20ETF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 20ETF..SPbF soft recovery rectifier series
has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Available
RoHS*
COMPLIANT
D2PAK (SMD-220)
1
--
Anode
3
Anode
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 10 A < 1.2 V
I
FSM
V
RRM
300 A
200 to 600 V
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 20 A
200 to 600 V
300 A
10 A, TJ = 25 °C 1.2 V
1 A, 100 A/µs 60 ns
Range - 40 to 150 °C
VOLTAGE RATINGS
V
, MAXIMUM PEAK
PART NUMBER
20ETF02SPbF 200 300
20ETF06SPbF 600 700
RRM
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
520ETF04SPbF 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94097 For technical questions, contact: diodes-tech@vishay.com
Revision: 05-Jun-08 1
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4420 A2√s
F(AV)
I
FSM
TC = 97 °C, 180° conduction half sine wave 20
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
2
A
s
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20ETF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
T
, T
J
R
thJC
R
thJA
20 A, TJ = 25 °C 1.30
60 A, T
= 25 °C 1.67
J
t
12.5 mΩ
TJ = 150 °C 0.9 V
rr
Stg
TJ = 25 °C
T
= 150 °C 5.0
J
IF at 20 Apk
100 A/µs
25 °C
V
= Rated V
R
RRM
160 ns
10 A
1.25 µC
- 40 to 150 °C
DC operation 0.9
(1)
S
240 °C
0.07 oz.
2
PAK (SMD-220)
0.1
I
FM
t
rr
t
atb
dir
dt
I
RM(REC)
40
2g
20ETF02S
20ETF04S
20ETF06S
V
mA
Q
°C/W
t
rr
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94097
2 Revision: 05-Jun-08
20ETF..SPbF Soft Recovery Series
150
140
130
120
110
100
Temperature (°C)
90
Maximum Allowable Case
Maximum Allowable Case
80
70
150
140
130
120
110
100
Temperature (°C)
90
80
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Ø
Conduction angle
180°
180°
120°
90°
16 18 20
Ø
DC
35
60°
30°
28
06
4
12 14
10 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Conduction period
30°
60°
90°
120°
530
025
15
10 20
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
45
40
35
30
25
20
15
Power Loss (W)
10
Maximum Average Forward
300
250
200
150
Forward Current (A)
Peak Half Sine Wave
100
50
Vishay High Power Products
DC
180°
120°
90°
60°
30°
RMS limit
5
0
0
10 205
15
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with
rated V
20ETF.. Series
1 10 100
applied following surge.
RRM
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Ø
Conduction period
20ETF.. Series
T
= 150 °C
J
30
25
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
35
35
30
25
20
15
Power Loss (W)
10
Maximum Average Forward
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
5
0
0
10 155
20ETF.. Series
= 150 °C
T
J
20
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
25
550
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
50
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated V
20ETF.. Series
0.001 0.01 1
0.1
RRM
reapplied
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94097 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Jun-08 3