20ETS..FPPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
Base
cathode
2
DESCRIPTION/FEATURES
The 20ETS..FPPbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
TO-220 FULL-PAK
1
Cathode
3
Anode
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
PRODUCT SUMMARY
VF at 10 A < 1 V
I
FSM
V
RRM
300 A
800/1200 V
outlines.
Fully isolated package (V
= 2500 V
INS
) is UL E78996
RMS
approved
This product has been designed and qualified for industrial
level and lead (Pb)-free.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
18 22 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 20 A
Range 800/1200 V
300 A
10 A, TJ = 25 °C 1.0 V
- 40 to 150 °C
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
V
, MAXIMUM
PART NUMBER
20ETS08FPPbF 800 900
20ETS12FPPbF 1200 1300
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94339 For technical questions, contact: diodes-tech@vishay.com
Revision: 04-Aug-08 1
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 51 °C, 180° conduction half sine wave 20
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
2
A
s
www.vishay.com
20ETS..FPPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
FM
20 A, TJ = 25 °C 1.1 V
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 1.0
J
V
= Rated V
R
RRM
10.4 mΩ
0.85 V
0.1
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-220 FULL-PAK (94/V0)
minimum 6.0 (5.0)
maximum 12 (10)
, T
J
Stg
DC operation 2.8
R
thJC
62
R
thJA
R
thCS
Mounting surface, smooth and greased 0.5
- 40 to 150 °C
2g
0.07 oz.
kgf · cm
(lbf · in)
20ETS08FP
20ETS12FP
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 04-Aug-08
Document Number: 94339
20ETS..FPPbF High Voltage Series
150
125
100
180°
120°
75
90°
Temperature (°C)
Maximum Allowable Case
60°
30°
50
25
0
84
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
125
100
20ETS.. Series
Conduction angle
20ETS.. Series
Conduction period
Input Rectifier Diode, 20 A
Ø
Power Loss (W)
Maximum Average Forward
24201612
300
250
Ø
200
Vishay High Power Products
35
30
25
20
15
10
5
0
0
Fig. 4 - Forward Power Loss Characteristics
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
20ETS.. Series
T
= 150 °C
J
5
10
Average Forward Current (A)
At any rated load condition and with
rated V
Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
15 2520
applied following surge.
RRM
Ø
= 150 °C
J
75
360°
Temperature (°C)
Maximum Allowable Case
180°
120°
90°
50
60°
30°
25
0
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
30
25
20
15
10
Power Loss (W)
5
Maximum Average Forward
0
0
180°
120°
90°
60°
30°
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
RMS limit
Ø
Conduction angle
20ETS.. Series
T
= 150 °C
J
150
100
20ETS.. Series
50
3530252015105
Peak Half Sine Wave Forward Current (A)
1
Number of Equal Amplitude Half
10
100
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
250
200
150
100
50
2420161284
0.01
Peak Half Sine Wave Forward Current (A)
Maximum non-repetitive surge current
versus pulse train duration.
20ETS.. Series
Pulse Train Duration (s)
Initial T
No voltage reapplied
Rated V
0.1
= 150 °C
J
reapplied
RRM
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94339 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Aug-08 3