF at 10 A < 1 V

I

FSM

V

RRM

300 A

800/1200 V

outlines.
Fully isolated package (V

= 2500 V

INS

) is UL E78996

RMS

approved

This product has been designed and qualified for industrial
level and lead (Pb)-free.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C

A

18 22 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 20 A

Range 800/1200 V

300 A

10 A, TJ = 25 °C 1.0 V

- 40 to 150 °C

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

V

, MAXIMUM

PART NUMBER

20ETS08FPPbF 800 900

20ETS12FPPbF 1200 1300

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94339 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s

F(AV)

I

FSM

TC = 51 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 300

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 442

applied 250

RRM

applied 316

RRM

A

2

A

s

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20ETS..FPPbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

FM

20 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

RRM

10.4 mΩ

0.85 V

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220 FULL-PAK (94/V0)

minimum 6.0 (5.0)

maximum 12 (10)

, T

J

Stg

DC operation 2.8

R

thJC

62

R

thJA

R

thCS

Mounting surface, smooth and greased 0.5

- 40 to 150 °C

2g

0.07 oz.

kgf · cm
(lbf · in)

20ETS08FP
20ETS12FP

mA

°C/W

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2 Revision: 04-Aug-08

Document Number: 94339

20ETS..FPPbF High Voltage Series

150

125

100

180°
120°

75

90°

Temperature (°C)

Maximum Allowable Case

60°
30°

50

25

0

84

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

125

100

20ETS.. Series

Conduction angle

20ETS.. Series

Conduction period

Input Rectifier Diode, 20 A

Ø

Power Loss (W)

Maximum Average Forward

24201612

300

250

Ø

200

Vishay High Power Products

35

30

25

20

15

10

5

0

0

Fig. 4 - Forward Power Loss Characteristics

DC
180°
120°

90°
60°
30°

RMS limit

Conduction period

20ETS.. Series
T

= 150 °C

J

5

10

Average Forward Current (A)

At any rated load condition and with
rated V
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

15 2520

applied following surge.

RRM

Ø

= 150 °C

J

75

360°

Temperature (°C)

Maximum Allowable Case

180°
120°

90°

50

60°
30°

25

0

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

30

25

20

15

10

Power Loss (W)

5

Maximum Average Forward

0

0

180°
120°

90°
60°
30°

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

RMS limit

Ø

Conduction angle

20ETS.. Series
T

= 150 °C

J

150

100

20ETS.. Series

50

3530252015105

Peak Half Sine Wave Forward Current (A)

1

Number of Equal Amplitude Half

10

100

Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

300

250

200

150

100

50

2420161284

0.01

Peak Half Sine Wave Forward Current (A)

Maximum non-repetitive surge current
versus pulse train duration.

20ETS.. Series

Pulse Train Duration (s)

Initial T
No voltage reapplied
Rated V

0.1

= 150 °C

J

reapplied

RRM

1

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94339 For technical questions, contact: [e-mail]

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Revision: 04-Aug-08 3

20ETS..FPPbF High Voltage Series

Vishay High Power Products

- Instantaneous

F

I

Forward Current (A)

10

Input Rectifier Diode, 20 A

1000

TJ = 25 °C

100

10

20ETS.. Series

1

0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

TJ = 150 °C

3.53.02.52.01.51.00.5

4.0

1

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.1

0.0001 0.001 0.01 0.1 1 10 100

Single pulse

(thermal resistance)

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

20ETS.. Series

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Document Number: 94339

4 Revision: 04-Aug-08

20ETS..FPPbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

20 E T S 12 FP PbF

1 - Current rating (20 = 20 A)

2 - Circuit configuration:

3 - Package:

T = TO-220

4 - Type of silicon:

S = Standard recovery rectifier

5 - Voltage ratings

-

FULL-PAK

6

7 -

Input Rectifier Diode, 20 A

51324

67

E = Single diode

None = Standard production

PbF = Lead (Pb)-free

Vishay High Power Products

08 = 800 V
12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95005

Part marking information http://www.vishay.com/doc?95009

Document Number: 94339 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 5

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5° ± 0.5°

3.3

3.1

5° ± 0.5°

0.9

0.7

2.54 TYP.

2.54 TYP.

10.6

10.4

3.7

3.2

7.31

6.91

0.61

0.38

2.85

2.65

2.8

2.6

1.4

1.3

10°

4.8

4.6

16.0

15.8

16.4

15.4

(2 places)

R 0.7
R 0.5

Hole Ø

3.4

3.1

TYP.

1.15

1.05

13.56

13.05

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

Conforms to JEDEC outline TO-220 FULL-PAK

DIMENSIONS in millimeters

Outline Dimensions

Vishay Semiconductors

Revision: 20-Jul-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

Document Number: 95005

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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